Engineering topics
Publications and source records attributed to Dickens, L. E..
The results of the initial implementation of the proposed design, the design modifications, and limitations are presented. Also included are data on component parts of the breadboard amplifier and the converter.
Oscillator consisting of Gunn diode embedded in coaxial circuit has excellent temperature stability and low fabrication costs as compared with automatic-frequency-control crystal oscillators.
Fabrication process and aluminum/GaAs (gallium arsenide) coupling are used to produce Schottky diodes that have high cutoff frequencies and can withstand operating temperatures in excess of 500 C.
Amplifier, fabricated on single dielectric substrate, has pair of Schottky barrier varactor diodes mounted on single semiconductor chip. Circuit includes microstrip transmission line and slot line section to conduct signals. Main features of amplifier are reduced noise output and low production cost.
Development of varactor diode assembly overcomes parasitic reactances of conventional varactor packages. In specially constructed assembly very high idler-frequency to signal-frequency ratios are used to obtain low-noise operation over maximum bandwidth.
A negative resistance parametric amplifier is reported that employs a discrete varactor diode for high frequency pump excitation in the millimeter wave range.
The mixer consists of a small metallic wafer, in which are embedded the semiconductor diodes, the waveguide mount is used to couple the diode wafer to the signal circuit, an RF tuning element, and a 3 mm coaxial connector for the IF output terminal. The cross-sectional dimension is that of the waveguide flange (19 mm x 19 mm, 0.75" x 0.75"), the overall length is nominally 25 mm (1.0 inch). This component is to be used as a single-ended RF mixer with four replacement mixer diodes, operating in the three millimeter wavelength band.
GaAs Schottky barrier varactors with a cutoff frequency of 800 GHz are used in a balanced diode-type parametric amplifier operating with a signal frequency at 7.5 GHz. The room-temperature parameters of the amplifier are a gain of 15 dB, a bandwidth of 500 MHz, and an excess noise temperature of 63 K (a noise figure of 0.86 dB).
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Field equations for spreading resistance of variable capacitance diode and point contact variable resistance diode derived in terms of frequency, material characteristics and physical parameters
Point contact electrically formed semiconductor junction diodes, discussing harmonic generation by various material combinations
All solid-state superheterodyne Dicke radiometer for submillimeter wavelengths
Tunnel diode fabrication techniques and circuits for millimeter wave receivers
Spreading resistance as function of geometry and frequency in semiconductor diodes