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Dubinov, A. A.

Publications and source records attributed to Dubinov, A. A..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Balance-equation method for simulating terahertz quantum-cascade lasers using a wave-function basis with reduced dipole moments of tunnel-coupled states

A model based on a system of balance equations for localised and continuum states is developed to calculate the current − voltage (I − V) and power characteristics of quantum-cascade lasers (QCLs) operating in the terahertz (THz) range. A method for modifying the eigenbasis of the Schrödinger equation by reducing the dipole moments of tunnel-coupled states is proposed to take into account the effect of dephasing on the carrier transport. The calculated and experimental data on the current − voltage characteristics and the dependence of the integrated radiation intensity on current for the THz QCLs lasing at 2.3 THz are compared. The calculated and measured values of the threshold current, lasing current range, and maximum operating temperature T{sub max} are found to be in good agreement. It is shown that T{sub max} can be increased by 25 % by reducing the thickness of the top contact layer n{sup +}-GaAs of the laser structure under study from 800 to 100 nm. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Second-Harmonic Generation of Subterahertz Gyrotron Radiation by Frequency Doubling in InP:Fe and Its Application for Magnetospectroscopy of Semiconductor Structures

The possibility of obtaining intense terahertz radiation due to second-order lattice nonlinearity in indium-phosphide crystals doped with iron is discussed. As a source of radiation, subterahertz gyrotrons are considered. It is shown that the efficiency of frequency doubling can reach 3%, which opens up the possibility for developing a new generation of terahertz radiation sources. The possibility of applying second-harmonic radiation for the magnetospectroscopy of semiconductor structures with quasi-Dirac dispersion is demonstrated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Study of the Auger Recombination Energy Threshold in a Series of Waveguide Heterostructures with HgTe/Cd{sub 0.7}Hg{sub 0.3}Te QWs Near 14 μm

Stimulated emission from a heterostructure with Hg{sub 0.903}Cd{sub 0.097}Te/Cd{sub 0.7}Hg{sub 0.3}Te quantum wells, placed in a waveguide layer of wide-gap CdHgTe, is obtained at wavelengths of 14–11 μm and a temperatures of 18–80 K. The threshold Auger recombination energy is calculated for a set of heterostructures with quantum wells of pure HgTe with a band gap of 90 meV (wavelength 14 μm). The possibility of fabricating lasers operating at 14 μm and working temperatures higher than that of liquid nitrogen is demonstrated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Generation of THz radiation at a difference frequency in a HgCdTe-based laser

The results of a theoretical study of THz radiation generation at a difference frequency in a HgTe/HgCdTe quantum-well laser are presented. It is shown that in such a laser having a waveguide width of 100 μm, at the power 1 W of the near-IR radiation modes the radiation power at the difference frequency in the range 0.5 – 3.5 THz reaches 90 μW at room temperature. (terahertz radiation)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Effect of Cd content in barriers on the threshold energy of Auger recombination in waveguide structures with HgTe/Cd{sub x}Hg{sub 1 – x}Te quantum wells, emitting at a wavelength of 18 μm

The threshold energy of Auger recombination in HgTe/Cd{sub x}Hg{sub 1 – x}Te heterostructures with quantum wells (QWs) is analysed numerically for different compositions of the solid solution in barriers. It is demonstrated that the threshold energy depends nonmonotonically on the cadmium content in barriers and reaches a maximum at x ∼0.6 – 0.7. A comparison of the results of numerical calculations with experimental data on the temperature quenching of stimulated emission in a Cd{sub 0.1}Hg{sub 0.9}Te/Cd{sub 0.65}Hg{sub 0.35}Te structure gives grounds to expect a more than twofold increase in the quenching temperature of stimulated emission in structures with pure HgTe QWs and barriers with a high (∼0.6) cadmium content. (paper)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates

The results of studying the reverse dark currents of photodiodes for a wavelength of 1.06 μm grown on a GaAs substrate with the help of an InGaP metamorphic buffer layer are presented. The metalorganic chemical vapor epitaxy (MOCVD) growth technology of InGaP metamorphic buffer layers with a stepwise composition variation is developed. Photodiodes with a photosensitive area of 1 mm in diameter and radiation input through the substrate are fabricated. The photodiode dark current at room temperature and reverse bias of –3 V was 50 nA. It is assumed that the bulk component of the dark current is caused by the tunneling mechanism through the trap levels.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Mode loss spectra in THz quantum-cascade lasers with gold- and silver-based double metal waveguides

Spectra of the waveguide loss coefficient for THz radiation of a quantum-cascade laser with a gold- and silver-based double metal waveguide (DMW) are calculated based on the measurements of resistivity of the metals for different temperatures. It is shown that, taking into account the absorption of THz radiation by free carriers and optical phonons, the spectrum of total mode losses has a broad minimum in the range of 3 – 6 THz, which shifts to higher frequencies with increasing temperature. The minimum losses in the Au-based waveguide increase from 8 to 27 cm{sup –1} as temperature increases from 100 to 300 K. The use of an Ag-based DMW makes it possible to decrease the losses by 2 – 4 cm{sup –1} compared to the Au-based DMW. The bibliography includes 21 references. (terahertz radiation)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates

Hybrid laser structures with AlGaInAs quantum wells are grown by metalorganic vapor phase epitaxy on Ge/Si(100) “virtual” substrates using GaAs and InP buffer layers. Stimulated emission is achieved under optical pumping of the prepared samples in the range of 1.3–1.5 μm at liquid-nitrogen temperature. The stimulated-emission threshold is 30–70 kW/cm{sup 2}.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Magnetooptical Studies and Stimulated Emission in Narrow Gap HgTe/CdHgTe Structures in the Very Long Wavelength Infrared Range

