Engineering topics
Publications and source records attributed to Cheng, Emily.
In accordance with one aspect of the presently disclosed inventive concepts, a product includes a porous three-dimensional (3D) printed polymer structure having elastomeric shape memory, where the structure includes a material comprising a plurality of gas-filled microballoons. The 3D printed polymer structure has hierarchical porosity.
Molybdenum oxides and sulfides are alternative catalysts for several reactions, including alkane dehydrogenation. Correlations have been developed between reactivity and structure, but it is difficult to compare different catalysts without determining numbers of active sites. Here, methanol temperature programmed surface reaction (TPSR) is applied to bulk MoS 2 and a series of supported molybdenum oxides and sulfides used for isobutane dehydrogenation. Rates and deactivation behavior are similar between supported molybdenum oxides and sulfides. Coking increases with loading and correlates well with the fraction of Mo-based CO 2 -forming sites from methanol TPSR. Normalizing isobutane dehydrogenation rates by formaldehyde-forming sites unifies rates over oxide and sulfide materials. Further, these measurements confirm earlier hypotheses that MoS 2 and higher loadings of oxides and sulfides are intrinsically fast catalysts, but they have few active sites and are prone to coking. In general, methanol TPSR is proposed as an accessible route to count sites on both supported oxides and sulfides.
Some catalytic oxide supports are more equal than others, with numerous variable properties ranging from crystal symmetry to surface chemistry and electronic structure. As a consequence, it is often very difficult to determine which of these act as the driver of performance changes observed in catalysis. In this work, we hold many of these variable properties constant with structurally similar LnScO 3 (Ln = La, Sm, and Nd) nanoparticle supports with cuboidal shapes and a common Sc-rich surface termination. Using CO oxidation over supported Au nanoparticles as a probe reaction, we observe higher activation energy and a slower rate using NdScO 3 as the support material. This change is found to correlate to the strength of CO 2 binding to the support surface, identified by temperature-programmed desorption measurements. Furthermore, the change is due to differences in the 4f electrons of the lanthanide cations, the cations’ Lewis acidity, and the inductive effect they impose.
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Direct ink writing enables the layer-by-layer manufacture of ordered, porous structures whose mechanical behavior is driven by architecture and material properties. Here, we incorporate two different gas filled microsphere pore formers to evaluate the effect of shell stiffness and T g on compressive behavior and compression set in siloxane matrix printed structures. The lower T g microsphere structures exhibit substantial compression set when heated near and above T g , with full structural recovery upon reheating without constraint. By contrast, the higher T g microsphere structures exhibit reduced compression set with no recovery upon reheating. Aside from their role in tuning the mechanical behavior of direct ink write structures, polymer microspheres are good candidates for shape memory elastomers requiring structural complexity, with potential applications toward tandem shape memory polymers.
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The authors have studied the impact of epilayer strain on the deposition of InAs/GaAs on (100) and (111)B with 2° offset toward<2-1-1> surfaces. Consequences of a 7% lattice mismatch between these orientations in the form of three-dimensional growth are less apparent for (111)B with 2° offset toward<2-1-1> surfaces compared to (100). By exploring a range of molecular beam epitaxy process parameters for InAs/GaAs growth and utilizing scanning electron microscopy, atomic force microscopy, and Raman spectroscopy to evaluate the quality of these strained layers, the authors develop empirical models that describe the influence of the process conditions in regards to surface roughness with >92% accuracy. The smoothest InAs/GaAs samples demonstrated average surface roughness of 0.08 nm for 10 μm{sup 2} areas, albeit at very low deposition rates. The authors have found the most important process conditions to be substrate temperature and deposition rate, leading us to believe that controlling diffusion length may be the key to reducing defects in severely strained structures. InGaAs/AlGaAs quantum cascade laser structures were also produced on (111)B with 2° offset toward<2-1-1> to take advantage of the piezoelectric effect, and the modified laser transitions due to these effects were observed.