Engineering topics

Franz, David

Publications and source records attributed to Franz, David.

9 records

NASA NTRS2017

Fabrication of Ultrasensitive Transition Edge Sensor Bolometric Detectors for HIRMES

The high resolution mid-infrared spectrometer (HIRMES) is a high resolving power (R approx. 100,000) instrument operating in the 25-122 micron spectral range and will fly on board the Stratospheric Observatory for Far-Infrared Astronomy (SOFIA) in 2019. Central ot HIRMES are its two transition edge sensor (TES) bolometric cameras, an 8x16 detector high resolution array and a 64x16 detector low resolution array. Both types of detectors consist of MoAu TES fabricated on leg-isolated Si membranes. Whereas the high resolution detectors, with noise equivalent power (NEP) approx. 2 aW/square root of (Hz), are fabricated on 0.45 micron Si substrates, the low resolution detectors, with NEP approx. 10 aW/square root of (Hz), are fabricated on 1.40 micron Si. Here we discuss the similarities and difference in the fabrication methodologies used to realize the two types of detectors.

Detectors↗

NASA NTRS2017

A Path to High Efficiency Optical Coupling for HIRMES

The high-resolution mid-infrared spectrometer (HIRMES) under development for SOFIA (Stratospheric Observatory for Infrared Astronomy) is an instrument operating in the 25-122 μm spectral range with a spectral resolution R= Δ ʎ /ʎ ~100,000 and has two absorber-coupled transition edge sensor (TES) bolometric detector focal planes. We have developed novel NbTiN low stress absorber coatings which have the required optical impedance across the HIRMES operating band. The low intrinsic stress of these coatings allow for a peak-to-valley corrugation amplitude < 5 μm of the 450 nm thick, 1.4 mm x 1.7 mm detector pixels. Furthermore, these coatings have a superconducting transition temperature ~ 10 K, which allows them to simultaneously serve as an absorber in the desired signal band and a rejection filter at long wavelengths. This attribute makes them especially attractive for ultrasensitive absorber-coupled bolometric detector applications, because it helps in controlling the optical loading from out-of band radiation. We also discuss a novel method for integrating a wedged reflective absorber-termination to the detector array.

bolometers↗

NASA NTRS2012

Large-Area Vacuum Ultraviolet Sensors

Pt/(n-doped GaN) Schottky-barrier diodes having active areas as large as 1 cm square have been designed and fabricated as prototypes of photodetectors for the vacuum ultraviolet portion (wavelengths approximately equal 200 nm) of the solar spectrum. In addition to having adequate sensitivity to photons in this wavelength range, these photodetectors are required to be insensitive to visible and infrared components of sunlight and to have relatively low levels of dark current.

Aslam, Shahid↗

NASA NTRS2010

Large-Format AlGaN PIN Photodiode Arrays for UV Images

A large-format hybridized AlGaN photodiode array with an adjustable bandwidth features stray-light control, ultralow dark-current noise to reduce cooling requirements, and much higher radiation tolerance than previous technologies. This technology reduces the size, mass, power, and cost of future ultraviolet (UV) detection instruments by using lightweight, low-voltage AlGaN detectors in a hybrid detector/multiplexer configuration. The solar-blind feature eliminates the need for additional visible light rejection and reduces the sensitivity of the system to stray light that can contaminate observations.

Aslam, Shahid↗

NASA NTRS2010

AlGaN Ultraviolet Detectors for Dual-Band UV Detection

This innovation comprises technology that has the ability to measure at least two ultraviolet (UV) bands using one detector without relying on any external optical filters. This allows users to build a miniature UVA and UVB monitor, as well as to develop compact, multicolor imaging technologies for flame temperature sensing, air-quality control, and terrestrial/counter-camouflage/biosensing applications.

Miko, Laddawan↗

NASA NTRS2008

Schottky barrier diode and method thereof

Pt/n.sup.-GaN Schottky barrier diodes are disclosed that are particularly suited to serve as ultra-violet sensors operating at wavelengths below 200 nm. The Pt/n.sup.-GaN Schottky barrier diodes have very large active areas, up to 1 cm.sup.2, which exhibit extremely low leakage current at low reverse biases. Very large area Pt/n.sup.-GaN Schottky diodes of sizes 0.25 cm.sup.2 and 1 cm.sup.2 have been fabricated from n.sup.-/n.sup.+ GaN epitaxial layers grown by vapor phase epitaxy on single crystal c-plane sapphire, which showed leakage currents of 14 pA and 2.7 nA, respectively for the 0.25 cm.sup.2 and 1 cm.sup.2 diodes both configured at a 0.5V reverse bias.

Aslam, Shahid↗

NASA NTRS2007

A Microshutter-Based Field Selector for JWST's Near Infared Spectrograph

One of the James Webb Space Telescope's (JWST) primary science goals is to characterize the epoch of galaxy formation in the universe and observe the first galaxies and clusters of galaxies. This goal requires multi-band imaging and spectroscopic data in the near infrared portion of the spectrum for large numbers of very faint galaxies. Because such objects are sparse on the sky at the JWST resolution, a multi-object spectrograph is necessary to efficiently carry out the required observations. We have developed a fully programmable microshutter array that will be used as the field selector for the Near Infrared Spectrograph (NIRSpec) on JWST. This device allows slits to be opened at the locations of selected galaxies in the field of view while blocking other unwanted light from the sky background and bright sources. In practice, greater than 100 objects within the field of view will be observed simultaneously. In this paper, we describe the microshutter arrays, their development, fabrication, testing, and progress toward delivery of flight qualified devices to the NIRSpec instrument team in 2008.

Silvergerg, Rorbert F.↗

NASA NTRS2007

Bias Selectable Dual Band AlGaN Ultra-violet Detectors

Bias selectable dual band AlGaN ultra-violet (UV) detectors, which can separate UV-A and UV-B using one detector in the same pixel by bias switching, have been designed, fabricated and characterized. A two-terminal n-p-n photo-transistor-like structure was used. When a forward bias is applied between the top electrode and the bottom electrode, the detectors can successfully detect W-A and reject UV-B. Under reverse bias, they can detect UV-B and reject UV-A. The proof of concept design shows that it is feasible to fabricate high performance dual-band UV detectors based on the current AlGaN material growth and fabrication technologies.

Yan, Feng↗

NASA NTRS2004

4H-SiC UV Photo Detector with Large Area and Very High Specific Detectivity

Pt/4H-SiC Schottky photodiodes have been fabricated with the device areas up to 1 sq cm. The I-V characteristics and photo-response spectra have been measured and analyzed. For a 5 mm x 5 mm area device leakage current of 1 x 10(exp 15)A at zero bias and 1.2 x 10(exp 14)A at -IV have been established. The quantum efficiency is over 30% from 240nm to 320nm. The specific detectivity, D(sup *), has been calculated from the directly measured leakage current and quantum efficiency data and are shown to be higher than 10(exp 15) cmHz(sup 1/2)/W from 210nm to 350nm with a peak D(sup *) of 3.6 x 10(exp 15)cmH(sup 1/2)/W at 300nm.

Yan, Feng↗