Engineering topics
Publications and source records attributed to Forouhar, Siamak.
Double heterostructures of InGaAsSb/AlGaAsSb quaternary alloys on (100) GaSb substrates were grown by the liquid phase epitaxy (LPE) technique. Room temperature operation near 2.1 micron wavelength has been achieved under pulsed conditions with pulsed threshold current density of 7kA/sq cm.
Broad-area lasers are fabricated with a long (80-100 microns), nonabsorbing window at each end. The window is shown to dramatically improve the spatial mode properties, stabilizing and smoothing the near field, and reducing the far field from 5-15 deg to as low as 2 deg. This improvement comes at the expense of an increase in threshold current and a reduction of quantum efficiency.