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Dillon, O. W., Jr.

Publications and source records attributed to Dillon, O. W., Jr..

Dislocation dynamics and the viscoplastic buckling of dendritic web type silicon ribbon

The effect of dendrites (reinforced edges) on the residual stresses, dislocation densities and buckling behavior during growth of web type silicon ribbon is studied. A viscoplastic material response function (Haasen-Sumino model) is used to calculate the stresses and the disloction density at each point in the silicon ribbon. In addition, the role of dendrites on the viscoplastic buckling behavior of the ribbon is investigated. The critical thicknesses, the corresponding deflection shapes and lateral deflection speeds are calculated. These results are then compared with similar data obtained for flat plates.

Tsai, C. T.↗

Dislocation dynamics of web type silicon ribbon

Silicon ribbon grown by the dendritic web process passes through a rapidly changing thermal profile in the growth direction. This rapidly changing profile induces stresses which produce changes in the dislocation density in the ribbon. A viscoplastic material response function (Haasen-Sumino model) is used herein to calculate the stresses and the dislocation density at each point in the silicon ribbon. The residual stresses are also calculated.

Dillon, O. W., Jr.↗

Thermal stresses and buckling of elastic plates with reinforced edges

An approximation method based on the method of Kantorovich is used to calculate the critical thickness necessary to prevent thermal buckling of a rectangular cantilever plate with edge stiffeners. The case where no external loads are applied is considered, and the only stresses are those due to the prescribed thermal profile. Stiffeners are found to play an important role in the thermal buckling by affecting the overall distribution of the in-plane stresses within the plate. Results show that edge stiffeners can cause less or more buckling, and that in most situations the edge stiffeners hinder buckling because a thicker plate is required than if the stiffeners were not present.

Ahmed, M.↗

Thermal viscoplastic buckling during the growth of silicon ribbon

This paper is an analysis of the conditions to be satisfied in order to avoid buckling during the growth of a silicon ribbon that is being slowly pulled from the melt. A viscoplastic constitutive equation with a dislocation density effect is used to model the material behavior. The critical thicknesses and the corresponding deflection shapes are calculated by the finite element method for the cantilever boundary conditions. The value of the parameter which controls the speed of the lateral deflection is computed by using Galerkin's method. It is demonstrated that, due to the effect of viscoplasticity, some deflection shapes increase in magnitude with time and other shapes damp out.

Tsai, C. T.↗

Dislocation dynamics during the growth of silicon ribbon

The thermal viscoplastic stresses and the dislocation densities in silicon ribbon are computed for an axially changing thermal profile by using an iterative finite difference method. A material constitutive equation (Haasen-Sumino model) which involves an internal variable (mobile dislocation density) is used. The results are interpreted as showing that there is a maximum width of silicon ribbon that can be grown when viscoplasticity and dislocations are considered. This maximum width limitation does not exist if the material behavior is elastic.

Dillon, O. W., Jr.↗

In plane stress analysis

An investigation of the blowing up of UK numerical results for the inplane stress calculations for silicon ribbon is presented. The inplane stress that exists in a thin plate is governed by two general equations of equilibrium and compatibility.

Dillon, O. W., Jr.↗

Stress-strain analysis of silicon ribbon

Temperature profiles for silicon ribbon are presented. Ribbon dislocations and elastic stress are discussed. Ribbon quality is important for the ribbon's function as a solar cell.

Dillon, O. W., Jr.↗

Analysis of stress-strain relationships in silicon ribbon

An analysis of stress-strain relationships in silicon ribbon is presented. A model to present entire process, dynamical Transit Analysis is developed. It is found that knowledge of past-strain history is significant in modeling activities.

Dillon, O. W., Jr.↗

Stress and buckling analysis

An analysis is presented of elastic stress and buckling behavior due to thermal stresses in silicon ribbon. Thermal profiles for reducing stresses and improving flatness in wide ribbon are discussed.

Dillon, O. W., Jr.↗

An Improved Analysis of the Thermal Buckling of Silicon Sheet

Buckling problems on the production of wide and thin silicon sheet are discussed. Buckling occurs in all of the processes which are investigated for their potential in mass producing wide silicon sheet for use in making solar cells. It is a fact that the processes which produce good ribbon 2 cm in width do not yield the same quality product at 10 cm in width. Buckling develops precisely because the sheets are wide and very very thin. The buckling of very thin cantilever plates due to temperature variations in the axial direction is considered. The temperature variation in the width direction was determined. Axial temperature variations which cause very thin plates to buckle in a torsional mode are demonstrated. It is assumed that the particular variation of the stress function in the width direction and thereafter the analysis is exact.

Dillon, O. W., Jr.↗

Coupled thermoelasticity of bars.

Boundary value problems for semiinfinite bars made of coupled thermoelastic material solved by new functions that are corrections to classic tabulated functions

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