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Duncan, C. S.

Publications and source records attributed to Duncan, C. S..

At least 19 records

Reduction Of Stresses In Growing Silicon Webs

New trenched lid intercepts less radiation from edges of growing silicon ribbon, giving rise to faster growth and temperature distribution resulting in lower residual stress. Cutting trench in susceptor lid allows edges of growing ribbon of silicon to cool more rapidly. Edges cool and solidify nearly same rate as center of ribbon, and thermal stress in ribbon reduced. Because of more-effective edge cooling, wider ribbon grown, and withdrawn at faster rate. Productivity of dendritic-web growth furnace increased.

Duncan, C. S.

Growing Wider Silicon Ribbons

New lid design makes larger withdrawal opening feasible. Wider silicon ribbons grown by dendritic-web method with proposed modification of furnace lid. Modification increases by about 22 percent size of portion of lid that limits ribbon width, potentially increasing area of single-crystal silicon ribbon and productivity.

Duncan, C. S.

Modified Withdrawal Slot Increases Silicon Production

New shape reduces ribbon breakage and resulting idle time. Shape for slot through which single-crystal silicon ribbon pulled from melt increases productivity. Reduces tendency of emerging ribbon to grow thin and break.

Piotrowsky, P. A.

Advanced dendritic web growth development and development of single-crystal silicon dendritic ribbon and high-efficiency solar cell program

Efforts to demonstrate that the dendritic web technology is ready for commercial use by the end of 1986 continues. A commercial readiness goal involves improvements to crystal growth furnace throughput to demonstrate an area growth rate of greater than 15 sq cm/min while simultaneously growing 10 meters or more of ribbon under conditions of continuous melt replenishment. Continuous means that the silicon melt is being replenished at the same rate that it is being consumed by ribbon growth so that the melt level remains constant. Efforts continue on computer thermal modeling required to define high speed, low stress, continuous growth configurations; the study of convective effects in the molten silicon and growth furnace cover gas; on furnace component modifications; on web quality assessments; and on experimental growth activities.

Duncan, C. S.

Prototype Furnace for Automatic Production of Silicon Ribbon

Single-crystal material grown under precise control. New furnace permits sustained growth of single-crystal silicon ribbon by dendritic-web growth process. Furnace brings together mechanisms necessary for continuous automatic operation.

Duncan, C. S.

Adjustable Lid Aids Silicon-Ribbon Growth

Closely-spaced crucible cover speeds up solidification. Growth rate of dendritic-web silicon ribbon from molten silicon increased by controlling distance between crucible susceptor lid and liquid/solid interface. Lid held in relatively high position when crucible newly filled with chunks of polycrystalline silicon. As silicon melts and forms pool of liquid at lower level, lid gradually lowered.

Mchugh, J. P.

Melt-Level Sensing in Silicon-Web Groowth

Laser beam reflected from silicon-melt surface onto position detector to monitor melt level during web growth. Silicon web production increased by synchronizing silicon melt replenishment with web growth rate.

Duncan, C. S.

Large-area sheet task advanced dendritic web growth development

The thermal models used for analyzing dendritic web growth and calculating the thermal stress were reexamined to establish the validity limits imposed by the assumptions of the models. Also, the effects of thermal conduction through the gas phase were evaluated and found to be small. New growth designs, both static and dynamic, were generated using the modeling results. Residual stress effects in dendritic web were examined. In the laboratory, new techniques for the control of temperature distributions in three dimensions were developed. A new maximum undeformed web width of 5.8 cm was achieved. A 58% increase in growth velocity of 150 micrometers thickness was achieved with dynamic hardware. The area throughput goals for transient growth of 30 and 35 sq cm/min were exceeded.

Duncan, C. S.

Large-area sheet task advanced dendritic web growth development

Modeling in the development of low stress configurations for wide web growth is presented. Parametric sensitivity to identify design features which can be used for dynamic trimming of the furnace element was studied. Temperature measurements of experimental growth behavior led to modification in the growth system to improve lateral temperature distributions.

Duncan, C. S.

