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Eskandari, Rahmatollah

Publications and source records attributed to Eskandari, Rahmatollah.

High-Performance Atomically-Thin Room-Temperature NO 2 Sensor

The development of room-temperature sensing devices for detecting small concentrations of molecular species is imperative for a wide range of low-power sensor applications. Here, we demonstrate a room-temperature, highly sensitive, selective, and reversible chemical sensor based on a monolayer of the transition metal dichalcogenide Re 0.5 Nb 0.5 S 2 . The sensing device exhibits thickness dependent carrier type, and upon exposure to NO 2 molecules, its electrical resistance considerably increases or decreases depending on the layer number. The sensor is selective to NO 2 with only minimal response to other gases such as NH 3 , CH 2 O, and CO 2 . In the presence of humidity, not only are the sensing properties not deteriorated, but also the monolayer sensor shows complete reversibility with fast recovery at room temperature. We present a theoretical analysis of the sensing platform and identify the atomically-sensitive transduction mechanism.

47 OTHER INSTRUMENTATION↗

Frustration and Atomic Ordering in a Monolayer Semiconductor Alloy

Frustrated interactions can lead to short-range ordering arising from incompatible interactions of fundamental physical quantities with the underlying lattice. The simplest example is the triangular lattice of spins with antiferromagnetic interactions, where the nearest-neighbor spin-spin interactions cannot simultaneously be energy minimized. In this work, we show that engineering frustrated interactions is a possible route for controlling structural and electronic phenomena in semiconductor alloys. Using aberration-corrected scanning transmission electron microscopy in conjunction with density functional theory calculations, we demonstrate atomic ordering in a two-dimensional semiconductor alloy as a result of the competition between geometrical constraints and nearest-neighbor interactions. Statistical analyses uncover the presence of short-range ordering in the lattice. In addition, we show how the induced ordering can be used as another degree of freedom to considerably modify the band gap of monolayer semiconductor alloys.

2-dimensional systems↗