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Fiegl, G.

Publications and source records attributed to Fiegl, G..

Two-Crucible Czochralski Process

Scheme for continuous melt replenishment increases capacity of Czochralski crystal-growing furnace. Replenishing and drawing crucibles of improved Czochralski apparatus connected by heated quartz siphon. When doped silicon added to replenishing crucible, liquid silicon flows into drawing crucible, equalizing two melt levels. Addition of new material automatically controlled in response to optically sensed melt level. Results of this semicontinuous operation higher production speed, lower cost, and good control of crystal quality.

Fiegl, G.

Conduit for Transferring Molten Silicon

Proposed three-part conduit transfers pure silicon between crucibles. Four-strip heater augments layers of insulation to prevent molten silicon from cooling and solidifying during transfer. Since melt is maintained at temperature relatively close to fusion point, to minimize quartz erosion, even relatively-minor heat losses precipitate solidification and terminate work in progress. Several crucibles may be fed through conduits from central crucible. Each would be contained in its own compartment under inert atmosphere.

Fiegl, G.

Economics of ingot slicing with an internal diameter saw for low-cost solar cells

Slicing of silicon ingots using diamond impregnated internal diameter blade saws has been a standard technology of the semiconductor industry. This paper describes work on improvements to this technology for 10 cm diameter ingot slicing. Ingot rotation, dynamic blade edge control with feedback, mechanized blade dressing and development of thinner blades are the approaches tried. A comparison of the results for wafering with and without ingot rotation is also made. A sensitivity analysis of the major cost elements in wafering is performed for 10 cm diameter ingot and extended to the 15 cm diameter ingot case. Various parameter values such as machine cost, feed rate and consumable materials cost are identified both for single and multiple ingot slicing.

Daud, T.

LSA Large Area Silicon Sheet Task. Continuous Liquid Feed Czochralski Growth

The design and development of equipment and processes to demonstrate continuous growth of crystals by the Czochralski method suitable for producing single silicon crystals for use in solar cells is presented. The growth of at least 150 kg of mono silicon crystal, 150 mm in diameter is continuous from one growth container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a meltdown system with a continuous solid silicon feed mechanism and a liquid transfer system, with associated automatic feedback controls is discussed. Due to the silicon monoxide build up in the furnace and its retarding effect on crystal growth the furnace conversion for operation in the low pressure range is described. Development of systems for continuous solid recharging of the meltdown chamber for various forms of poly silicon is described.

Fiegl, G.

LSA Large Area Silicon Sheet Task Continuous Liquid Feed Czochralski Growth

A process for the continuous growth of crystals by the Czochralski method, suitable for producing single silicon crystals for use in solar cells was studied. Continuous growth is the growth of 100 Kg of single silicon crystals, 10 cm in diameter, from one container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a melt-down system and a liquid transfer mechanism, with associated automatic feedback controls was developed. Elements of the transfer system were further developed and tested during actual transfer runs. Considerable simplification of the heating element of the transfer tube was achieved. Accuracy and reliability of the temperature sensor, which is part of the power input control system for the transfer tube, was improved. Electrical and thermal effectiveness were increased while assembly of the transfer tube system was further simplified.

Fiegl, G.