Engineering topics

Forbes, David

Publications and source records attributed to Forbes, David.

4 records

DOE OSTI2024

Self-Assembling Microgrids for Resilient Distribution Systems of the Future: Implementation in a Commercial DERMS Platform

Microgrids have long provided resilience to critical facilities such as hospitals and military installations, and they are now increasingly being looked at as a building block for future grids to support the energy resilience needs of the grid of the future. State-of-the-art technologies, such as blackstart algorithms using renewable distributed energy resources (DERs) to effectively and seamlessly form microgrids, have been produced by national labs over the years. Their adoption by the utility industry would be critical to reap the most benefits toward energy and climate resilience, and the pathway is via commercialization of these self-assembling microgrid algorithms by integrating them in a commercial product platform. This project brings a national labs team (LLNL, LANL) together with a vendor (Smarter Grid Solutions) to perform proof-of-concept integration of the algorithms into the vendor’s commercial Distributed Energy Resources Management System (DERMS). The project provides a strong pathway to commercialization of the algorithms thereby promoting adoption of resilient microgrid technology by utilities to offer resilience benefits to all customers and especially to disadvantaged and underserved communities.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2020

materialsCloudCompute

materialsCloudCompute (mCC) is a software package for running easily parallelizable materials science theoretical computations on Amazon Web Services (AWS) infrastructure. mCC provides tools to partition out computational problem into smaller subproblems which can be run in parallel, and ensure that each of those subproblems completes successfully. It utilizes the following AWS services: EC2, S3, and RDS. It operates by launch a managing EC2 instance, which can launch worker instances that perform the calculations. The Managing instance tracks the subproblems and ensures that the Worker instances continue to operation, killing and relaunching them if they fail.

Forbes, David↗

NASA NTRS2015

Nanowire Photovoltaic Devices

Firefly Technologies, in collaboration with the Rochester Institute of Technology and the University of Wisconsin-Madison, developed synthesis methods for highly strained nanowires. Two synthesis routes resulted in successful nanowire epitaxy: direct nucleation and growth on the substrate and a novel selective-epitaxy route based on nanolithography using diblock copolymers. The indium-arsenide (InAs) nanowires are implemented in situ within the epitaxy environment-a significant innovation relative to conventional semiconductor nanowire generation using ex situ gold nanoparticles. The introduction of these nanoscale features may enable an intermediate band solar cell while simultaneously increasing the effective absorption volume that can otherwise limit short-circuit current generated by thin quantized layers. The use of nanowires for photovoltaics decouples the absorption process from the current extraction process by virtue of the high aspect ratio. While no functional solar cells resulted from this effort, considerable fundamental understanding of the nanowire epitaxy kinetics and nanopatterning process was developed. This approach could, in principle, be an enabling technology for heterointegration of dissimilar materials. The technology also is applicable to virtual substrates. Incorporating nanowires onto a recrystallized germanium/metal foil substrate would potentially solve the problem of grain boundary shunting of generated carriers by restricting the cross-sectional area of the nanowire (tens of nanometers in diameter) to sizes smaller than the recrystallized grains (0.5 to 1 micron(exp 2).

Forbes, David↗

NASA NTRS2007

Development of a Quantum Dot, 0.6 eV InGaAs Thermophotovoltaic (TPV) Converter

Thermophotovoltaic (TPV) power conversion has to date demonstrated conversion efficiencies exceeding 20% when coupled to a heat source. Current III-V semiconductor TPV technology makes use of planar devices with bandgaps tailored to the heat source. The efficiency can be improved further by increasing the collection efficiency through the incorporation of InAs quantum dots. The use of these dots can provide sub-gap absorption and thus improve the cell short circuit current without the normal increase in dark current associated with lowering the bandgap. We have developed self-assembled InAs quantum dots using the Stranski-Krastanov growth mode on 0.74 eV In0.53GaAs lattice-matched to InP and also on lattice-mismatched 0.6 eV In0.69GaAs grown on InP through the use of a compositionally graded InPAsx buffer structure, by metalorganic vapor phase epitaxy (MOVPE). Atomic force microscopy (AFM) measurements showed that the most reproducible dot pattern was obtained with 5 monolayers of InAs grown at 450 C. The lattice mismatch between InAs and In0.69GaAs is only 2.1%, compared to 3.2% between InAs and In0.53GaAs. The smaller mismatch results in lower strain, making dot formation somewhat more complicated, resulting in quantum dashes, rather than well defined quantum dots in the lattice-mismatched case. We have fabricated 0.6 eV InGaAs planer TPV cells with and without the quantum dashes

Forbes, David↗