Engineering topics
Publications and source records attributed to Downing, R. G..
Solar cells tested for effects of radiation in unidirectional beam. Cam groove imparts cosecant-function velocity to solar cells on rotating target plate. Cells on stationary plate above rotating one absorb steady perpendicular radiation from test source.
The Solar Cell Calibration Facility (SCCF) experiment was designed and built to evaluate the effect of the Earth's upper atmosphere on the calibration of solar cell standards. During execution of the experiment, a collection of carefully selected solar cells was flown on the shuttle, and reflown on a high-altitude balloon, then their outputs were compared. After correction to standard temperature and intensity values of 28 C and an Earth-Sun distance of 1 AU, the solar cell outputs during the two flights were found to be identical. The conclusion is therefore that the high-altitude balloon flights are very good vehicles for calibrating solar cells for use as space flight reference standards.
The 1984 solar cell calibration balloon flight was successfully completed on July 19, meeting all objectives of the program. Thirty-six modules were carried to an altitude of 36.0 kilometers. The calibrated cells can now be used as reference standards in simulator testing of cells and arrays.
Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.
The 1983 solar cell calibration balloon flight was successfully completed and met all objectives of the program. Thirty-four modules were carried to an altitude of 36.0 kilometers. The calibrated cells can now be used as reference standards in simulator testing of cells and arrays. Cell calibration data are tabulated as well as the repeatability of standard solar cell BFS-17A (35 flights over a 21-year period).
Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.
The 1982 solar cell calibration balloon flight was successfully completed on July 21, meeting all objectives of the program. Twenty-eight modules were carried to an altitude of 36.0 kilometers. The calibrated cells can now be used as reference standards in simulator testing of cells and arrays.
The handbook to predict the degradation of solar cell electrical performance in any given space radiation environment is presented. Solar cell theory, cell manufacturing and how they are modeled mathematically are described. The interaction of energetic charged particles radiation with solar cells is discussed and the concept of 1 MeV equivalent electron fluence is introduced. The space radiation environment is described and methods of calculating equivalent fluences for the space environment are developed. A computer program was written to perform the equivalent fluence calculations and a FORTRAN listing of the program is included. Data detailing the degradation of solar cell electrical parameters as a function of 1 MeV electron fluence are presented.
Electrical characteristics of liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature. The solar cells were exposed to 1 MeV electron fluences of, respectively, 0, one hundred trillion, one quadrillion, and ten quadrillion e/sq cm.
Electron and proton damage coefficients have been measured for several types of silicon cells of recent manufacture using 1 MeV electrons and protons with energies of 8.3, 17.5 and 40 MeV. LPE (AlGa)As-GaAs cells were also irradiated and pseudodamage coefficients derived under the assumption that the irradiation changes the diffusion length in only one of the n- or p-type layers. After irradiation the cells were annealed isochronally up to 450 C. The damage coefficient and annealing data for silicon cells are in substantial agreement with previous work. The GaAs cells have pseudo-damage coefficients which are dependent on fluence, and have about the same energy dependence as Si damage coefficients.
Electrical characteristics of Hughes Liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature.
Electrical characteristics of Solarex back-surface-field, 2-ohm-cm, 50-micron N/P silicon solar cells are presented in graphical and tabular format as a function of solar illumination intensity, temperature, and irradiation.
Parametric characterization data on Spectrolab 2 by 4 cm, 2 ohm/cm, 228 micron thick wraparound cell, a candidate for the Solar Electric Propulsion Mission, are presented. These data consist of the electrical characteristics of the solar cell under a wide range of temperature and illumination intensity combinations of the type encountered in space applications.
Moderate resolution spectral irradiance measurements in the range 300 nm to 1100 nm have been made of eight radiant sources which are currently being used as solar simulators. Spectral irradiance data are presented in graphical form. To demonstrate the interplay of source spectral distribution and cell spectral response, measurements of short circuit current of five cells of differing response characteristics have been made with these sources. These results are presented in tabular and graphical form.
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Electrical characteristics of textured, back surface field, 10 ohm cm, 300 micron N/P silicon solar cells are presented in graphical and tabular format as a function of solar illumination intensity, and temperature.
A set of parametric data is presented on the Spectrolab textured, back-surface-field, back-surface-reflector solar cell which is a commercially available product.