Diffuse electron scattering reveals kinetic frustration as origin of order in CoCrNi medium entropy alloy
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Materials Science↗
Engineering topics
Foley, Daniel
Publications and source records attributed to Foley, Daniel.
Evaluation of Flaw Detection with SLDV Methods Before/After Mechanical Patch
This report provides a summary of the testing and the experiments to evaluate the utility of laser ultrasonic testing (UT) in detecting and characterizing defects on the surface of steel plates before and after the application of an engineered composite patch for crack repair. Included are the detection and characterization of defects from a section of welded plate material taken from the Sandia National Laboratories’ full-size mockup of a spent nuclear fuel (SNF) dry storage canister which had been pre-flawed and exposed to deliquescent sea salt conditions for 2 years. The information includes a review of previously reported metallurgical characterization, and new work on detailed surface characterization of the corrosion attack using laser UT.
36 MATERIALS SCIENCE↗
Structural transition and recovery of Ge implanted β -Ga 2 O 3
Ion implantation-induced effects were studied in Ge implanted β-Ga 2 O 3 with the fluence and energy of 3 × 10 13 cm -2 /60 keV, 5 × 10 13 cm -2 /100 keV, and 7 × 10 13 cm -2 /200 keV using analytical electron microscopy via scanning/transmission electron microscopy, electron energy loss spectroscopy, and precession electron diffraction via TopSpin. Imaging shows an isolated band of damage after Ge implantation, which extends ~130 nm from the sample surface and corresponds to the projected range of the ions. Electron diffraction demonstrates that the entirety of the damage band is the κ phase, indicating an implantation-induced phase transition from β to κ-Ga 2 O 3 . Post-implantation annealing at 1150 °C for 60 s under the O 2 atmosphere led to a back transformation of κ to β; however, an ~17 nm damage zone remained at the sample surface. Despite the back transformation from κ to β with annealing, O K-edge spectra show changes in the fine structure between the pristine, implanted, and implanted-annealed samples, and topspin strain analysis shows a change in strain between the two samples. These data indicate differences in the electronic/chemical structure, where the change of the oxygen environment extended beyond the implantation zone (~130 nm) due to the diffusion of Ge into the bulk material, which, in turn, causes a tensile strain of 0.5%. This work provides a foundation for understanding of the effects of ion implantation on defect/phase evolution in β-Ga 2 O 3 and the related recovery mechanism, opening a window toward building a reliable device for targeted applications.
36 MATERIALS SCIENCE↗