Engineering topics

Christou, A.

Publications and source records attributed to Christou, A..

4 records

NASA NTRS2016

Martian Atmospheric Methane Plumes from Meteor Shower Infall: A Hypothesis

Methane plumes in the martian atmosphere have been detected using Earth-based spectroscopy, the Planetary Fourier Spectrometer on the ESA Mars Express mission, and the NASA Mars Science Laboratory. The methane's origin remains a mystery, with proposed sources including volcanism, exogenous sources like impacts and interplanetary dust, aqueous alteration of olivine in the presence of carbonaceous material, release from ancient deposits of methane clathrates, and/or biological activity. To date, none of these phenomena have been found to reliably correlate with the detection of methane plumes. An additional source exists, however: meteor showers could generate martian methane via UV pyrolysis of carbon-rich infall material. We find a correlation between the dates of Mars/cometary orbit encounters and detections of methane on Mars. We hypothesize that cometary debris falls onto Mars during these interactions, depositing freshly disaggregated meteor shower material in a regional concentration. The material generates methane via UV photolysis, resulting in a localized "plume" of short-lived methane.

Fries, M.↗

NASA NTRS2016

Martian Methane From a Cometary Source: A Hypothesis

In recent years, methane in the martian atmosphere has been detected by Earth-based spectroscopy, the Planetary Fourier Spectrometer on the ESA Mars Express mission, and the NASA Mars Science Laboratory. The methane's origin remains a mystery, with proposed sources including volcanism, exogenous sources like impacts and interplanetary dust, aqueous alteration of olivine in the presence of carbonaceous material, release from ancient deposits of methane clathrates, and/or biological activity. An additional potential source exists: meteor showers from the emission of large comet dust particles could generate martian methane via UV pyrolysis of carbon-rich infall material. We find a correlation between the dates of Mars/cometary orbit encounters and detections of methane on Mars. We hypothesize that cometary debris falls onto Mars during these interactions, generating methane via UV photolysis.

Fries, M.↗

NASA NTRS1981

Assessment of high temperature metallizations for I(2)L and CMOS technologies

High temperature barrier metallizations were assessed and tested for I(2)L and CMOS applications. Life tests were accelerated to 375 C in view of the -55 C to +300 C temperature range established for engine-located electronics without fuel cooling. The gold-refractory metallizations evaluated were Au-TiW-PtSi, Au-TiW/TiO2/TiW-PtSi and Au-TiW(N)-PtSi. These metallization systems were thermally annealed to at least 375 C for up to 250 hours. The critical requirement for stable diffusion barrier is the TiW grain size. Small grain (250A-500A) films were observed to be stable up to 375 C. Deposition to TiW diffusion barrier in the presence of oxygen and nitrogen also results in an effective diffusion barrier. Auger electron spectroscopy profiles of the PtSi indicates some penetration by the TiW. In the case of PtSi/TiW interface, the redistribution of oxygen further passivates the system by forming a TiO2 layer at the interface.

Christou, A.↗

NASA NTRS1981

Ohmic contacts to GaAs for high-temperature device applications

Ohmic contacts to n-type GaAs were developed for high temperature device applications up to 300 C. Refractory metallizations were used with epitaxial Ge layers to form the contacts: TiW/Ge/GaAs, Ta/Ge/GaAs, Mo/Ge/GaAs, and Ni/Ge/GaAs. Contacts with high dose Si or Se ion implantation of the Ge/GaAs interface were also investigated. The contacts were fabricated on epitaxial GaAs layer grown on N+ or semi-insulating GaAs substrates. Ohmic contact was formed by both thermal annealing (at temperatures up to 700 C) and laser annealing (pulsed Ruby). Examination of the Ge/GaAs interface revealed Ge migration into GaAs to form an N+ doping layer. The specific contact resistances of specimens annealed by both methods are given.

Anderson, W. T., Jr.↗