Efficient GaAlAs diode-laser-pumped operation of Nd:YLF at 1.047 micron with intracavity doubling to 523.6 nm
Diode-laser-pumped Nd:YLF lasers are demonstrated at 1.047 microns with less than 1-mW thresholds and internal quantum efficiencies approaching 70 percent. Operation at 1.053 microns has also been achieved. Intracavity second-harmonic generation using MgO:LiNbO3 has generated up to 145-micro-W output at 523.6 nm for 30.1 mW of diode-laser pump power.