Large-area sheet task advanced dendritic web growth development

The thermal stress models were used to test the effect of melt level on stress generation and growth velocity. The results indicate that melt level has only small effects on stresses but significant effects on growth velocity. These results are consistent with experimental growth from measured melt levels. A new low-stress design concept is being evaluated with the models. A width-limiting version of the low-stress J460 configuration was tested experimentally with results consistent with the design goals.

Duncan, C. S.

Pellet Feed for Dendritic-Web Growth

Melt replenishment system sustains continuous growth of silicon dentritic web for several days. Substantially increases size of batch, limited mainly by level of impurities and life of crucible. Silicon pellets automatically added to crucible sustain crystal growth for days.

Duncan, C. S.

Controlling Thermal Gradients During Silicon Web Growth

Strategically placed slot helps to control critical thermal gradients in crucible for silicon web growth. Slot thermally isolates feed region of crucible from growth region; region where pellets are added stays hot. Heat absorbed by pellets during melting causes thermal unbalance than upsets growth conditions.

Duncan, C. S.

Large-area sheet task: Advanced dendritic-web-growth development

Thermally generated stresses in the growing web crystal were reduced. These stresses, which if too high cause the ribbon to degenerate, were reduced by a factor of three, resulting in the demonstrated growth of high-quality web crystals to widths of 5.4 cm. This progress was brought about chiefly by the application of thermal models to the development of low-stress growth configurations. A new temperature model was developed which can analyze the thermal effects of much more complex lid and top shield configurations than was possible with the old lumped shield model. Growth experiments which supplied input data such as actual shield temperature and melt levels were used to verify the modeling results. Desirable modifications in the melt level-sensing circuitry were made in the new experimental web growth furnace, and this furnace has been used to carry out growth experiments under steady-state conditions. New growth configurations were tested in long growth runs at Westinghouse AESD which produced wider, lower stress and higher quality web crystals than designs previously used.

Duncan, C. S.

Large-area sheet task advanced dendritic web growth development

The computer code for calculating web temperature distribution was expanded to provide a graphics output in addition to numerical and punch card output. The new code was used to examine various modifications of the J419 configuration and, on the basis of the results, a new growth geometry was designed. Additionally, several mathematically defined temperature profiles were evaluated for the effects of the free boundary (growth front) on the thermal stress generation. Experimental growth runs were made with modified J419 configurations to complement the modeling work. A modified J435 configuration was evaluated.

Duncan, C. S.

Improved Facility for Producing Silicon Web

Growth of continuous silicon dendritic web that is up to 5 cm wide instead on only 1.3 cm is formed by freezing of supercooled liquid silicon between two needlelike dendritic crystals. Growth takes place in a work chamber filled with argon gas. As web grows, it is drawn out of chamber through a duct and guided to a storage reel.

Duncan, C. S.

Automatic Control of Silicon Melt Level

A new circuit, when combined with melt-replenishment system and melt level sensor, offers continuous closed-loop automatic control of melt-level during web growth. Installed on silicon-web furnace, circuit controls melt-level to within 0.1 mm for as long as 8 hours. Circuit affords greater area growth rate and higher web quality, automatic melt-level control also allows semiautomatic growth of web over long periods which can greatly reduce costs.

Duncan, C. S.

Large-area sheet task advanced dendritic web growth development

The "discrete shield' temperature model was completed and verified. Modifications to the J419 low stress configuration were tested experimentally to evaluate effects on growth speed. A composite lid and shield configuration combining the low stress features of the J419 with the width limiting characteristics of the J98M3 was fabricated and tested in the N-furnace. Several long crystals were grown with width limited to about 3.3 cm and with melt replenishment, although the configuration is not yet optimized for steady state growth.

Duncan, C. S.

Large-area sheet task advanced dendritic web growth development

The thermal stress model was used to generate the design of a low stress lid and shield configuration, which was fabricated and tested experimentally. In preliminary tests, the New Experimental Web Growth Facility performed as designed, producing web on the first run. These experiments suggested desirable design modifications in the melt level sensing system to improve further its performance, and these are being implemented.

Duncan, C. S.