Engineering Papers⌕ Search

Engineering topics

Douglas, Erica Ann

Publications and source records attributed to Douglas, Erica Ann.

12 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Metal stack templates for suppressing secondary grains in sca1n

A metal stack for templating the growth of AlN and ScAlN films is disclosed. The metal stack comprises one, two, or three layers of metal, each of which is compatible with CMOS post-processing. The metal stack provides a template that promotes the growth of highly textured c-axis {002} AlN and ScAlN films. The metal stacks include one or more metal layers with each metal layer having either a hexagonal {002} orientation or a cubic {111} orientation. If the metal stack includes two or more metal layers, the layers can alternate between hexagonal {002} and cubic {111} orientations. The use of ScAlN results in a higher piezoelectric constant compared to that of AlN for ScAlN alloys up to approximately 44% Sc. The disclosed metal stacks resulted in ScAlN films having XRD FWHM values of less than approximately 1.1° while significantly reducing the formation of secondary grains in the ScAlN films.

Esteves, Giovanni↗
DOE OSTI2022

AI-Enhanced Co-Design for Next-Generation Microelectronics: Innovating Innovation [Workshop Report]

In April 5-7, 2022, Sandia National Laboratories hosted a second virtual workshop to further explore the potential for developing AI-enhanced co-design for microelectronics (AICoM). This second piece in an ongoing workshop series again brought together two themes. The first theme, co-design for next generation microelectronics, was drawn from the 2018 Department of Energy Office of Science (DOE SC) “Basic Research Needs for Microelectronics” (BRN) report (DOE/SC, 2018, 2021), which called for a “fundamental rethinking” of the traditional design approach to microelectronics, in which subject matter experts (SMEs) in each microelectronics discipline (materials, devices, circuits, algorithms, etc.) work near-independently. Instead, the BRN called for a non-hierarchical, egalitarian vision of co-design, wherein “each scientific discipline informs and engages the others” in “parallel but intimately networked efforts to create radically new capabilities.” The second theme, exploiting and advancing artificial intelligence (AI) to support co-design for microelectronics, acknowledges the continuing breakthroughs in AI that are currently enhancing and accelerating solutions to traditional design problems in materials synthesis and processing, circuit design, and electronic design automation (EDA).

42 ENGINEERING↗
DOE OSTI2021

Demonstration of a MOT in a sub-millimeter membrane hole

Abstract We demonstrate the generation of a cold-atom ensemble within a sub-millimeter diameter hole in a transparent membrane, a so-called “membrane MOT”. With a sub-Doppler cooling process, the atoms trapped by the membrane MOT are cooled down to 10 $$\upmu$$ μ K. The atom number inside the unbridged/bridged membrane hole is about $$10^4$$ 10 4 to $$10^5$$ 10 5 , and the $$1/e^2$$ 1 / e 2 -diameter of the MOT cloud is about 180 $$\upmu$$ μ m for a 400 $$\upmu$$ μ m-diameter membrane hole. Such a membrane device can, in principle, efficiently load cold atoms into the evanescent-field optical trap generated by the suspended membrane waveguide for strong atom-light interaction and provide the capability of sufficient heat dissipation at the waveguide. This represents a key step toward the photonic atom trap integrated platform (ATIP).

74 ATOMIC AND MOLECULAR PHYSICS↗