The Role of Bipolar Amplification in the SET Response of Tuned RF Amplifiers Using SOI CMOS.
Abstract not provided.
Teng, Jeffrey W↗
Engineering topics
Cressler, John D.
Publications and source records attributed to Cressler, John D..
Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation
Here, integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO 2 ) and 14-MeV fast neutrons up to a fluence of 2.2×10 13 cm -2 . Changes in both DC leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dose is shown to be suppressed by non-quasi-static effects during RF operation. Tolerance to displacement damage from fast neutrons is also observed, which is explained using TCAD simulations. Overall, the characterized pin diodes are tolerant to cumulative radiation at levels consistent with space applications such as geosynchronous weather satellites.
42 ENGINEERING↗
Response of Waveguide-Integrated Germanium-on-Silicon p-i-n Photodiodes to Neutron Displacement Damage
The effects of 14-MeV neutron displacement damage (DD) on waveguide-integrated germanium-on-silicon p-i-n photodiodes (PDs) for silicon photonics have been investigated up to fluences of 7.5×1012 n/cm2 (14 MeV), or 1.4×1013 n1-MeVeq/cm2(Si). The study includes measurements of dark current-voltage characteristics across temperature from 150-375 K, measurements of PD junction capacitance, spectral response measurements from 1260 nm to 1360 nm, and frequency response measurements. The devices are found to be susceptible to DD-induced carrier removal effects; however, they also continue to operate without meaningful impact to performance for the DD dose levels examined. Since the PD test chips include silicon photonic integrated grating couplers and waveguides which carry the optical signal to the PD, some assessment of the impact of DD on these passive devices can also be inferred. Finally, this work does not examine the short-term annealing or transient behavior of the DD, and instead has only considered the lasting damage that remains after any initial period of room temperature annealing.
42 ENGINEERING↗
Advanced Avionics and Processor Systems for a Flexible Space Exploration Architecture
The Advanced Avionics and Processor Systems (AAPS) project, formerly known as the Radiation Hardened Electronics for Space Environments (RHESE) project, endeavors to develop advanced avionic and processor technologies anticipated to be used by NASA s currently evolving space exploration architectures. The AAPS project is a part of the Exploration Technology Development Program, which funds an entire suite of technologies that are aimed at enabling NASA s ability to explore beyond low earth orbit. NASA s Marshall Space Flight Center (MSFC) manages the AAPS project. AAPS uses a broad-scoped approach to developing avionic and processor systems. Investment areas include advanced electronic designs and technologies capable of providing environmental hardness, reconfigurable computing techniques, software tools for radiation effects assessment, and radiation environment modeling tools. Near-term emphasis within the multiple AAPS tasks focuses on developing prototype components using semiconductor processes and materials (such as Silicon-Germanium (SiGe)) to enhance a device s tolerance to radiation events and low temperature environments. As the SiGe technology will culminate in a delivered prototype this fiscal year, the project emphasis shifts its focus to developing low-power, high efficiency total processor hardening techniques. In addition to processor development, the project endeavors to demonstrate techniques applicable to reconfigurable computing and partially reconfigurable Field Programmable Gate Arrays (FPGAs). This capability enables avionic architectures the ability to develop FPGA-based, radiation tolerant processor boards that can serve in multiple physical locations throughout the spacecraft and perform multiple functions during the course of the mission. The individual tasks that comprise AAPS are diverse, yet united in the common endeavor to develop electronics capable of operating within the harsh environment of space. Specifically, the AAPS tasks for the Federal fiscal year of 2010 are: Silicon-Germanium (SiGe) Integrated Electronics for Extreme Environments, Modeling of Radiation Effects on Electronics, Radiation Hardened High Performance Processors (HPP), and and Reconfigurable Computing.
Keys, Andrew S.↗
New Particle-Induced Single Event Latchup Mechanism Observed in a Cryogenic CMOS Readout Integrated Circuit
No abstract available
Marshall, Cheryl J.↗
Advanced Avionics and Processor Systems for Space and Lunar Exploration
NASA's newly named Advanced Avionics and Processor Systems (AAPS) project, formerly known as the Radiation Hardened Electronics for Space Environments (RHESE) project, endeavors to mature and develop the avionic and processor technologies required to fulfill NASA's goals for future space and lunar exploration. Over the past year, multiple advancements have been made within each of the individual AAPS technology development tasks that will facilitate the success of the Constellation program elements. This paper provides a brief review of the project's recent technology advancements, discusses their application to Constellation projects, and addresses the project's plans for the coming year.
