Engineering topics

Chernov, A. A.

Publications and source records attributed to Chernov, A. A..

40 records · Page 3

NASA NTRS1999

Step Bunching: Influence of Impurities and Solution Flow

Step bunching results in striations even at relatively early stages of its development and in inclusions of mother liquor at the later stages. Therefore, eliminating step bunching is crucial for high crystal perfection. At least 5 major effects causing and influencing step bunching are known: (1) Basic morphological instability of stepped interfaces. It is caused by concentration gradient in the solution normal to the face and by the redistribution of solute tangentially to the interface which redistribution enhances occasional perturbations in step density due to various types of noise; (2) Aggravation of the above basic instability by solution flowing tangentially to the face in the same directions as the steps or stabilization of equidistant step train if these flows are antiparallel; (3) Enhanced bunching at supersaturation where step velocity v increases with relative supersaturation s much faster than linear. This v(s) dependence is believed to be associated with impurities. The impurities of which adsorption time is comparable with the time needed to deposit one lattice layer may also be responsible for bunching; (4) Very intensive solution flow stabilizes growing interface even at parallel solution and step flows; (5) Macrosteps were observed to nucleate at crystal corners and edges. Numerical simulation, assuming step-step interactions via surface diffusion also show that step bunching may be induced by random step nucleation at the facet edge and by discontinuity in the step density (a ridge) somewhere in the middle of a face. The corresponding bunching patterns produce the ones observed in experiment. The nature of step bunching generated at the corners and edges and by dislocation step sources, as well as the also relative importance and interrelations between mechanisms 1-5 is not clear, both from experimental and theoretical standpoints. Furthermore, several laws controlling the evolution of existing step bunches have been suggested, though unambiguous conclusions are still missing. Addressing these issues is the major goal of the present project. The theory addressing the above problem, experimental methods, several figures which include: (1) the spatial wave numbers at which the system is neutrally stable as a function of growth velocity for linear kinetics and supersaturation for nonlinear kinetics; (2) a schematic of the experiment of lysozyme crystal growing under conditions of natural convection; (3) fluctuations in time, t, of the normal growth rate, R(t), vicinal slope, p(t) and Fourier Spectra of R(t), discussions and conclusions are presented.

Chernov, A. A.↗

NASA NTRS1998

Crystal growth and crystallography

Selected topics that may be of interest for both crystal-structure and crystal-growth communities are overviewed. The growth of protein crystals, along with that of some other compounds, is one of the topics, and recent insights into related phenomena are considered as examples of applications of general principles. The relationship between crystal growth shape and structure is reviewed and an attempt to introduce semiquantitative characterization of binding for proteins is made. The concept of kinks for complex structures is briefly discussed. Even at sufficiently low supersaturations, the fluctuation of steps may not be sufficient to implement the Gibbs-Thomson law if the kink density is low enough. Subsurface ordering of liquids and growth of rough interfaces from melts is discussed. Crystals growing in microgravity from solution should be more perfect if they preferentially trap stress-inducing impurities, thus creating an impurity-depleted zone around themselves. Evidently, such a zone is developed only around the crystals growing in the absence of convection. Under terrestrial conditions, the self-purified depleted zone is destroyed by convection, the crystal traps more impurity and grows stressed. The stress relief causes mosaicity. In systems containing stress-inducing but poorly trapped impurities, the crystals grown in the absence of convection should be worse than those of their terrestrial counterparts.

Review, Tutorial↗

NASA NTRS1996

Interface Morphology During Crystal Growth: Effects of Anisotropy and Fluid Flow

The effect of a parallel shear flow and anisotropic interface kinetics on the onset of instability during growth from a supersaturated solution is analyzed. The model used for anisotropy is based on the microscopic picture of step motion. A shear flow (linear Couette flow or asymptotic suction profile) parallel to the crystal solution interface in the same direction as the step motion decreases interface stability. A shear flow counter to the step motion enhances stability and for sufficiently large shear rates the interface is absolutely morphologically stable. For large wave numbers, the perturbed flow field can be neglected and a simple analytic approximation for the stability-instability demarcation is found.

Coriell, S. R.↗

NASA NTRS1994

Convection and morphological stability during directional solidification

For growth of a vicinal face at constant velocity, the effect of anisotropic interface kinetics on morphological stability is calculated for a binary alloy. The dependence of the interface kinetic coefficient on crystallographic orientation is based on the motion and density of steps. Anisotropic kinetics give rise to traveling waves along the crystal-melt interface, and can lead to a significant enhancement of morphological stability. The stability enhancement increases as the orientation approaches a singular orientation and as the solidification velocity increases. Shear flows interact with the traveling waves and, depending on the direction of the flow, may either stabilize or destabilize the interface. Specific calculations are carried out for germanium-silicon alloys.

Coriell, Sam R.↗