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Cheng, L. J.

Publications and source records attributed to Cheng, L. J..

30 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Surface recombination velocity measurement for silicon solar cells

For the design and fabrication of silicon solar cells approaching theoretical ultimate conversion efficiencies, surface recombination velocity plays a crucial role. A technique using a scanning electron microscope with pulsed electron beam has been developed for thy measurement of this important parameter for silicon surfaces. It is shown that the surface recombination velocity(s) increases by an order of magnitude when a freshly etched sample is left out for a few hours, presumably due to generation of surface states. A textured front surface field (FSF) cell with a high-low junction near the surface shows the effect of minority carrier reflection and an apparent reduction of s, whereas a tandem junction (TJ) cell with n+-p junction near the surface gives larger s value.

Daud, T.↗
NASA NTRS1980

The effects of titanium impurities in N/+//P silicon solar cells

Microscopic and electrical measurements were performed to explain the degradation mechanisms associated with the presence of titanium impurities in silicon. The measurements included X-ray topography, transmission electron microscopy, and deep level transient spectroscopy, before and after processing. The results indicated the presence of TiO2 precipitates, the density of which increased after phosphorus diffusion. A majority carrier trapping level was observed in the wafers before processing. It was concluded that 10% of the Ti in the N(+)/P silicon solar cells formed electrically active centers which caused degradation of the cell junction. 14% of the remaining Ti precipitated out as TiO2, forming electrically active defects, which also caused junction degradation.

Salama, A. M.↗
NASA NTRS1980

Behavior of interdigitated back-contact solar cells

This paper presents experimental data concerning operation mechanisms of two versions of interdigitated back-contact solar cells: the tandem junction cell and the front-surface field cell. It is shown that a photogenerated forward bias at the front junction of a tandem junction cell is a critical parameter for cell performance which not only causes photogenerated carriers to migrate to the back junction, but also eliminates the reduction in photoresponse over back p(+) metallization regions. However, no similar light effects are observed in the performance of front-surface field cells. Finally, a discussion on mechanisms concerning the performance of front-surface field and tandem junction cells along with their merits is given.

Cheng, L. J.↗
NASA NTRS1979

High-energy electron-induced damage production at room temperature in aluminum-doped silicon

DLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented.

Corbett, J. W.↗
NASA NTRS1978

Mechanisms of photon-induced changes in silicon solar cell parameters

Reversible changes in solar cell performance were induced by AM1 illumination and evaluated by measuring short-circuit current, weak light spectral response, and minority carrier diffusion length. In n(+)p cells the change manifests itself as a reduced short-circuit current, a loss of the red response, and a reduction in minority carrier diffusion length. In p(+)n cells there are two-photon induced effects: (1) enhancement of the blue spectral response, presumably occurring in the p(+) layer and (2) degradation in open-circuit voltage at low light levels due to increased leakage occurring only after the junction edge is exposed to bright light. Most of these photon effects are attributed to defects in the silicon.

Cheng, L. J.↗
NASA NTRS1977

Effects of defect recombination centers on radiation damage in solar cells

Defect production in silicon is modeled on a computer by solving a large system of rate equations. The model includes the main, known defects that are stable at operating temperatures of solar cells in outer space; most of these defects are secondary and tertiary defects. The preliminary result shows that the presence of defect recombination centers for primary defects (i.e., vacancy and interstitial) can effectively reduce the production rates of those stable defects and, consequentially, improve the lifetime of solar cells operating in radiation environment. The characteristics of the defect recombination center required for better solar cell performance along with prospective candidates are discussed.

Cheng, L. J.↗
NASA NTRS1977

EPR and transient capacitance studies on electron-irradiated silicon solar cells

One and two ohm-cm solar cells irradiated with 1 MeV electrons at 30 C were studied using both EPR and transient capacitance techniques. In 2 ohm-cm cells, Si-G6 and Si-G15 EPR spectra and majority carrier trapping levels at (E sub V + 0.23) eV and (E sub V + 0.38) eV were observed, each of which corresponded to the divacancy and the carbon-oxygen-vacancy complex, respectively. In addition, a boron-associated defect with a minority carrier trapping level at (E sub C -0.27) eV was observed. In 1 ohm-cm cells, the G15 spectrum and majority carrier trap at (E sub V + 0.38) eV were absent and an isotropic EPR line appeared at g = 1.9988 (+ or - 0.0003); additionally, a majority carrier trapping center at (E sub V + 0.32) eV, was found which could be associated with impurity lithium. The formation mechanisms of these defects are discussed according to isochronal annealing data in electron-irradiated p-type silicon.

Lee, Y. H.↗