Engineering Papers⌕ Search

Engineering topics

Fu, Liang

Publications and source records attributed to Fu, Liang.

14 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Spin transport of a doped Mott insulator in moiré heterostructures

Moiré superlattices of semiconducting transition metal dichalcogenide heterobilayers are model systems for investigating strongly correlated electronic phenomena. Specifically, WSe 2 /WS 2 moiré superlattices have emerged as a quantum simulator for the two-dimensional extended Hubbard model. Experimental studies of charge transport have revealed correlated Mott insulator and generalized Wigner crystal states, but spin transport of the moiré heterostructure has not yet been sufficiently explored. Here, we use spatially and temporally resolved circular dichroism spectroscopy to directly image the spin transport as a function of carrier doping and temperature in WSe 2 /WS 2 moiré heterostructures. We observe diffusive spin transport at all hole concentrations at 11 Kelvin — including the Mott insulator at one hole per moiré unit cell — where charge transport is strongly suppressed. At elevated temperatures the spin diffusion constant remains unchanged in the Mott insulator state, but it increases significantly at finite doping away from the Mott state. The doping- and temperature-dependent spin transport can be qualitatively understood using a t–J model, where spins can move via the hopping of spin-carrying charges and via the exchange interaction.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Nodal fermions in the strongly spin-orbit coupled pyrochlore-lattice compound RbBi2

We explore the topological electronic band structure of the pyrochlore lattice in the strong spin-orbit coupling regime. Using angle-resolved photoemission spectroscopy, first-principles calculations, and symmetry analysis, we have investigated the bulk electronic structure of RbBi2, which has a Bi pyrochlore network. We observe the presence of 3D massless Dirac fermions enforced by nonsymmorphic symmetry, as well as a 3D quadratic band crossing protected by cubic crystalline symmetry. Furthermore, we identify an additional 3D linear Dirac dispersion associated with band inversion protected by threefold rotation symmetry. These observations reveal the rich band topology of itinerant pyrochlore lattice systems in the strong SOC limit and serve as a starting point to explore correlated topological phases in geometrically frustrated lattices.

Oh, Dongjin↗
DOE OSTI2024

An antiferromagnetic diode effect in even-layered MnBi 2 Te 4

In a p–n junction, the separation of positive and negative charges leads to diode transport, in which charge flows in only one direction. Non-centrosymmetric polar conductors are intrinsic diodes that could be of use in the development of nonlinear applications. Such systems have recently been extended to non-centrosymmetric superconductors, and the superconducting diode effect has been observed. Here, in this paper, we report an antiferromagnetic diode effect in a centrosymmetric crystal without directional charge separation. We observed large second-harmonic transport in a nonlinear electronic device enabled by the compensated antiferromagnetic state of even-layered MnBi 2 Te 4 . We show that this antiferromagnetic diode effect can be used to create in-plane field-effect transistors and microwave-energy-harvesting devices. We also show that electrical sum-frequency generation can be used as a tool to detect nonlinear responses in quantum materials.

electronic properties and materials↗
DOE OSTI2024

Quantum Anomalous Hall Crystal at Fractional Filling of Moiré Superlattices

We predict the emergence of a state of matter with intertwined ferromagnetism, charge order, and topology in fractionally filled moiré superlattice bands. Remarkably, these quantum anomalous Hall crystals exhibit a quantized integer Hall conductance that is different than expected from the filling and Chern number of the band. Microscopic calculations show that this phase is robustly favored at half-filling (𝜈 =1/2) at larger twist angles of the twisted semiconductor bilayer 𝑡⁢MoTe 2 .

