Chen, W. L. | Engineering Papers

NASA NTRS1994

Ly(alpha) emission and absorption features in the spectra of galaxies

The combined effects of interstellar dust absorption and of scattering by hydrogen atoms may give rise to a Ly(alpha) spectral feature of negative equivalent width, as has been observed in several star-forming galaxies. By considering the transfer of Ly(alpha) line radiation and of neighboring stellar continuum radiation within a dusty galaxy, we find that dust absorption has three effects: (1) it reduces the apparent ultraviolet continuum luminosity at all wavelengths; (2) it preferentially decreases the apparent Ly(alpha) line luminosity from H II regions; and (3) it creates an 'attenuation feature' in the continuum spectrum -- centered at the Ly(alpha) rest frequency -- which occurs because the attenuation of the stellar continuum radiation increases as the Ly(alpha) rest frequency is approached, due to the effects of scattering by hydrogen atoms. For plausible values of the galactic dust content and of the disk thickness, these effects can lead to a negative net Ly(alpha) equivalent width, even for galaxies in which the unattenuated spectrum would show a strong Ly(alpha) emission line.

Chen, W. L.↗

NASA NTRS1992

Superlattice barrier varactors

SBV (Single Barrier Varactor) diodes have been proposed as alternatives to Schottky barrier diodes for harmonic multiplier applications. However, these show a higher current than expected. The excess current is due to X valley transport in the barrier. We present experimental results showing that the use of a superlattice barrier and doping spikes in the GaAs depletion regions on either side of the barrier can reduce the excess current and improve the control of the capacitance vs. voltage characteristic. The experimental results consist of data taken from two types of device structures. The first test structure was used to study the performance of AlAs/GaAs superlattice barriers. The wafer was fabricated into 90 micron diameter mesa diodes and the resulting current vs. voltage characteristics were measured. A 10 period superlattice structure with a total thickness of approximately 400 A worked well as an electron barrier. The structure had a current density of about one A/sq cm at one volt at room temperature. The capacitance variation of these structures was small because of the design of the GaAs cladding layers. The second test structure was used to study cladding layer designs. These wafers were InGaAs and InAlAs layers lattice matched to an InP substrate. The layers have n(+) doping spikes near the barrier to increase the zero bias capacitance and control the shape of the capacitance vs. voltage characteristic. These structures have a capacitance ratio of 5:1 and an abrupt change from maximum to minimum capacitance. The measurements were made at 80 K. Based on the information obtained from these two structures, we have designed a structure that combines the low current density barrier with the improved cladding layers. The capacitance and current-voltage characteristics from this structure are presented.

Raman, C.↗