Engineering topics
Publications and source records attributed to Cricchi, J. R..
Memory, with limited number of programming cycles, is achieved by using verticle, fusible links in series with oxide breakthrough elements. Memory elements are fabricated with integrated circuit technology and are ideal for low power digital computer application.
Bidirectional MOS driver, integrated with diode matrix reduces fuse read current to only that of junction leakage and transient MOS gate charging current. No current, except junction leakage current, flows in unaddressed cells. Current required to drive MOS gate flows through unfused branch only during read mode.
Integrated, metal oxide semiconductor memories with nonvolatile and electrically programmable characteristics
MOS transistor structures with enhancement mode of operation, discussing fabrication processes via V-C characteristics, temperature effects on performance, etc
Simultaneous fabrication of enhancement mode metal oxide semiconductor transistors in epitaxial material