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Flicker, Jack

Publications and source records attributed to Flicker, Jack.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Modular Control Architecture for Scalable, Resilient, and Cybersecure Microgrids Test Results [Mojave firmware 1.09 FW valuation]

This quick note outlines what we found after our conversion with you and your team. As suggested, we loaded 1547-2003 source requirements document (SRD) and then went back and loaded 1547-2018 SRD. This did result in implementing the new 1547-2018 settings. This short report focuses on the frequency-watt function and shows a couple of screen shots of the parameter settings via the Mojave HMI interface and plots of the results of the inverter with FW function enabled in both default and most aggressive settings response to frequency events. The first screen shot shows the 1547-2018 selected after selecting 1547-2003.

42 ENGINEERING↗
DOE OSTI2022

Analysis of the dependence of critical electric field on semiconductor bandgap

Abstract Understanding of semiconductor breakdown under high electric fields is an important aspect of materials’ properties, particularly for the design of power devices. For decades, a power-law has been used to describe the dependence of material-specific critical electrical field ( $${\mathcal{E}}_{\text{crit}}$$ E crit ) at which the material breaks down and bandgap ( E g ) . The relationship is often used to gauge tradeoffs of emerging materials whose properties haven’t yet been determined. Unfortunately, the reported dependencies of $${\mathcal{E}}_{\text{crit}}$$ E crit on E g cover a surprisingly wide range in the literature. Moreover, $${\mathcal{E}}_{\text{crit}}$$ E crit is a function of material doping. Further, discrepancies arise in $${\mathcal{E}}_{\text{crit}}$$ E crit values owing to differences between punch-through and non-punch-through device structures. We report a new normalization procedure that enables comparison of critical electric field values across materials, doping, and different device types. An extensive examination of numerous references reveals that the dependence $${\mathcal{E}}_{\text{crit}}$$ E crit ∝ E g 1.83 best fits the most reliable and newest data for both direct and indirect semiconductors. Graphical abstract

36 MATERIALS SCIENCE↗