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Corbett, J. W.

Publications and source records attributed to Corbett, J. W..

14 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Studies of implanted iron in silicon by channeling and Rutherford backscattering

Different amounts of 100-keV iron ions have been implanted into high-resistivity p-type FZ-silicon samples. The implantation damage, recovery of damage during various annealing periods and temperatures, movement of iron atoms under annealing and oxidation, and the kinds of defects created after implantation, annealing, or oxidation are all investigated by channeling and backscattering measurements. It is found that the critical fluence of 100-keV iron implanted into silicon at room temperature is about 2.5 x 10 to the 14th Fe/sq cm, and that iron atoms are gettered by silicon oxidation. In this supersaturated region, iron atoms diffuse slightly towards bulk silicon during high-temperature annealing (greater than or equal to 1100 C) but not at all during low-temperature annealing (less than or equal to 1000 C) in dry nitrogen ambient.

Wang, P. W.↗
NASA NTRS1986

Quenched-in defects in flashlamp-annealed silicon

Deep levels introduced in boron-doped silicon by heat-pulse annealing with a tungsten-halogen flashlamp are investigated using deep-level transient spectroscopy. Two majority-carrier trapping levels in the band gap, at Ev + 0.32 eV and at Ev + 0.45 eV, are observed. These results are compared to those obtained by furnace-quenching and laser-annealing studies. Both the position in the gap and the annealing kinetics of the hole trap at Ev + 0.45 eV suggest that this center is due to an interstitial iron impurity in the lattice. The deep levels are not consistently observed in all flashlamp-annealed Si crystals utilized.

Borenstein, J. T.↗
NASA NTRS1985

Inversion of chalcogen defect levels in silicon - An MNDO study

MNDO (modified neglect of diatomic overlap) calculations have been carried out for substitutional oxygen and sulfur impurities in silicon. The calculations of the gap levels reveal a reversal of trend with atomic ionization energies in agreement with self-consistent Green function results, and analysis of the MNDO charge distribution supports the view that the electronegativity difference between oxygen and sulfur gives rise to this shallower energy level.

Singh, R. K.↗
NASA NTRS1985

Growth of the 889 per cm infrared band in annealed electron-irradiated silicon

Isothermal annealing of electron-irradiated Czochralski silicon has been studied at four different temperatures ranging from 304 to 350 C using infrared spectroscopy. At annealing temperatures above 300 C the irradiation-induced band at 830 per cm, usually attributed to a vacancy-oxygen complex (the A center), disappears and a new band at 889 per cm grows up. Within the experimental accuracy, the activation energy for the growth of this band is found to be identical with the value given by Stavola et al. for 'anomalous' oxygen diffusion in silicon. Also the frequency factors for the two processes are in reasonable agreement. The results show that a vacancy-assisted process may provide an explanation for enhanced motion of oxygen in silicon.

Svensson, B. G.↗
NASA NTRS1985

Oxygen and carbon in silicon

The properties of the early transistors were determined by the minority-carrier lifetime, as is the silicon photovoltaic solar cell. Most of the devices on the modern integrated circuits are majority carrier devices, in part to avoid this lifetime dependence. The micro-electronics industry typically starts with wafers with a minority-carrier lifetime of 1000 micro-seconds, but during device fabrication this lifetime is reduced to beflow 1 micro-second, in spite of extraordinary cleanliness and precautions. Process-induced defects (PID) include point defects, defect complexes, line defects, and bulk precipitates. One of the aspects that needs to be better understood is the nature of minority carrier recombination at line defects and at precipitates. Some of the PIDs are known to be related to the fast-diffusers of the iron-series transition elements. One of the common techniques of dealing with these elements is intrinsic gettering by the oxygen precipitates. But even in the gettered state, there may be a residual effect on the lifetime. Oxygen is an almost ubiquitous impurity in silicon and plays an important role in both integrated circuits and solar cells. The isolated oxygen interstitial is electrically inactive, but in its various aggregated forms it has a variety of electrical activities. The agglomeration and precipitation of oxygen, including impurity gettering and the complicating role of carbon, is discussed.

