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Chen, Hanghui

Publications and source records attributed to Chen, Hanghui.

16 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Interface engineering of phase separation in SrRuO 3 /SrTiO 3 hybrid superlattices

Most observed phase separation phenomena in complex oxides occur in systems with chemical dopants or structural defects, and theories have established the strong connection between phase separation and the random distribution of chemical dopants. Recent experiments on fabricated high-quality oxide superlattices also confirmed that the phase separation is suppressed in the clean systems without chemical disorders. Thus far, phase separation in strongly correlated oxides without the need of chemical dopants or structural defects has not been fully demonstrated. Here, we have built chemically ordered hybrid superlattices using prototypical SrRuO 3 and SrTiO 3 perovskite oxides. Contrary to previous understandings, we observe phase separation of two magnetic phases with different spin easy axes. We elucidate this phenomenon through first-principles calculations that the hybrid superlattices have a spontaneous structural instability, leading to a coexistence of ferromagnetic and antiferromagnetic phases. In this work, our findings provide an alternative pathway other than chemical doping to introduce phase separation in correlated oxides and imply that phase separation can exist in clean systems without the need of chemical disorders.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Engineering Magnetic Anisotropy and Emergent Multidirectional Soft Ferromagnetism in Ultrathin Freestanding LaMnO 3 Films

We report the combination of small coercive fields and weak magnetic anisotropy makes soft ferromagnetic films extremely useful for nanoscale devices that need to easily switch spin directions. However, soft ferromagnets are relatively rare, particularly in ultrathin films with thicknesses of a few nanometers or less. We have synthesized large-area, high-quality, ultrathin freestanding LaMnO 3 films on Si and found unexpected soft ferromagnetism along both the in-plane and out-of-plane directions when the film thickness was reduced to 4 nm. We argue that the vanishing magnetic anisotropy between the two directions is a consequence of two coexisting magnetic easy axes in different atomic layers of the LaMnO 3 film. Spectroscopy measurements reveal a change in Mn valence from 3+ in the film interior to approximately 2+ at the surfaces where considerable hydrogen infiltration occurs due to the water dissolving process. First-principles calculations show that protonation of LaMnO 3 decreases valence and Our the Mn switches the magnetic easy axis from in-plane to out-of-plane as the Mn valence approaches 2+ from its 3+ bulk value. Our work demonstrates that ultrathin freestanding films can exhibit functional properties that are absent in homogeneous materials, concomitant with their convenient compatibility with Si-based devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

A Generic Sacrificial Layer for Wide-Range Freestanding Oxides with Modulated Magnetic Anisotropy

Freestanding oxide nanomembranes have promising applications because of their novel electronic states and flexible crystalline structures. Several materials have been developed as sacrificial layers to exfoliate thin films from substrates via wet-etching. However, these materials face great challenges in terms of either complicated crystalline structures or corrosive solutions. Herein, a new sacrificial material, SrCoO 2.5 , is presented, which can be coherently grown with wide-range strains and crystalline orientations and is also soluble in eco-friendly solutions such as acetic acid, vinegar, and even carbonated drinks. With SrCoO 2.5 as the sacrificial layer, high-quality freestanding ferromagnetic SrRuO 3 membranes are achieved from wide-range epitaxial strains and different crystalline orientations. By investigating the evolution of the magnetic properties of these samples, it is discovered that epitaxial strain causes a distinct modification of the magnetic anisotropy of (001) pc -oriented SrRuO 3 samples, while its influence on the (110) pc and (111) pc samples is insignificant. This study not only demonstrates the freestanding SrRuO 3 as a promising material for flexible spintronic devices, but also offers a great opportunity to engineer a wide range of strained and oriented complex oxides for novel freestanding electronics using this newly developed sacrificial material.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Linear magnetoresistance with a universal energy scale in the strong-coupling superconductor Mo8Ga41 without quantum criticality

The recent discovery of a nonsaturating linear magnetoresistance in several correlated electron systems near a quantum critical point has revealed an interesting interplay between the linear magnetoresistance and the zero-field linear-in-temperature resistivity. These studies suggest a possible role of quantum criticality on the observed linear magnetoresistance. Here we report our discovery of a nonsaturating, linear magnetoresistance in Mo 8 Ga 41 , a nearly isotropic strong electron-phonon coupling superconductor with a linear-in-temperature resistivity from the transition temperature to ~ 55 K. The growth of the resistivity in field is comparable to that in temperature, provided that both quantities are measured in the energy unit. Overall, our data sets are remarkably similar to magnetoresistance data of the optimally doped La 2 - x Sr x CuO 4 , despite the clearly different crystal and electronic structures, and the apparent absence of quantum critical physics in Mo 8 Ga 41 . A new empirical scaling formula is developed, which is able to capture the key features of the low-temperature magnetoresistance data of Mo 8 Ga 41 , as well as the data of La 2 - x Sr x CuO 4 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Correlation-driven eightfold magnetic anisotropy in a two-dimensional oxide monolayer

