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Esteves, Giovanni

Publications and source records attributed to Esteves, Giovanni.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Vertical and Lateral Etch Survey of Ferroelectric AlN/Al 1-x Sc x N in Aqueous KOH Solutions

Due to their favorable electromechanical properties, such as high sound velocity, low dielectric permittivity and high electromechanical coupling, Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al 1-x Sc x N) thin films have achieved widespread application in radio frequency (RF) acoustic devices. The resistance to etching at high scandium alloying, however, has inhibited the realization of devices able to exploit the highest electromechanical coupling coefficients. In this work, we investigated the vertical and lateral etch rates of sputtered AlN and Al 1-x Sc x N with Sc concentration x ranging from 0 to 0.42 in aqueous potassium hydroxide (KOH). Etch rates and the sidewall angles were reported at different temperatures and KOH concentrations. We found that the trends of the etch rate were unanimous: while the vertical etch rate decreases with increasing Sc alloying, the lateral etch rate exhibits a V-shaped transition with a minimum etch rate at x = 0.125. By performing an etch on an 800 nm thick Al 0.875 Sc 0.125 N film with 10 wt% KOH at 65 °C for 20 min, a vertical sidewall was formed by exploiting the ratio of the {$10\overline{11}$ planes and {$1\overline{1}00$ planes etch rates. This method does not require preliminary processing and is potentially beneficial for the fabrication of lamb wave resonators (LWRs) or other microelectromechanical systems (MEMS) structures, laser mirrors and Ultraviolet Light-Emitting Diodes (UV-LEDs). It was demonstrated that the sidewall angle tracks the trajectory that follows the {$\overline{1}2\overline{12}$ of the hexagonal crystal structure when different c/a ratios were considered for elevated Sc alloying levels, which may be used as a convenient tool for structure/composition analysis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Formation of Al 3 Sc in Al 0.8 Sc 0.2 thin films

We report the formation of Al 3 Sc, in 100 nm Al 0.8 Sc 0.2 films, is found to be driven by exposure to high temperature through higher deposition temperature or annealing. High film resistivity was observed in films with lower deposition temperature that exhibited a lack of crystallinity, which is anticipated to cause more electron scattering. An increase in deposition temperature allows for the nucleation and growth of crystalline Al 3 Sc regions that were verified by electron diffraction. The increase in crystallinity reduces electron scattering, which results in lower film resistivity. Annealing Al 0.8 Sc 0.2 films at 600 °C in an Ar vacuum environment also allows for the formation and recrystallization of Al 3 Sc and Al and yields saturated resistivity values between 9.58 and 10.5 μΩ-cm regardless of sputter conditions. Al 3 Sc was found to nucleate and grow in a random orientation when deposited on SiO 2 , and highly {111} textured when deposited on 100 nm Ti and AlN films that were used as template layers. The rocking curve of the Al 3 Sc 111 reflection for the as-deposited films on Ti and AlN at 450 °C was 1.79° and 1.68°, respectively. Annealing the film deposited on the AlN template reduced the rocking curve substantially to 1.01° due to recrystallization of Al 3 Sc and Al within the film.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Stabilization of ferroelectric phase of Hf 0.6 Zr 0.4 O 2 on NbN and Nb [slides]

This work demonstrated both NbN and Nb make good electrodes for stabilizing orthorhombic phase of Hf 0.6 Zr 0.4 O 2 ferroelectric films. Wake up are < 100 cycles. P r can be as high as 30 µC/cm 2 - respectively 14 and 18 µC/cm 2 here. Further, capacitance suggests an orthorhombic phase can be stabilized. Addition of a linear dielectric under modest thickness can tune the P r and reduce leakage.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Wake-up and fatigue mechanisms in ferroelectric Hf 0.5 Zr 0.5 O 2 films with symmetric RuO 2 electrodes