Exact diagonalization↗
DOE OSTI2024

Revealing a distortive polar order buried in the Fermi sea

Polar metals are challenging to identify spectroscopically because the fingerprints of electric polarization are often obscured by the presence of screening charges. Here, we unravel unambiguous signatures of a distortive polar order buried in the Fermi sea by probing the nonlinear optical response of materials driven by tailored terahertz fields. We apply this strategy to investigate the topological crystalline insulator Pb 1–x Sn x Te, tracking its soft phonon mode in the time domain and observing the occurrence of inversion symmetry breaking as a function of temperature. By combining measurements across the material’s phase diagram with ab initio calculations, we demonstrate the generality of our approach. These results highlight the potential of terahertz driving fields to reveal polar orders coexisting with itinerant electrons, thus opening additional avenues for material discovery.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

Mapping twist-tuned multiband topology in bilayer WSe 2

Semiconductor moiré superlattices have been shown to host a wide array of interaction-driven ground states. However, twisted homobilayers have been difficult to study in the limit of large moiré wavelengths, where interactions are most dominant. In this study, we conducted local electronic compressibility measurements of twisted bilayer WSe 2 (tWSe 2 ) at small twist angles. We demonstrated multiple topological bands that host a series of Chern insulators at zero magnetic field near a “magic angle” around 1.23°. Using a locally applied electric field, we induced a topological quantum-phase transition at one hole per moiré unit cell. Finally, our work establishes the topological phase diagram of a generalized Kane-Mele-Hubbard model in tWSe 2 , demonstrating a tunable platform for strongly correlated topological phases.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Dual quantum spin Hall insulator by density-tuned correlations in TaIrTe 4

The convergence of topology and correlations represents a highly coveted realm in the pursuit of new quantum states of matter. Introducing electron correlations to a quantum spin Hall (QSH) insulator can lead to the emergence of a fractional topological insulator and other exotic time-reversal-symmetric topological order, not possible in quantum Hall and Chern insulator systems. Here, in this study, we report a new dual QSH insulator within the intrinsic monolayer crystal of TaIrTe 4 , arising from the interplay of its single-particle topology and density-tuned electron correlations. At charge neutrality, monolayer TaIrTe 4 demonstrates the QSH insulator, manifesting enhanced nonlocal transport and quantized helical edge conductance. After introducing electrons from charge neutrality, TaIrTe 4 shows metallic behaviour in only a small range of charge densities but quickly goes into a new insulating state, entirely unexpected on the basis of the single-particle band structure of TaIrTe 4 . This insulating state could arise from a strong electronic instability near the van Hove singularities, probably leading to a charge density wave (CDW). Remarkably, within this correlated insulating gap, we observe a resurgence of the QSH state. The observation of helical edge conduction in a CDW gap could bridge spin physics and charge orders. The discovery of a dual QSH insulator introduces a new method for creating topological flat minibands through CDW superlattices, which offer a promising platform for exploring time-reversal-symmetric fractional phases and electromagnetism.

electronic devices↗
DOE OSTI2023

Current rectification based on noncentrosymmetric quantum materials

Rectification is a process that converts electromagnetic fields into direct current (DC). Such a process underlies a wide range of technologies, including wireless communication, wireless charging, energy harvesting, and infrared detection. Existing rectifiers are mostly based on semiconductor diodes, with limited applicability to small voltages or high frequency inputs. Here, we present an alternative approach to current rectification that uses the electronic properties of quantum crystals without semiconductor junctions. We identify a new mechanism for rectification from skew scattering due to the chirality of itinerant electrons in time-reversal-invariant but inversion-breaking materials. Our calculations reveal large, tunable rectification effects in graphene multilayers and transition metal dichalcogenides. These effects can be used in high-frequency rectifiers by rational material design and quantum wavefunction engineering.

Isobe, Hiroki↗
DOE OSTI2023

Hofstadter states and re-entrant charge order in a semiconductor moiré lattice

The emergence of moiré materials with flat bands provides a platform to systematically investigate and precisely control correlated electronic phases. Here, we report local electronic compressibility measurements of a twisted WSe2/MoSe2 heterobilayer which reveal a rich phase diagram of interpenetrating Hofstadter states and electron solids. We show that this reflects the presence of both flat and dispersive moiré bands whose relative energies, and therefore occupations, are tuned by density and magnetic field. At low densities, competition between moiré bands leads to a transition from commensurate arrangements of singlets at doubly occupied sites to triplet configurations at high fields. Hofstadter states (i.e., Chern insulators) are generally favored at high densities as dispersive bands are populated, but are suppressed by an intervening region of reentrant charge-ordered states in which holes originating from multiple bands cooperatively crystallize. Our results reveal the key microscopic ingredients that favor distinct correlated ground states in semiconductor moiré systems, and they demonstrate an emergent lattice model system in which both interactions and band dispersion can be experimentally controlled.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure

