Engineering topics

Fahad, Hossain M.

Publications and source records attributed to Fahad, Hossain M..

4 records

DOE OSTI2020

Improved Hydrogen Sensitivity and Selectivity in PdO with Metal-Organic Framework Membrane

Metal-organic frameworks (MOFs) are highly designable porous materials and are recognized for their exceptional selectivity as chemical sensors. However, they are not always suitable for incorporation with existing sensing platforms, especially sensing modes that rely on electronic changes in the sensing material (e.g., work-function response or conductometric response). One way that MOFs can be utilized is by growing them as a porous membrane on a sensing layer and using the MOF to affect the electronic structure of the sensing layer. In this paper, a proof-of-concept for electronic modulation with MOFs is demonstrated. A PdO nanoparticle sensing layer on a chemical-sensitive field-effect-transistor is made more sensitive to a reducing gas, hydrogen, and less sensitive to oxidizng molecules, like H 2 S and NO 2 , by growing a layer of the MOF “ZIF-8” over the nanoparticles. The proposed mechanism is supported by X-ray photoelectron spectroscopy showing that the ZIF-8 membrane partially reduces the PdO sensing layer.

Gardner, David W. (ORCID:0000000193518391)↗

DOE OSTI2020

Trace-Level, Multi-Gas Detection for Food Quality Assessment Based on Decorated Silicon Transistor Arrays

Multiplexed gas detection at room temperature is critical for practical applications, such as for tracking the complex chemical environments associated with food decomposition and spoilage. Here, an integrated array of multiple silicon-based, chemical-sensitive field effect transistors (CSFETs) is presented to realize selective, sensitive, and simultaneous measurement of gases typically associated with food spoilage. CSFETs decorated with sensing materials based on ruthenium, silver, and silicon oxide are used to obtain stable room-temperature responses to ammonia (NH 3 ), hydrogen sulfide (H 2 S), and humidity, respectively. For example, one multi-CSFET sensor signal changes from its baseline by 13.34 in response to 1 ppm of NH 3 , 724.45 under 1 ppm H 2 S, and 23.46 under 80% relative humidity, with sensitive detection down to 10 ppb of NH 3 and H 2 S. To demonstrate this sensor for practical applications, the CSFET sensor array is combined with a custom-printed circuit board into a compact, fully integrated, and portable system to conduct real-time monitoring of gases generated by decomposing food. By using existing silicon-based manufacturing methodologies, this room-temperature gas sensing array can be fabricated reproducibly and at low cost, making it an attractive platform for ambient gas measurement needed in food safety applications.

36 MATERIALS SCIENCE↗

DOE OSTI2019

Transistor-Based Work-Function Measurement of Metal–Organic Frameworks for Ultra-Low-Power, Rationally Designed Chemical Sensors

A classic challenge in chemical sensing is selectivity. Metal–organic frameworks (MOFs) are an exciting class of materials because they can be tuned for selective chemical adsorption. Adsorption events trigger work-function shifts, which can be detected with a chemical-sensitive field-effect transistor (power ≈microwatts). Here, several case studies were used towards generalizing the sensing mechanism, ultimately towards our metal-centric hypothesis. HKUST-1 was used as a proof-of-principle humidity sensor. The response is thickness independent, meaning the response is surface localized. ZIF-8 is demonstrated to be an NO 2 -sensing material, and the response is dominated by adsorption at metal sites. Finally, MFM-300(In) shows how standard hard–soft acid–base theory can be used to qualitatively predict sensor responses. This paper sets the groundwork for using the tunability of metal–organic frameworks for chemical sensing with distributed, scalable devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2019

Gate Quantum Capacitance Effects in Nanoscale Transistors

As the physical dimensions of a transistor gate continue to shrink to a few atoms, performance can be increasingly determined by the limited electronic density of states (DOS) in the gate and the gate quantum capacitance (C Q ). We demonstrate the impact of gate C Q and the dimensionality of the gate electrode on the performance of nanoscale transistors through analytical electrostatics modeling. For low-dimensional gates, the gate charge can limit the channel charge, and the transfer characteristics of the device become dependent on the gate DOS. Here, we experimentally observe for the first time, room-temperature gate quantization features in the transfer characteristics of single-walled carbon nanotube (CNT)-gated ultrathin silicon-on-insulator (SOI) channel transistors; features which can be attributed to the Van Hove singularities in the one-dimensional DOS of the CNT gate. In addition to being an important aspect of future transistor design, potential applications of this phenomenon include multilevel transistors with suitable transfer characteristics obtained via engineered gate DOS.

77 NANOSCIENCE AND NANOTECHNOLOGY↗