Chemical reaction at ferromagnet/oxide interface and its influence on anomalous Hall effect
Chemical reactions at the ferromagnet/oxide interface in [Pt/Fe]{sub 3}/MgO and [Pt/Fe]{sub 3}/SiO{sub 2} multilayers before and after annealing were investigated by X-ray photoelectron spectroscopy. The results show that Fe atoms at the Fe/MgO interface were completely oxidized in the as-grown state and significantly deoxidized after vacuum annealing. However, only some of the Fe atoms at the Fe/SiO{sub 2} interface were oxidized and rarely deoxidized after annealing. The anomalous Hall effect was modified by this interfacial chemical reaction. The saturation anomalous Hall resistance (R{sub xy}) was greatly increased in the [Pt/Fe]{sub 3}/MgO multilayers after annealing and was 350% higher than that in the as-deposited film, while R{sub xy} of the [Pt/Fe]{sub 3}/SiO{sub 2} multilayer only increased 10% after annealing.