Engineering magnetic anisotropy in two-dimensional systems has enormous scientific and technological implications. The uniaxial anisotropy universally exhibited by two-dimensional magnets has only two stable spin directions, demanding 180° spin switching between states. We demonstrate a previously unobserved eightfold anisotropy in magnetic SrRuO 3 monolayers by inducing a spin reorientation in (SrRuO 3 ) 1 /(SrTiO 3 ) N superlattices, in which the magnetic easy axis of Ru spins is transformed from uniaxial $\langle 001 \rangle$ direction ( N < 3) to eightfold $\langle 111 \rangle$ directions ( N ≥ 3). This eightfold anisotropy enables 71° and 109° spin switching in SrRuO 3 monolayers, analogous to 71° and 109° polarization switching in ferroelectric BiFeO 3 . First-principle calculations reveal that increasing the SrTiO 3 layer thickness induces an emergent correlation-driven orbital ordering, tuning spin-orbit interactions and reorienting the SrRuO 3 monolayer easy axis. Our work demonstrates that correlation effects can be exploited to substantially change spin-orbit interactions, stabilizing unprecedented properties in two-dimensional magnets and opening rich opportunities for low-power, multistate device applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Design of new Mott multiferroics via complete charge transfer: promising candidates for bulk photovoltaics

Optimal materials to induce bulk photovoltaic effects should lack inversion symmetry and have an optical gap matching the energies of visible radiation. Ferroelectric perovskite oxides such as BaTiO 3 and PbTiO 3 exhibit substantial polarization and stability, but have the disadvantage of excessively large band gaps. We use both density functional theory and dynamical mean field theory calculations to design a new class of Mott multiferroics–double perovskite oxides A 2 VFeO 6 (A = Ba, Pb, etc). While neither perovskite AVO 3 nor AFeO 3 is ferroelectric, in the double perovskite A 2 VFeO 6 a ‘complete’ charge transfer from V to Fe leads to a non-bulk-like charge configuration–an empty V-d shell and a half-filled Fe-d shell, giving rise to a polarization comparable to that of ferroelectric ATiO 3 . Different from nonmagnetic ATiO 3 , the new double perovskite oxides have an antiferromagnetic ground state and around room temperatures, are paramagnetic Mott insulators. Most importantly, the V d 0 state significantly reduces the band gap of A 2 VFeO 6 , making it smaller than that of ATiO 3 and BiFeO 3 and rendering the new multiferroics a promising candidate to induce bulk photovoltaic effects.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors

Heteroepitaxial coupling at complex oxide interfaces introduces a powerful tool for engineering the charge degree of freedom in strongly correlated materials, which can be utilized to achieve tailored functionalities that are inaccessible in the bulk form. In this work, the charge-transfer effect between two strongly correlated oxides, Sm 0.5 Nd 0.5 NiO 3 (SNNO) and La 0.67 Sr 0.33 MnO 3 (LSMO), is exploited to realize a giant enhancement of the ferroelectric field effect in a prototype Mott field-effect transistor. By switching the polarization field of a ferroelectric Pb(Zr,Ti)O 3 (PZT) gate, nonvolatile resistance modulation in the Mott transistors with single-layer SNNO and bilayer SNNO/LSMO channels is induced. For the same channel thickness, the bilayer channels exhibit up to two orders of magnitude higher resistance-switching ratio at 300 K, which is attributed to the intricate interplay between the charge screening at the PZT/SNNO interface and the charge transfer at the SNNO/LSMO interface. X-ray absorption spectroscopy and X-ray photoelectron spectroscopy studies of SNNO/LSMO heterostructures reveal about 0.1 electron per 2D unit cell transferred between the interfacial Mn and Ni layers, which is corroborated by first-principles density functional theory calculations. The study points to an effective strategy to design functional complex oxide interfaces for developing high-performance nanoelectronic and spintronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Charge transfer driven emergent phenomena in oxide heterostructures

Complex oxides exhibit many intriguing phenomena, including metal-insulator transition, ferroelectricity/multiferroicity, colossal magnetoresistance and high transition temperature superconductivity. Advances in epitaxial thin film growth techniques enable us to combine different complex oxides with atomic precision and form an oxide heterostructure. Recent theoretical and experimental work has shown that charge transfer across oxide interfaces generally occurs and leads to a great diversity of emergent interfacial properties which are not exhibited by bulk constituents. In this report, we review mechanisms and physical consequence of charge transfer across interfaces in oxide heterostructures. Both theoretical proposals and experimental measurements of various oxide heterostructures are discussed and compared. We also review the theoretical methods that are used to calculate charge transfer across oxide interfaces and discuss the success and challenges in theory. Finally, we present a summary and perspectives for future research.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Conduction at a ferroelectric interface

Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, in one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