Corbett, J. W.↗
NASA NTRS1985

Studies of oxygen-related and carbon-related defects in high-efficiency solar cells

Oxygen and carbon related defects in silicon, particularly as related to high-efficiency silicon solar cells were studied. A summary of oxygen processes in silicon versus process temperature was shown along with experimental results. The anamolous diffusion of oxygen was explained by the dissociation of the center allowing O sub i to move through the lattices.

Corbett, J. W.↗
NASA NTRS1980

Photodegradation in silicon

The state of knowledge concerning the following defects in silicon is briefly surveyed: substitutional impurities; vacancy-related defects; interstitial-related defects; defect pairs. Although a great deal is known, it is argued that not enough is yet known to model radiation damage production in the bulk or in the vicinity of the junction of a solar cell. The results on photon degradation (and enhancement) of solar cells are then reviewed, and it is suggested that defect pairs may be the defects responsible. Mechanisms for photon-induced dissociation of pairs are discussed but a more detailed understanding awaits the identification of the actual defects.

Corbett, J. W.↗
NASA NTRS1980

Modeling of radiation damage in silicon solar cells

One MeV electron irradiation produces preponderantly isolated vacancy interstitial pairs. If neither of these defects is mobile, the concentration of each grows linearly with fluence. Annealing of damage depends on the nature of the damage. Vacancy interstitial pairs which are bound by an interaction such that they mutually annihilate rather than dissociate are termed close pairs; close pair recovery usually occurs at a lower temperature than the temperature at which long distance defect migration occurs. Annealing of the remaining frozen in damage occurs when a temperature is reached where the vacancy or interstitial is mobile; usually the interstitial is more mobile than the vacancy. The recovery occurs in two regimes which may be resoluable.

Oehrlein, G.↗
NASA NTRS1979

High-energy electron-induced damage production at room temperature in aluminum-doped silicon

DLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented.

Corbett, J. W.↗
NASA NTRS1978

Defect distribution near the surface of electron-irradiated silicon

The surface-defect distributions of electron-irradiated n-type silicon have been investigated using a transient capacitance technique. Schottky, p-n junction, and MOS structures were used in profiling the defect distributions. Surface depletions of defects observed were attributed to the vacancy distribution, but not that of oxygen, and other capture centers' distributions. The vacancy diffusion length at 300 K was estimated to be about 3-6 microns.

Wang, K. L.↗
NASA NTRS1977

Effects of defect recombination centers on radiation damage in solar cells

Defect production in silicon is modeled on a computer by solving a large system of rate equations. The model includes the main, known defects that are stable at operating temperatures of solar cells in outer space; most of these defects are secondary and tertiary defects. The preliminary result shows that the presence of defect recombination centers for primary defects (i.e., vacancy and interstitial) can effectively reduce the production rates of those stable defects and, consequentially, improve the lifetime of solar cells operating in radiation environment. The characteristics of the defect recombination center required for better solar cell performance along with prospective candidates are discussed.

Cheng, L. J.↗
NASA NTRS1977

EPR and transient capacitance studies on electron-irradiated silicon solar cells

One and two ohm-cm solar cells irradiated with 1 MeV electrons at 30 C were studied using both EPR and transient capacitance techniques. In 2 ohm-cm cells, Si-G6 and Si-G15 EPR spectra and majority carrier trapping levels at (E sub V + 0.23) eV and (E sub V + 0.38) eV were observed, each of which corresponded to the divacancy and the carbon-oxygen-vacancy complex, respectively. In addition, a boron-associated defect with a minority carrier trapping level at (E sub C -0.27) eV was observed. In 1 ohm-cm cells, the G15 spectrum and majority carrier trap at (E sub V + 0.38) eV were absent and an isotropic EPR line appeared at g = 1.9988 (+ or - 0.0003); additionally, a majority carrier trapping center at (E sub V + 0.32) eV, was found which could be associated with impurity lithium. The formation mechanisms of these defects are discussed according to isochronal annealing data in electron-irradiated p-type silicon.

Lee, Y. H.↗