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Chu, C. K.

Publications and source records attributed to Chu, C. K..

9 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Solitons induced by boundary conditions from the Boussinesq equation

The behavior of solitons induced by boundary excitation is investigated at various time-dependent conditions and different unperturbed water depths, using the Korteweg-de Vries (KdV) equation. Then, solitons induced from Boussinesq equations under similar conditions were studied, making it possible to remove the restriction in the KdV equation and to treat soliton head-on collisions (as well as overtaking collisions) and reflections. It is found that the results obtained from the KdV and the Boussinesq equations are in good agreement.

Chou, Ru Ling↗
NASA NTRS1983

Intrinsic adaptive mesh techniques

An alternating direction adaptive grid movement code was developed and a thesis adaptive angular meshes was directed. The alternating direction code was also established on the NASA Langley computer system and is available for use there. In essence, grid points are moved on an abstract surface above physical space by means of alternating coordinate directions. The abstract surface is formed with the salient solution properties if they can be extracted by a priori physical reasoning; or otherwise, in the absence of such reasoning, by the use of error estimates in some chosen norm. Upon formulation, all important driving properties for adaptive purposes are consolidated into one object - the abstract surface. At a basic level, a uniform distribution of surface points is equivalent to gradient resolution. This arises from a projection back down into physical space. At a higher level, a more accurate view of the abstract surface is obtained when changes in surface direction are also resolved. The appropriate measure for direction changes is normal curvature. It is defined as the rate of change of surface tangent planes as a surface coordinate curve is transversed in uniform increments of arc length.

Eiseman, P. R.↗
NASA NTRS1979

Development and fabrication of improved power transistor switches

A new class of high-voltage power transistors was achieved by adapting present interdigitated thyristor processing techniques to the fabrication of npn Si transistors. Present devices are 2.3 cm in diameter and have V sub CEO (sus) in the range of 400 to 600V. V sub CEO (sus) = 450V devices were made with an (h sub FE)(I sub C) product of 900A at V sub CE = 2.5V. The electrical performance obtained was consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The device design, wafer processing, and assembly techniques are described. Experimental measurements of the dc characteristics, forward SOA, and switching times are included. A new method of characterizing the switching performance of power transistors is proposed.

Hower, P. L.↗
NASA NTRS1976

Development and fabrication of improved power transistor switches

A new class of high-voltage power transistors has been achieved by adapting present interdigitated thyristor processing techniques to the fabrication of NPN Si transistors. Present devices are 2.3 cm in diameter. The electrical performance obtained is consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The forward safe operating area of the experimental transistors shows a significant improvement over commercially available devices. The report describes device design, wafer processing, and various measurements which include dc characteristics, forward and reverse second breakdown limits, and switching times.

Hower, P. L.↗
NASA NTRS1966

On the structure of Alfven shocks.

Alfven shocks for flow of highly conducting incompressible fluid over blunt body where magnetic and flow vectors are not aligned

INCOMPRESSIBLE FLUID↗