Quantum geometry in condensed matter physics has two components: the real part quantum metric and the imaginary part Berry curvature. Whereas the effects of Berry curvature have been observed through phenomena such as the quantum Hall effect in 2D electron gases and the anomalous Hall effect (AHE) in ferromagnets, quantum metric has rarely been explored. Here, in this paper, we report a nonlinear Hall effect induced by quantum metric dipole by interfacing even-layered MnBi 2 Te 4 with black phosphorus. The quantum metric nonlinear Hall effect switches direction upon reversing the AFM spins and exhibits distinct scaling that is independent of the scattering time. Our results open the door to discovering quantum metric responses predicted theoretically and pave the way for applications that bridge nonlinear electronics with AFM spintronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Signatures of fractional quantum anomalous Hall states in twisted MoTe 2

The interplay between spontaneous symmetry breaking and topology can result in exotic quantum states of matter. A celebrated example is the quantum anomalous Hall (QAH) state, which exhibits an integer quantum Hall effect at zero magnetic field owing to intrinsic ferromagnetism. In the presence of strong electron–electron interactions, fractional QAH (FQAH) states at zero magnetic field can emerge. These states could host fractional excitations, including non-Abelian anyons—crucial building blocks for topological quantum computation9. Here we report experimental signatures of FQAH states in a twisted molybdenum ditelluride (MoTe 2 ) bilayer. Magnetic circular dichroism measurements reveal robust ferromagnetic states at fractionally hole-filled moiré minibands. Using trion photoluminescence as a sensor, we obtain a Landau fan diagram showing linear shifts in carrier densities corresponding to filling factor v = −2/3 and v = −3/5 ferromagnetic states with applied magnetic field. These shifts match the Streda formula dispersion of FQAH states with fractionally quantized Hall conductance of ${\sigma }_{xy}=-\,\frac{2}{3}\frac{{e}^{2}}{h}$ and ${\sigma }_{xy}=-\,\frac{3}{5}\frac{{e}^{2}}{h}$ , respectively. Moreover, the v = −1 state exhibits a dispersion corresponding to Chern number −1, consistent with the predicted QAH state. In comparison, several non-ferromagnetic states on the electron-doping side do not disperse, that is, they are trivial correlated insulators. The observed topological states can be electrically driven into topologically trivial states. Our findings provide evidence of the long-sought FQAH states, demonstrating MoTe 2 moiré superlattices as a platform for exploring fractional excitations.

Quantum Hall↗
DOE OSTI2023

Dipole ladders with large Hubbard interaction in a moiré exciton lattice

Two-dimensional semiconductor moiré superlattices have emerged as a powerful platform for engineering correlated electronic phenomena. On the other hand, optical excitation creates charge neutral interlayer excitons with an out-of-plane electric dipole. Strong onsite dipole–dipole interaction promises the formation of correlated bosonic states, akin to the Mott states of electrons, but has not yet been demonstrated. Here we report a large interaction between excitons occupying the same moiré lattice site—characterized by the Hubbard U parameter—and consequent dipole ladders with spin- and electron-filling dependence in WSe 2 /WS 2 moiré superlattices. Photoluminescence measurements show successive peaks emerging with an energy separation of around 34 meV above the ground state as the exciton density is increased. This corresponds to the sequential injection of excitons into a single site with an energy cost to overcome the large exciton Hubbard U, forming a dipole ladder. Based on findings of local magnetic moments at two holes per moiré cell, we show that excitons can also fill a second moiré orbital, establishing the two-orbital nature of the moiré potential landscape. Our results show that the Bose–Hubbard model with possible exciton crystal phases can be investigated in interacting opto-moiré quantum matter.

36 MATERIALS SCIENCE↗