The DUV Stability of Superlattice-Doped CMOS Detector Arrays
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Engineering topics
Publications and source records attributed to Dickie, M..
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In this paper, we present experimental results and band structure calculations that illuminate the unique properties of superlattice-doped detectors. Numerical band structure calculations are presented to analyze the dependencies of surface passivation on dopant profiles and interface trap densities (Figure 3). Experiments and calculations show that quantum-engineered surfaces, grown at JPL by low temperature molecular beam epitaxy, achieve a qualitative as well as quantitative uniqueness in their near-immunity to high densities of surface and interface traps.
JPL and Alacron have recently developed a high performance, DUV camera with a superlattice doped CMOS imaging detector. Supperlattice doped detectors achieve nearly 100% internal quantum efficiency in the deep and far ultraviolet, and a single layer, Al2O3 antireflection coating enables 64% external quantum efficiency at 263nm. In lifetime tests performed at Applied Materials using 263 nm pulsed, solid state and 193 nm pulsed excimer laser, the quantum efficiency and dark current of the JPL/Alacron camera remained stable to better than 1% precision during long-term exposure to several billion laser pulses, with no measurable degradation, no blooming and no image memory at 1000 fps.
Benefits of ALD for NASA instruments and applications: a) Ultrathin, highly conformal, and uniform films over arbitrarily large surface area. b). High quality films (density, roughness, conductivity, etc.) . Angstrom level control of stoichiometry, interfaces, and surface properties: 1) Multilayer nanolaminates/nanocomposites. 2) Low temperature surface engineering. Flight applications enabled by ALD: a) Anti-reflective coatings/Mirrors/Filters/Optics for UV/Vis/NIR Detectors. b) Superconducting Films for Submillimeter Astronomy.
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