Keys, Andrew S.↗
Heavy Ion Current Transients in SiGe HBTs
Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.
Pellish, Jonathan A.↗
Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs
SiGe HBT heavy ion-induced current transients are measured using Sandia National Laboratories microbeam and high- and low-energy broadbeam sources at the Grand Accelerateur National d'Ions Lourds and the University of Jyvaskyla. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET.
Pellish, Jonathan A.↗
A Review of NASA's Radiation-Hardened Electronics for Space Environments Project
NASA's Radiation Hardened Electronics for Space Exploration (RHESE) project develops the advanced technologies required to produce radiation hardened electronics, processors, and devices in support of the requirements of NASA's Constellation program. Over the past year, multiple advancements have been made within each of the RHESE technology development tasks that will facilitate the success of the Constellation program elements. This paper provides a brief review of these advancements, discusses their application to Constellation projects, and addresses the plans for the coming year.
Keys, Andrew S.↗
Radiation-Hardened Electronics for Space Environments (RHESE)
This conference poster explores NASA's Radiation-Hardened Electronics for Space Environments project. This project aims to advance the state of the art in high performance, radiation-hardened electronics that enable the long-term, reliable operation of a spacecraft in extreme radiation and temperature of space and the lunar surface.
Keys, Andrew S.↗
Exploration Technology Developments Program's Radiation Hardened Electronics for Space Environments (RHESE) Project Overview
Primary Objective: 1) A computational tool to accurately predict electronics performance in the presence of space radiation in support of spacecraft design: a) Total dose; b) Single Event Effects; and c) Mean Time Between Failure. (Developed as successor to CR ME96.) Secondary Objectives: 2) To provide a detailed description of the natural radiation environment in support of radiation health and instrument design: a) In deep space; b) Inside the magnetosphere; and c) Behind shielding.
Keys, Andrew S.↗
High-Performance, Radiation-Hardened Electronics for Space and Lunar Environments
The Radiation Hardened Electronics for Space Environments (RHESE) project develops advanced technologies needed for high performance electronic devices that will be capable of operating within the demanding radiation and thermal extremes of the space, lunar, and Martian environment. The technologies developed under this project enhance and enable avionics within multiple mission elements of NASA's Vision for Space Exploration. including the Constellation program's Orion Crew Exploration Vehicle. the Lunar Lander project, Lunar Outpost elements, and Extra Vehicular Activity (EVA) elements. This paper provides an overview of the RHESE project and its multiple task tasks, their technical approaches, and their targeted benefits as applied to NASA missions.
Keys, Andrew S.↗
Radiation Hardened Electronics for Space Environments (RHESE)
Radiation Environmental Modeling is crucial to proper predictive modeling and electronic response to the radiation environment. When compared to on-orbit data, CREME96 has been shown to be inaccurate in predicting the radiation environment. The NEDD bases much of its radiation environment data on CREME96 output. Close coordination and partnership with DoD radiation-hardened efforts will result in leveraged - not duplicated or independently developed - technology capabilities of: a) Radiation-hardened, reconfigurable FPGA-based electronics; and b) High Performance Processors (NOT duplication or independent development).
Keys, Andrew S.↗
Developments in Radiation-Hardened Electronics Applicable to the Vision for Space Exploration
The Radiation Hardened Electronics for Space Exploration (RHESE) project develops the advanced technologies required to produce radiation hardened electronics, processors, and devices in support of the anticipated requirements of NASA's Constellation program. Methods of protecting and hardening electronics against the encountered space environment are discussed. Critical stages of a spaceflight mission that are vulnerable to radiation-induced interruptions or failures are identified. Solutions to mitigating the risk of radiation events are proposed through the infusion of RHESE technology products and deliverables into the Constellation program's spacecraft designs.
Keys, Andrew S.↗
Recent Results on SEU Hardening of SiGe HBT Logic Circuits
A viewgraph presentation on SEU tolerant SiGe HBT technology is shown. The topics include: 1) Introduction; 2) TID and SEU in SiGe Technology; 3) RHBD Techniques; 4) Experiment; 5) Heavy-Ion Data and Analysis; and 6) Summary.
Krithivasan, Ramkumar↗