We investigate the prospects of HgTe/HgCdTe quantum wells for long-wavelength interband lasers (λ = 15–30 μm). The properties of stimulated emission (SE) and magnetoabsorbtion data of QWs structures with wide-gap HgCdTe dielectric waveguide provide an insight on dominating non-radiative carrier recombination mechanism. It is shown that the carrier heating under intense optical pumping is the main factor limiting the SE wavelength and intensity, since the Auger recombination is greatly enhanced when carriers populate high energy states in the valence band.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Power characteristics of lasers with quantum-well waveguides and blocking layers

The power characteristics of lasers with a quantum-well (QW) waveguide are calculated based on a complex model taking into account the diffusion and drift of charge carriers, capture of electrons and holes at the QW levels, spatial distribution of radiation in the cavity, intraband absorption, and heating of the active region. Structures with doped blocking barrier layers are proposed, which allow one to decrease leakage currents to a few percent. The calculated average output power of a laser based on the GaInAs/GaAs QW heterostructure (aperture 100 μm) with a QW waveguide and a GaAsP doped blocking layer in a pulsed regime was 29 W at 80-A current pulses with a duration of 5 μs. (lasers)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission

The photoluminescence and stimulated emission during interband transitions in quantum wells based on HgCdTe placed in an insulator waveguide based on a wide-gap CdHgTe alloy are studied. Heterostructures with quantum wells based on HgCdTe are of interest for the development of long-wavelength lasers in the range of 25–60 μm, which is currently unattainable for quantum-cascade lasers. Optimal designs of quantum wells for attainment of long-wavelength stimulated emission under optical pumping are discussed. It is shown that narrow quantum wells from pure HgTe appear to be more promising for long-wavelength lasers in comparison with wide (potential) wells from the alloy due to the suppression of Auger recombination. It is demonstrated that molecular-beam epitaxy makes it possible to obtain structures for the localization of radiation with a wavelength of up to 25 μm at a high growth rate. Stimulated emission is obtained for wavelengths of 14–6 μm with a threshold pump intensity in the range of 100–500 W/cm{sup 2} at 20 K.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

The growth of InGaAs/GaAs/AlGaAs laser structures by MOCVD at low pressures on Si(001) substrates with a Ge epitaxial metamorphic buffer layer of various thicknesses is studied. The results of the influence of the growth temperature and incorporation of additional AlAs layers at the boundary with the Ge/Si(001) substrate on the crystalline and optical quality of the formed III–V structures are presented. It is shown that the incorporation of the AlAs/GaAs/AlAs lattice at the initial growth stages of III–V heterostructures on Ge buffer layers grown on exact Si(001) substrates makes it possible to considerably decrease the density of threading defects and, consequently, form effectively emitting laser structures. The possibility of growing strained InGaAs quantum wells on Si(001) substrates allowing stimulated radiation in a wavelength region longer than 1100 nm is shown.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well

The results of investigation of a metal-organic-vapor-phase-epitaxy-grown GaAsSb/GaAs/InGaP laser structure are presented. Steady two-band generation caused by spatially direct and indirect optical transitions is obtained. Observation of the sum frequency shows the effective intracavity mixing of modes in semiconductor lasers of such a type.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells

The interband photoconductivity and photoluminescence in narrow-gap HgCdTe-based waveguide structures with quantum wells (QWs) (designed for long-wavelength stimulated emission under optical pumping) are investigated. The photoconductivity relaxation times in n-type structures reach several microseconds, due to which stimulated emission at a wavelength of 10.2 μm occurs at a low threshold pump intensity (~100 W/cm{sup 2}) at 20 K. In the p-type structures obtained by annealing (to increase the mercury vacancy concentration), even spontaneous emission from the QWs is not detected because of a dramatic decrease in the carrier lifetime with respect to Shockley–Read–Hall nonradiative recombination.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

We report on realization of the InGaAs/GaAs/AlGaAs quantum well laser grown by metallorganic chemical vapor deposition on a virtual Ge-on-Si(001) substrate. The Ge buffer layer has been grown on a nominal Si(001) substrate by solid-source molecular beam epitaxy. Such Ge buffer possessed rather good crystalline quality and smooth surface and so provided the subsequent growth of the high-quality A{sub 3}B{sub 5} laser structure. The laser operation has been demonstrated under electrical pumping at 77 K in the continuous wave mode and at room temperature in the pulsed mode. The emission wavelengths of 941 nm and 992 nm have been obtained at 77 K and 300 K, respectively. The corresponding threshold current densities were estimated as 463 A/cm{sup 2} at 77 K and 5.5 kA/cm{sup 2} at 300 K.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Long wavelength stimulated emission up to 9.5 μm from HgCdTe quantum well heterostructures

Stimulated emission from waveguide HgCdTe structures with several quantum wells inside waveguide core is demonstrated at wavelengths up to 9.5 μm. Photoluminescence line narrowing down to kT energy, as well as superlinear rise in its intensity evidence the onset of the stimulated emission, which takes place under optical pumping with intensity as small as ∼0.1 kW/cm{sup 2} at 18 K and 1 kW/cm{sup 2} at 80 K. One can conclude that HgCdTe structures potential for long-wavelength lasers is not exhausted.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

On a semiconductor laser with a p–n tunnel junction with radiation emission through the substrate

A multiwell interband cascade laser with a tunnel junction within a single waveguide and radiation emission through the substrate is implemented for the first time. It is shown that such a laser heterostructure design provides the more efficient population of quantum wells in comparison with a conventional multiwell laser with radiation emission through the substrate, due to which the lasing threshold is significantly lowered.

36 MATERIALS SCIENCE↗