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DeVoe, R.

Publications and source records attributed to DeVoe, R..

20 records · Page 2

Measurement of the Spectral Shape of the $β$-Decay of 137 Xe to the Ground State of 137 Cs in EXO-200 and Comparison with Theory

Herein we report on a comparison between the theoretically predicted and experimentally measured spectra of the first-forbidden nonunique $β$-decay transition 137 Xe ( 7/2 - ) → 137 Cs ( 7/2 + ) . The experimental data were acquired by the EXO-200 experiment during a deployment of an AmBe neutron source. The ultralow background environment of EXO-200, together with dedicated source deployment and analysis procedures, allowed for collection of a pure sample of the decays, with an estimated signal to background ratio of more than 99 to 1 in the energy range from 1075 to 4175 keV. In addition to providing a rare and accurate measurement of the first-forbidden nonunique $β$-decay shape, this work constitutes a novel test of the calculated electron spectral shapes in the context of the reactor antineutrino anomaly and spectral bump.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Reflectivity and PDE of VUV4 Hamamatsu SiPMs in liquid xenon

Considering reflective properties of materials and photodetection efficiency (PDE) of photodetectors is important for optimizing energy resolution and sensitivity of the next generation neutrinoless double beta decay, direct detection dark matter, and neutrino oscillation experiments that will use noble liquid gases, such as nEXO, DARWIN, DarkSide-20k, and DUNE . Little information is currently available about reflectivity and PDE in liquid noble gases, because such measurements are difficult to conduct in a cryogenic environment and at short enough wavelengths. Here we report a measurement of specular reflectivity and relative PDE of Hamamatsu VUV4 silicon photomultipliers (SiPMs) with 50 μ m micro-cells conducted with xenon scintillation light ( ~ 175 nm) in liquid xenon. The specular reflectivity at 15 o incidence of three samples of VUV4 SiPMs is found to be 30.4 ± 1.4%, 28.6 ± 1.3%, and 28.0 ± 1.3%, respectively. The PDE at normal incidence differs by ± 8% (standard deviation) among the three devices. The angular dependence of the reflectivity and PDE was further measured for one of the SiPMs. Both the reflectivity and PDE decrease as the angle of incidence increases. This is the first measurement of an angular dependence of PDE and reflectivity of a SiPM in liquid xenon.

47 OTHER INSTRUMENTATION↗