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Claspy, P. C.

Publications and source records attributed to Claspy, P. C..

At least 19 records

Optoelectronic Control Of Phased-Array Antenna

Radiation patterns switched within microseconds. According to concept, digital beam-steering information destined for number of phased antenna elements transmitted in serial multiplex along optical fiber to optoelectronic integrated circuit (OEIC), demultiplexing information into parallel electronic channels to phase shifters associated with various elements. Because of small distances between elements of such arrays, compactness of optical fibers makes them attractive for distribution of beam-steering (phase-shifting) control signals. Also offers advantages of light weight, low attenuation, mechanical flexibility, large bandwidth, and immunity to both crosstalk and electromagnetic interference.

Bhasin, K. B.↗

An analysis of the frequency limitations of an Al(x)Ga(1-x)As/GaAs optical modulator

An analysis is made of the frequency response of an Al(x)Ga(1-x)As/GaAs optical modulator operating at a wavelength of 0.83 micron and utilizing the linear-optic effect in a Mach-Zehnder configuration. It is shown that, in semiconductor modulators, electroabsorption should be taken into account in optimizing the frequency response of the device. It is also shown that, by incorporating an insulator (a semiconductor with a large band gap) between the metallic electrode and the channel, the capacitance of the electroabsorptive modulator can be kept low at a reasonable value under the worst conditions.

Tabib-Azar, M.↗

Measurement techniques for cryogenic Ka-band microstrip antennas

The measurement of cryogenic antennas poses unique logistical problems since the antenna under test must be embedded in the cooling chamber. A method for measuring the performance of cryogenic microstrip antennas using a closed cycle gas-cooled refrigerator in a far field range is described. Antenna patterns showing the performance of gold and superconducting Ka-band microstrip antennas at various temperatures are presented.

Richard, M. A.↗

Performance of a wideband GaAs low-noise amplifier at cryogenic temperatures

The gain and noise figure performance of a GaAs amplifier at cryogenic temperatures has been studied. Results obtained indicate that a lower noise figure and a higher gain are induced by decreasing the temperature, while no significant change in the input 1-dB compression point is observed. Repeated temperature cycling had no adverse effect on the amplifier performance.

Toncich, S. S.↗

Performance of a K-band superconducting annular ring antenna

Superconducting annular ring antennas operating in the TM12 mode at 21 GHz are designed and fabricated on a lanthanum aluminate substrate using a YBCO high-temperature superconducting thin film. The efficiencies and far-field antenna patterns are measured and compared with an identical antenna patterned with silver. The resonant frequencies and experimental far-field patterns agree well with published models, and efficiency measurements show a maximum improvement of 6 percent at 20 K in the efficiency of the HTS antenna when compared to the silver ring at the same temperature.

Richard, M. A.↗

Performance of a four-element Ka-band high-temperature superconducting microstrip antenna

Superconducting four-element microstrip array antennas operating at 30 GHz have been designed and fabricated on a lanthanum aluminate (LaAlO3) substrates. The experimental performance of these thin film Y-Ba-Cu-O superconducting antennas is compared with that of identical antenna patterned with evaporated gold. Efficiency measurements of these antennas show an improvement of 2 dB at 70 K and as much as 3.5 dB at 40 K in the superconducting antenna over the gold antenna.

Richard, M. A.↗

Measurement techniques for cryogenic Ka-band microstrip antennas

The measurement of cryogenic antennas poses unique logistical problems since the antenna under test must be embedded in a cooling chamber. A method of measuring the performance of cryogenic microstrip antennas using a closed cycle gas cooled refrigerator in a far field range is described. Antenna patterns showing the performance of gold and superconducting Ka-band microstrip antennas at various temperatures are presented.

Richard, M. A.↗

Control of a GaAs monolithic Ka-band phase shifter using a high-speed optical interconnect

The use of a high-speed optical interconnect in the control of a Ka-band GaAs monolithic phase shifter is described. A 16-b serial control signal was used to modulate the output of a laser transmitter, and the transmitted optical signal was detected and demultiplexed into 16 parallel electrical outputs using a high-speed hybrid GaAs optoelectronic integrated circuit. Four of the parallel output lines were interfaced to the 4-b phase shifter, and high-speed, optically controlled switching of the phase shifter was observed at clock frequencies to 30 MHz using an interferometric technique.

