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Deng, Xiaowei

Publications and source records attributed to Deng, Xiaowei.

Low-loss interconnects for modular superconducting quantum processors

Low-loss superconducting aluminium cables and on-chip impedance transformers can be used to link qubit modules and create superconducting quantum computing networks with high-fidelity intermodule state transfer. Scaling is now a key challenge in superconducting quantum computing. One solution is to build modular systems in which smaller-scale quantum modules are individually constructed and calibrated and then assembled into a larger architecture. This, however, requires the development of suitable interconnects. Here we report low-loss interconnects based on pure aluminium coaxial cables and on-chip impedance transformers featuring quality factors of up to 8.1 x 10 5 , which is comparable with the performance of our transmon qubits fabricated on a single-crystal sapphire substrate. We use these interconnects to link five quantum modules with intermodule quantum state transfer and Bell state fidelities of up to 99%. To benchmark the overall performance of the processor, we create maximally entangled, multiqubit Greenberger-Horne-Zeilinger states. The generated intermodule four-qubit Greenberger-Horne-Zeilinger state exhibits 92.0% fidelity. We also entangle up to 12 qubits in a Greenberger-Horne-Zeilinger state with 55.8 ± 1.8% fidelity, which is above the genuine multipartite entanglement threshold of 1/2.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Heavy Ion Testing at the Galactic Cosmic Ray Energy Peak

A 1 GeV/u 5 6Fe ion beam allows for true 90deg tilt irradiations of various microelectronic c-0mponents and reveals relevant upset trends at the GCR Hux energy peak. Three SRAMs and an SRAM-based FPGA evaluated at the NASA Space Radiation Effects Laboratory demonstrate that a 90deg tilt irradiation yields a unique device response. These tilt angle effects need t-0 be screened for, and if found, pursued with radiation transport simulations to quantify their impact on event rate calculations.

Pellish, Jonathan A.↗

Device-Orientation Effects on Multiple-Bit Upset in 65-nm SRAMs

Heavy ion irradiations have been performed: a) SEU varies little with angle of ion incidence b) MBU depend on the device orientation. The MBU response depends on the well orientation of the device. MRED simulation of an omni-directional GEO environment shows the MBU response to be a combination of response from different orientations. Testing and simulation must account for multiple orientations.

Tipton, Alan D.↗