Engineering topics

Dong, Jiaqi

Publications and source records attributed to Dong, Jiaqi.

5 records

DOE OSTI2024

Selective modulation of electronic transport in VO 2 induced by 10 keV helium ion irradiation

Vanadium dioxide (VO 2 ) manifests an abrupt metal–insulator transition (MIT) from monoclinic to rutile phases, with potential use for tunable electronic and optical properties and spiking neuromorphic devices. Understanding pathways to modulate electronic transport in VO 2 , as well as its response to irradiation (e.g., for space applications), is critical to better enable these applications. In this work, we investigate the selective modulation of electronic transport in VO 2 films subject to different 10 keV helium ion (He + ) fluences. Under these conditions, the resistivity in the individual monoclinic and rutile phases varied by 50%–200%, while the MIT transformation temperature remains constant within 4 °C independent of irradiation fluence. Importantly, different trends in the resistivity of the monoclinic and rutile phases were observed both as a function of total He fluence as well as in films grown on different substrates (amorphous SiO 2 /Si vs single crystal Al 2 O 3 ). Through a combination of measurements including majority carrier sign via Seebeck, low frequency noise, and TEM, our investigation supports the presence of different kinds of point defects (V in; O in), which may arise due to grain boundary defect interactions. Our work suggests the utility of He irradiation for the selective modulation of VO 2 transport properties for neuromorphic, in contrast to other established but non-selective methods, like doping.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Evolution of dislocation substructures in metals via high-strain-rate nanoindentation

Deformation at high strain rates often results in high stresses on many engineering materials, potentially leading to catastrophic failure without proper design. High-strain-rate mechanical testing is thus needed to improve the design of future structural materials for a wide range of applications. Although several high-strain-rate mechanical testing techniques have been developed to provide a fundamental understanding of material responses and microstructural evolution under high-strain-rate deformation conditions, these tests are often very time consuming and costly. In this work, we utilize a high-strain-rate nanoindentation testing technique and system in combination with transmission electron microscopy to reveal the deformation mechanisms and dislocation substructures that evolve in pure metals from low (10 –2 s –1 ) to very high indentation strain rates (10 4 s –1 ), using face-centered cubic aluminum and body-centered cubic molybdenum as model materials. The results help to establish the conditions under which micro- and macro-scale tests can be compared with validity and also provide a promising pathway that could lead to accelerated high-strain-rate testing at substantially reduced costs.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Deformation mechanisms in an additively manufactured dual-phase eutectic high-entropy alloy

Nanostructured metals and alloys often exhibit high strengths but at the expense of reduced ductility. Through harnessing the far-from-equilibrium processing conditions of laser powder-bed fusion (L-PBF) additive manufacturing, we develop a dual-phase nanolamellar structure comprised of FCC/L1 2 and BCC/B2 phases in a Ni 40 Co 20 Fe 10 Cr 10 Al 18 W 2 eutectic high-entropy alloy (EHEA), which exhibits a combination of ultrahigh yield strength (>1.4 GPa) and large tensile ductility (~17%). The deformation mechanisms of the additively manufactured EHEA are studied via in-situ synchrotron X-ray diffraction and high-resolution transmission electron microscopy. The high yield strength mainly results from effective blockage of dislocation motion by the high density of lamellar interfaces. The refined nanolamellar structures and low stacking fault energy (SFE) promote stacking fault (SF)-mediated deformation in FCC/L1 2 nanolamellae. The accumulation of abundant dislocations and SFs at lamellar interfaces can effectively elevate local stresses to promote dislocation multiplication and martensitic transformation in BCC/B2 nanolamellae. The cooperative deformation of the dual phases, assisted by the semi-coherent lamellar interfaces, gives rise to the large ductility of the as-printed EHEA. In addition, here we also demonstrate that post-printing heat treatment allows us to tune the non-equilibrium microstructures and deformation mechanisms. After annealing, the significantly reduced SFE and thicknesses of the FCC nanolamellae facilitate the formation of massive SFs. The dissolution of nano-precipitates in the BCC/B2 nanolamellae reduces spatial confinement and further promotes martensitic transformation to enhance work hardening. Our work provides fundamental insights into the rich variety of deformation mechanisms underlying the exceptional mechanical properties of the additively manufactured dual-phase nanolamellar EHEAs.

36 MATERIALS SCIENCE↗

DOE OSTI2023

A reference-area-free strain mapping method using precession electron diffraction data

Here, in this work, we developed a method using precession electron diffraction data to map the residual elastic strain at the nano-scale. The diffraction pattern of each pixel was first collected and denoised. Template matching was then applied using the center spot as the mask to identify the positions of the diffraction disks. Statistics of distances between the selected diffracted disks enable the user to make an informed decision on the reference and to generate strain maps. Strain mapping on an unstrained single crystal sapphire shows the standard deviation of strain measurement is 0.5%. With this method, we were able to successfully measure and map the residual elastic strain in VO 2 on sapphire and martensite in a Ni 50.3 Ti 29.7 Hf 20 shape memory alloy. This approach does not require the user to select a “strain-free area” as a reference and can work on datasets even with the crystals oriented away from zone axes. This method is expected to provide a robust and more accessible alternative means of studying the residual strain of various material systems that complements the existing algorithms for strain mapping.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2023

Crystallographic variant mapping using precession electron diffraction data

In this work, we developed three methods to map crystallographic variants of samples at the nanoscale by analyzing precession electron diffraction data using a high-temperature shape memory alloy and a VO2 thin film on sapphire as the model systems. The three methods are (I) a user-selecting-reference pattern approach, (II) an algorithm-selecting-reference-pattern approach, and (III) a k-means approach. In the first two approaches, Euclidean distance, Cosine, and Structural Similarity (SSIM) algorithms were assessed for the diffraction pattern similarity quantification. We demonstrated that the Euclidean distance and SSIM methods outperform the Cosine algorithm. We further revealed that the random noise in the diffraction data can dramatically affect similarity quantification. Denoising processes could improve the crystallographic mapping quality. With the three methods mentioned above, we were able to map the crystallographic variants in different materials systems, thus enabling fast variant number quantification and clear variant distribution visualization. The advantages and disadvantages of each approach are also discussed. We expect these methods to benefit researchers who work on martensitic materials, in which the variant information is critical to understand their properties and functionalities.

Crystallographic variant mapping↗