In this work, the mechanisms leading to wake-up and fatigue in ferroelectric hafnium zirconium oxide thin film devices with symmetric RuO 2 electrodes are investigated via polarization, relative permittivity, dielectric nonlinearity, pyroelectric coefficient, and microfocus X-ray diffraction (XRD) measurements. The devices are observed to wake-up for up to 10 3 bipolar pulsed field cycles, after which fatigue occurs with the polarization approaching zero following 10 8 cycles. Wake-up is accompanied by a decrease in both high-field permittivity and hysteresis loop pinching and an increase in pyroelectric coefficient, indicating that the wake-up process involves a combination of transformations from the tetragonal to the orthorhombic phase and domain depinning from defect redistribution. Fatigue is observed to coincide with an increase in irreversible domain wall motion and a decrease in pyroelectric coefficient. Finite pyroelectric coefficients are measured on fully fatigued devices, indicating that domain pinning is a strong contributor to fatigue and that fatigued devices contain domain structures that are unable to switch under the fields applied for measurement. Microfocus XRD patterns measured on each device reveal that the phase constitution is qualitatively unaffected by the field cycling and resultant polarization fatigue. This data indicates that the wake-up process has contributions from both phase transformations and domain depinning, whereas the fatigue process is driven primarily by domain pinning, and the near-zero measured switchable polarization is actually a poled device with immobile domains. These observations provide insight into the physical changes occurring during field cycling of HfO 2 -based ferroelectrics while examining a possible oxide electrode material for silicon CMOS device implementation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

In this study, the Raman biaxial stress coefficients K II and strain-free phonon frequencies ω 0 have been determined for the E 2 (low), E 2 (high), and A 1 (LO) phonon modes of aluminum nitride, AlN, using both experimental and theoretical approaches. The E 2 (high) mode of AlN is recommended for the residual stress analysis of AlN due to its high sensitivity and the largest signal-to-noise ratio among the studied modes. The E 2 (high) Raman biaxial stress coefficient of ₋3.8 cm₋1/GPa and strain-free phonon frequency of 656.68 cm ₋1 were then applied to perform both macroscopic and microscopic stress mappings. For macroscopic stress evaluation, the spatial variation of residual stress was measured across an AlN-on-Si wafer prepared by sputter deposition. A cross-wafer variation in residual stress of ~150 MPa was observed regardless of the average stress state of the film. Microscopic stress evaluation was performed on AlN piezoelectric micromachined ultrasonic transducers (pMUTs) with submicrometer spatial resolution. These measurements were used to assess the effect of device fabrication on residual stress distribution in an individual pMUT and the effect of residual stress on the resonance frequency. At ~20 μm directly outside the outer edge of the pMUT electrode, a large lateral spatial variation in residual stress of ~100 MPa was measured, highlighting the impact of metallization structures on residual stress in the AlN film.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Al 0.68 Sc 0.32 N Lamb wave resonators with electromechanical coupling coefficients near 10.28%

Aluminum scandium nitride (Al 1-x Sc x N/AlScN) (x = 0.32) Lamb wave resonators (LWR) have been fabricated and tested to demonstrate electromechanical coupling coefficients (k t 2 ) in excess of 10%. The resonators exhibited an average k t 2 and unloaded quality factor (Q u ) of 10.28% and 711, respectively, when calculated from the measured data. Applying the Butterworth Van-Dyke (BVD) model to the measured data enabled the extraction of the resonator's lumped element parameters to calculate the motional quality factor (Q m ), which neglects the contributions of the electrical traces. For the best measured resonator response, results from the BVD model showed a Q m of 1184 and a resulting figure-of-merit (FOM = K 2 ·Q m ) of 100. Comparing the response of similar AlScN and AlN resonators shows that the AlScN LWR has a significantly lower motional resistance (R m ), suggesting that AlScN has a strong potential for use in piezoelectric microelectromechanical oscillators.