Bhasin, K. B.↗

Performance of a 300 Mbps 1:16 serial/parallel optoelectronic receiver module

Optical interconnects are being considered for the high speed distribution of multiplexed control signals in GaAs monolithic microwave integrated circuit (MMIC) based phased array antennas. The performance of a hybrid GaAs optoelectronic integrated circuit (OEIC) is described, as well as its design and fabrication. The OEIC converts a 16-bit serial optical input to a 16 parallel line electrical output using an on-board 1:16 demultiplexer and operates at data rates as high as 30b Mbps. The performance characteristics and potential applications of the device are presented.

Richard, M. A.↗

Optical control of an 8-element Ka-band phased array using a high-speed optoelectronic interconnect

Optical distribution of control signals in electronically steered phased array antennas is being considered. A demonstration experiment is described in which a high speed hybrid GaAs optoelectronic integrated circuit (OEIC) was used to control an eight element phased array antenna. The OEIC, which accepts a serial optical control signal as input and converts it to 16 demultiplexed parallel outputs, was used to control the monolithic GaAs phase shifters of a Ka-band patch panel array antenna. Antenna pattern switching speeds of 2.25 microsec, limited by interface circuitry, were observed.

Richard, M. A.↗

Performance of a 300 Mbps 1:16 serial/parallel optoelectronic receiver module

Optical interconnects are being considered for the high speed distribution of multiplexed control signals in GaAs MMIC-based phased array antennas. This paper describes the performance of a hybrid GaAs optoelectronic integrated circuit (OEIC), along with a description of its design and fabrication. The OEIC converts a 16-bit serial optical input to a 16 parallel line electrical output using an on-board 1:16 demultiplexer and operates at data rates as high as 305 Mbps. The performance characteristics as well as potential applications of the device are presented.

Richard, M. A.↗

A high-speed GaAs MESFET optical controller

Optical interconnects are being considered for control signal distribution in phased array antennas. A packaged hybrid GaAs optical controller with a 1:16 demultiplexed output that is suitable for this application is described. The controller, which was fabricated using enhancement/depletion mode MESFET technology, operates at demultiplexer-limited input data rates up to 305 Mb/s and requires less than 200 microW optical input power.

Claspy, P. C.↗

Optical detectors for GaAs MMIC integration: Technology assessment

Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.

Claspy, P. C.↗

High frequency GaAlAs modulator and photodetector for phased array antenna applications

A waveguide Mach-Zehnder electro-optic modulator and an interdigitated photoconductive detector designed to operate at 820 nm, fabricated on different GaAlAs/GaAs heterostructure materials, are being investigated for use in optical interconnects in phased array antenna systems. Measured optical attenuation effects in the modulator are discussed and the observed modulation performance up to 1 GHz is presented. Measurements of detector frequency response are described and results presented.

Claspy, P. C.↗

Microwave response of a HEMT photoconductive detector

Interdigitated photoconductive detectors with 5-micron geometry have been fabricated on HEMT material and their optical response characteristics at 820 nm have been examined at dc and in the frequency range of 2-8 GHz. These have been compared with characteristics of similar 1-micron devices on MESFET material. The shapes of the frequency responses were found to differ, but the useful bandwidth of both types of devices was found to be similar.

Claspy, P. C.↗

Optical detectors for GaAs MMIC integration - Technology assessment

Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.

Claspy, P. C.↗

High frequency GaAlAs modulator and photodetector for phased array antenna applications

A waveguide Mach-Zehnder electro-optic modulator and an interdigitated photoconductive detector designed to operate at 820 nm, fabricated on different GaAlAs/GaAs heterostructure materials, are being investigated for use in optical interconnects in phased array antenna systems. Measured optical attenuation effects in the modulator are discussed and the observed modulation performance up to 1 GHz is presented. Measurements of detector frequency response are described and results presented.

Claspy, P. C.↗

Microwave response of an HEMT photoconductor

Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these devices have been examined at both dc and microwave frequencies. The microwave response, at frequencies to 8 GHz, was studied by illuminating the devices with the output of an internally modulated GaAlAs diode laser. Results of these measurements are presented and compared with that of GaAs photoconductors.

Claspy, P. C.↗