Recombination luminescence of irradiated silicon.
Semiconducting Si luminescence arising from recombination of holes and electrons at point defects produced by neutron or gamma ray irradiation
Compton, W. D.↗
Engineering topics
Compton, W. D.
Publications and source records attributed to Compton, W. D..
An experimental investigation of radiation effects in semiconductors Semiannual status report, Jul. 1 - Dec. 31, 1967
Recombination luminescence of irradiated silicon, and hole-optical phonon interaction in degenerate silicon
Compton, W. D.↗
An experimental investigation of radiation effects in semiconductors Semiannual status report, 1 Jan. - 30 Jun. 1967
Radiation effects on semiconductors, and recombination lifetimes in gamma-irradiated, boron-doped silicon
RECOMBINATION↗
Research related to an experimental test of general relativity Semiannual status report, 1 Jul. - 31 Dec. 1966
Passive nonmetallic gyroscopic earth satellite for measuring in-plane precession predicted by general relativity
PRECISION↗
Annealing of fast neutron damage in impurity- conducting n-type germanium.
Annealing of fast neutron damage in impurity conducting n-type Ge, noting small activation energy in resistivity below 10 degrees K
ELECTRIC RESISTANCE↗
An experimental investigation of radiation effects in semiconductors Semiannual status report, 1 Jan. - 30 Jun. 1966
Radiation effect on recombination luminescence and tunneling in semiconductors
RADIATION EFFECT↗
Annealing of fast neutron damage in impurity-conducting n-type germanium
Thermal annealing of fast neutron induced changes in electrical properties of highly doped n-type germanium
FAST NEUTRON↗
Annealing of neutron-irradiation-induced changes in impurity conduction in antimony- doped germanium.
Annealing of neutron irradiation induced changes in impurity conduction in Sb-doped Ge
NEUTRON BOMBARDMENT↗
Recombination lifetimes in gamma-irradiated P-type float zone silicon
Electron decay rate and absorption cross sections for electron holes and recombination in gamma irradiated n-type silicon
Compton, W. D.↗
Recombination luminescence in N-type Czochralski silicon
Recombination luminescence in Czochralski silicon
Compton, W. D.↗
Compensation dependence of impurity conduction in antimony-doped germanium.
Compensation dependence of impurity conduction in n-type germanium containing antimony atoms
GERMANIUM↗
An experimental investigation of radiation effects in semiconductors Semiannual status report, Jul. 1 - Dec. 31, 1965
Radiation effects in semiconductors - carrier lifetimes in irradiated materials, recombination luminescence, and thermal stability of irradiation induced defects
LUMINESCENCE↗
Annealing of Neutron-irradiation-induced Changes in Impurity Conduction in Antimony- Doped Germanium
Annealing of neutron-irradiation-induced changes in impurity conduction in antimony-doped germanium
DOPING↗
An experimental investigation of radiation effects in semiconductors semiannual status report, 1 jul. - 31 dec. 1964
Effects of fast electron irradiation on silicon semiconductors
FAST ELECTRON↗
An experimental investigation of radiation effects in semiconductors Semiannual status report, Jul. 1 - Dec. 31, 1963
Production mechanisms of radiation induced defects in semiconductors
CRYSTAL STRUCTURE DEFECT↗