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Fossum, J. G.

Publications and source records attributed to Fossum, J. G..

10 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Improved High/Low Junction Silicon Solar Cell

Method developed to raise value of open-circuit voltage in silicon solar cells by incorporating high/low junction in cell emitter. Power-conversion efficiency of low-resistivity silicon solar cell considerably less than maximum theoretical value mainly because open-circuit voltage is smaller than simple p/n junction theory predicts. With this method, air-mass-zero opencircuit voltage increased from 600 mV level to approximately 650 mV.

Neugroschel, A.↗
NASA NTRS1986

Improved High/Low Junction Silicon Solar Cell

Air-mass-zero open-circuit voltage increased to 650 mV. Oxide-chargeinduced high/low emitter solar cell, electron accumulation layer induced by positive charge. High/low emitter suppresses dark emitter recombination current, resulting in power-conversion efficiencies significantly higher than previously achieved.

Neugroschel, A.↗
NASA NTRS1980

Review of physics underlying recent improvements in silicon solar-cell performance

This paper provides a unifying view of the physics of silicon solar cells, and uses it as a basis for explaining how recent improvements in the performance of these cells have been achieved. The unification is facilitated by a region-by-region analysis of the solar cell, which is also used to compare several recently proposed cell structures.

Lindholm, F. A.↗
NASA NTRS1979

The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cells

Experimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.

Fossum, J. G.↗
NASA NTRS1979

Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors

A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.

Shibib, M. A.↗
NASA NTRS1979

Application of the superposition principle to solar-cell analysis

The superposition principle of differential-equation theory - which applies if and only if the relevant boundary-value problems are linear - is used to derive the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Analytical methods are presented to treat cases where shifting is not strictly valid. Well-defined conditions necessary for superposition to apply are established. For high injection in the base region, the method of analysis accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level).

Lindholm, F. A.↗
NASA NTRS1978

Design considerations for silicon HLE solar cells

The high-low (H-L) junction in the emitter region that defines the high-low-junction emitter (HLE) solar cell suppresses the dark emitter recombination current J sub E so that the base recombination current dominates in determining the open-circuit voltage. For silicon cells this enables the achievement of considerably larger values of open-circuit voltage than those achievable in conventional structures. This paper describes experiments that demonstrate the achievement of J sub E suppression (to less than 5 x 10 to the -14th A/sq cm) and large open-circuit voltage (640 mV) in HLE test cells of two distinct types. In the first type (the diffused HLE structure) impurity diffusion forms the H-L junction in the emitter; in the second type (the oxide-charge-induced HLE structure) the H-L junction is formed in emitter material of relatively low doping concentration by an oxide-charge-induced electron accumulation layer.

Lindholm, F. A.↗
NASA NTRS1976

Basic corrections to predictions of solar cell performance required by nonlinearities

The superposition principle is used to derive the approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. The derivation requires the linearity of the boundary value problems that underlie the electrical characteristics. The shifting approximation is invalid if considerable photocurrent and considerable dark current both occur within the junction space-charge region; it is invalid also if sizable series resistance is present or if high-injection concentrations of holes and electrons exist within the quasi-neutral regions.

Lindholm, F. A.↗