42 ENGINEERING↗
DOE OSTI2021

Metal Nitride Electrode Stress and Chemistry Effects on Phase and Polarization Response in Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films

Ferroelectric phase stability in hafnium oxide is reported to be influenced by factors that include composition, biaxial stress, crystallite size, and oxygen vacancies. In the present work, the ferroelectric performance of atomic layer deposited Hf 0.5 Zr 0.5 O 2 (HZO) prepared between TaN electrodes that are processed under conditions to induce variable biaxial stresses is evaluated. The post-processing stress states of the HZO films reveal no dependence on the as-deposited stress of the adjacent TaN electrodes. All HZO films maintain tensile biaxial stress following processing, the magnitude of which is not observed to strongly influence the polarization response. Subsequent composition measurements of stress-varied TaN electrodes reveal changes in stoichiometry related to the different preparation conditions. HZO films in contact with Ta-rich TaN electrodes exhibit higher remanent polarizations and increased ferroelectric phase fractions compared to those in contact with N-rich TaN electrodes. HZO films in contact with Ta-rich TaN electrodes also have higher oxygen vacancy concentrations, indicating that a chemical interaction between the TaN and HZO layers ultimately impacts the ferroelectric orthorhombic phase stability and polarization performance. The results of this work demonstrate a necessity to carefully consider the role of electrode processing and chemistry on performance of ferroelectric hafnia films.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Compositional and phase dependence of elastic modulus of crystalline and amorphous Hf 1- x Zr x O 2 thin films

The elastic moduli of amorphous and crystalline atomic layer-deposited Hf 1-x Zr x O 2 (HZO, x = 0, 0.31, 0.46, 0.79, 1) films prepared with TaN electrodes on silicon substrates were investigated using picosecond acoustic measurements. The moduli of the amorphous films were observed to increase between 211 ± 6 GPa for pure HfO 2 and 302 ± 9 GPa for pure ZrO 2 . In the crystalline films, it was found that the moduli increased upon increasing the zirconium composition from 248 ± 6 GPa for monoclinic HfO 2 to 267 ± 9 GPa for tetragonal ZrO 2 . Positive deviations from this increase were observed for the Hf 0.69 Zr 0.31 O 2 and Hf 0.54 Zr 0.46 O 2 compositions, which were measured to have moduli of 264 ± 8 GPa and 274 ± 8 GPa, respectively. These two compositions contained the largest fractions of the ferroelectric orthorhombic phase, as assessed from polarization and diffraction data. The biaxial stress states of the crystalline films were characterized through sin 2 (ψ) x-ray diffraction analysis. The in-plane stresses were all found to be tensile and observed to increase with the increasing zirconium composition, between 2.54 ± 0.6 GPa for pure HfO 2 and 5.22 ± 0.5 GPa for pure ZrO 2 . The stresses are consistent with large thermal expansion mismatches between the HZO films and silicon substrates. Furthermore, these results demonstrate a device-scale means to quantify biaxial stress for investigation on its effect on the ferroelectric properties of hafnia-based materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Sub-Microsecond Polarization Switching in (Al,Sc)N Ferroelectric Capacitors Grown on Complementary Metal-Oxide-Semiconductor-Compatible Aluminum Electrodes

In this work, the frequency-dependent ferroelectric properties of 45 nm (Al,Sc)N films sputter deposited on complementary metal–oxide–semiconductor (CMOS)-compatible Al metal electrodes are measured and compared. Low in-plane compressive stress (-10 ± 20 MPa) is observed in (Al,Sc)N thin films deposited on Al electrodes. The (Al,Sc)N films exhibit an imprint in the measured coercive fields (E c ) of -4.3/+5.3 MV cm -1 at 10 kHz. Using positive-up negative-down (PUND) measurements, ferroelectric switching is observed within ≈200 ns of an applied voltage pulse, which demonstrates the ability of ferroelectric (Al,Sc)N to achieve the fast read/write speeds desired in memory devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