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Dong, Hongliang

Publications and source records attributed to Dong, Hongliang.

10 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Solution epitaxy of polarization-gradient ferroelectric oxide films with colossal photovoltaic current

Solution growth of single-crystal ferroelectric oxide films has long been pursued for the low-cost development of high-performance electronic and optoelectronic devices. However, the established principles of vapor-phase epitaxy cannot be directly applied to solution epitaxy, as the interactions between the substrates and the grown materials in solution are quite different. Here, we report the successful epitaxy of single-domain ferroelectric oxide films on Nb-doped SrTiO 3 single-crystal substrates by solution reaction at a low temperature of ~200 o C. The epitaxy is mainly driven by an electronic polarization screening effect at the interface between the substrates and the as-grown ferroelectric oxide films, which is realized by the electrons from the doped substrates. Atomic-level characterization reveals a nontrivial polarization gradient throughout the films in a long range up to ~500 nm because of a possible structural transition from the monoclinic phase to the tetragonal phase. This polarization gradient generates an extremely high photovoltaic short-circuit current density of ~2.153 mA/cm 2 and open-circuit voltage of ~1.15 V under 375 nm light illumination with power intensity of 500 mW/cm 2 , corresponding to the highest photoresponsivity of ~4.306×10 -3 A/W among all known ferroelectrics. Our results establish a general low-temperature solution route to produce single-crystal gradient films of ferroelectric oxides and thus open the avenue for their broad applications in self-powered photo-detectors, photovoltaic and optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Phase Transitions in Amorphous Germanium under Non-Hydrostatic Compression

As the pioneer semiconductor in transistor, germanium (Ge) has been widely applied in information technology for over half a century. Although many phase transitions in Ge have been reported, the complicated phenomena of the phase structures in amorphous Ge under extreme conditions are still not fully investigated. Here, we report the different routes of phase transition in amorphous Ge under different compression conditions utilizing diamond anvil cell (DAC) combined with synchrotron-based X-ray diffraction (XRD) and Raman spectroscopy techniques. Upon non-hydrostatic compression of amorphous Ge, we observed that shear stress facilitates a reversible pressure-induced phase transformation, in contrast to the pressure-quenchable structure under a hydrostatic compression. These findings afford better understanding of the structural behaviors of Ge under extreme conditions, which contributes to more potential applications in the semiconductor field.

Xu, Jianing (ORCID:0000000325474344)↗
DOE OSTI2021

A tunable band gap of the layered semiconductor Zn 3 In 2 S 6 under pressure

The band gap is an important property of a semiconductor, and a candidate material with a highly tunable band gap under external tuning parameters will offer wider applications in optoelectronic devices and photocatalytic fields. Here, we show that the layered semiconductor Zn 3 In 2 S 6 possesses a band gap that is highly tunable with pressure. In situ optical absorption shows that the band gap unexpectedly widens with pressure up to ~13 GPa. Sudden gap narrowing then occurs above 14 GPa, which is followed by progressive gap decreases on further compression and the gap finally closes above 20 GPa. Our study, encompassing X-ray diffraction, Raman spectroscopy experiments and theoretical calculations revealed that the selective responses of the different bonds are responsible for the band gap increase in the low-pressure ranges. We show that the pressure-induced irreversible amorphization is responsible for the sudden gap narrowing whereas the semiconductor–metallic transition is related to the amorphous–amorphous transition at high-pressure due to a change in the local coordination number of Zn atoms. This work demonstrates the high tunability of the electronic and optical properties of layered ternary semiconductors under pressure, providing a potential way for wider applications of this class of materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

A strain-driven thermotropic phase boundary in BaTiO 3 at room temperature by cycling compression

In BaTiO 3 single crystals, we observed a strain-driven phase transition from the tetragonal phase to the tetragonal-orthorhombic phase boundary which can be introduced by slow cycling compressions (a loading of up to 0.5 GPa, strain rate of 10 -4 s -1 , and 100 cycles) at room temperature. Different from the well-known tetragonal to cubic phase transition under stress (~2 GPa), it only takes place locally around bent 90° domain walls. The inhomogeneous local stress and electrical fields as well as the mobile point defect pinning effect contribute to the phase re-entrance. Through comparison experiments by in situ synchrotron x-ray diffraction, Raman scattering, and (scanning) transmission electron microscopy, we explored the phase transition mechanism. Based on that, we developed a mechanical method to obtain well-stabilized high-density thermotropic phase boundary structures (with tetragonal, orthorhombic, and bridging monoclinic phases) in BaTiO 3 for potential applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Structural and mechanical properties of magnesium aluminate nanoceramics under high pressure

Nanoceramics may have different structural and physical properties compared to their coarse-grained counterparts. Here, we report the high-pressure study of micro- and nano-crystalline MgAl2O4 in order to examine the effect of particle size on the structural stability. A reversible pressure-induced phase transition (cubic to tetragonal) is observed in MgAl2O4 nanocrystals under non-hydrostatic pressure at room temperature, in contrast to the previously reported structural transition of MgAl2O4 at high pressure and high temperature. It is also found that the compressed MgAl2O4 microcrystals do not fracture further below 60 nm, suggesting a plastic deformation mechanism transition. MgAl2O4 with a grain size above ∼60 nm exhibits normal cracking behaviors, but shows metal-like plastic deformation behaviors below this critical size. It is implied that combined ductility and strength can be achieved in nanoceramic MgAl2O4.

Xu, Jianing (ORCID:0000000325474344)↗
DOE OSTI2020

High-pressure strengthening in ultrafine-grained metals

The Hall–Petch relationship, according to which the strength of a metal increases as the grain size decreases, has been reported to break down at a critical grain size of around 10 to 15 nanometres. As the grain size decreases beyond this point, the dominant mechanism of deformation switches from a dislocation-mediated process to grain boundary sliding, leading to material softening. In one previous approach, stabilization of grain boundaries through relaxation and molybdenum segregation was used to prevent this softening effect in nickel–molybdenum alloys with grain sizes below 10 nanometres. Here we track in situ the yield stress and deformation texturing of pure nickel samples of various average grain sizes using a diamond anvil cell coupled with radial X-ray diffraction. Our high-pressure experiments reveal continuous strengthening in samples with grain sizes from 200 nanometres down to 3 nanometres, with the strengthening enhanced (rather than reduced) at grain sizes smaller than 20 nanometres. Here, we achieve a yield strength of approximately 4.2 gigapascals in our 3-nanometre-grain-size samples, ten times stronger than that of a commercial nickel material. A maximum flow stress of 10.2 gigapascals is obtained in nickel of grain size 3 nanometres for the pressure range studied here. We see similar patterns of compression strengthening in gold and palladium samples down to the smallest grain sizes. Simulations and transmission electron microscopy reveal that the high strength observed in nickel of grain size 3 nanometres is caused by the superposition of strengthening mechanisms: both partial and full dislocation hardening plus suppression of grain boundary plasticity. These insights contribute the ongoing search for ultrastrong metals via materials engineering.

36 MATERIALS SCIENCE↗