Engineering topics
Publications and source records attributed to Chaturvedi, Pavan.
Scalable approaches for synthesis and integration of proton selective atomically thin 2D materials with proton conducting polymers can enable next-generation proton exchange membranes with minimal crossover while retaining adequate proton conductance.
Proton conductive membrane includes a proton selective layer of 80-100% carbon with sp2 hybridization having a thickness of 0.3-100 nm, with 0-20% of hydrogen, oxygen, nitrogen and sp3 carbon; wherein the sp2 carbon is in a form of graphene-like material; the proton selective layer having a plurality of pores formed by any of 7, 8, 9 or 10 sp2 carbon cycles or a combination thereof, with the pores having an effective diameter of up to 0.6 nm; an ionomeric polymer layer on the proton selective layer. Total thickness of the proton conductive membrane is less than 50 microns. The ionomeric polymer is PFSA (perfluorinated sulfonic acid), PVP (polyvinylpyrrolidone) or PVA (poly vinyl alcohol) with iodide or bromide counterion dissolved inside. The graphene-like material is CVD graphene or reduced graphene oxide (rGO). A D to G Raman band ratio of the membrane is more than 0.1.
Abstract While hexagonal boron nitride (hBN) has been widely used as a buffer or encapsulation layer for emerging electronic devices, interest in utilizing it for large‐area chemical barrier coating has somewhat faded. A chemical vapor deposition process is reported here for the conformal growth of hBN on large surfaces of various alloys and steels, regardless of their complex shapes. In contrast to the previously reported very limited protection by hBN against corrosion and oxidation, protection of steels against 10% HCl and oxidation resistance at 850 °C in air is demonstrated. Furthermore, an order of magnitude reduction in the friction coefficient of the hBN coated steels is shown. The growth mechanism is revealed in experiments on thin metal films, where the tunable growth of single‐crystal hBN with a selected number of layers is demonstrated. The key distinction of the process is the use of N 2 gas, which gets activated exclusively on the catalyst's surface and eliminates adverse gas‐phase reactions. This rate‐limiting step allowed independent control of activated nitrogen along with boron coming from a solid source (like elemental boron). Using abundant and benign precursors, this approach can be readily adopted for large‐scale hBN synthesis in applications where cost, production volume, and process safety are essential.
Incorporating atomically thin graphene into proton exchange membranes (PEMs) via scalable and facile processes presents the potential for advancing energy conversion and storage applications while mitigating persistent issues of undesired species crossover.
Angstrom-scale pores introduced into atomically thin 2D materials offer transformative advances for proton exchange membranes in several energy applications. Here, we show that facile kinetic control of scalable chemical vapor deposition (CVD) can allow for direct formation of angstrom-scale proton-selective pores in monolayer graphene with significant hindrance to even small, hydrated ions (K + diameter ~6.6 Å) and gas molecules (H 2 kinetic diameter ~2.9 Å). We demonstrate centimeter-scale Nafion|Graphene|Nafion membranes with proton conductance ~3.3–3.8 S cm –2 (graphene ~12.7–24.6 S cm –2 ) and H + /K + selectivity ~6.2–44.2 with liquid electrolytes. The same membranes show proton conductance ~4.6–4.8 S cm –2 (graphene ~39.9–57.5 S cm –2 ) and extremely low H 2 crossover ~1.7 × 10 –1 – 2.2 × 10 –1 mA cm –2 (~0.4 V, ~25 °C) with H 2 gas feed. We rationalize our findings via a resistance-based transport model and introduce a stacking approach that leverages combinatorial effects of interdefect distance and interlayer transport to allow for Nafion|Graphene|Graphene|Nafion membranes with H + /K + selectivity ~86.1 (at 1 M) and record low H 2 crossover current density ~2.5 × 10 –2 mA cm –2 , up to ~90% lower than state-of-the-art ionomer Nafion membranes ~2.7 × 10 –1 mA cm –2 under identical conditions, while still maintaining proton conductance ~4.2 S cm –2 (graphene stack ~20.8 S cm –2 ) comparable to that for Nafion of ~5.2 S cm –2 . Furthermore, our experimental insights enable functional atomically thin high flux proton exchange membranes with minimal crossover.
Proton conductive membrane includes a proton selective layer of 80-100% carbon with sp2 hybridization having a thickness of 0.3-100 nm, with 0-20% of hydrogen, oxygen, nitrogen and sp3 carbon; wherein the sp2 carbon is in a form of graphene-like material; the proton selective layer having a plurality of pores formed by any of 7, 8, 9 or 10 sp2 carbon cycles or a combination thereof, with the pores having an effective diameter of up to 0.6 nm; an ionomeric polymer layer on the proton selective layer. Total thickness of the proton conductive membrane is less than 50 microns. The ionomeric polymer is PFSA (perfluorinated sulfonic acid), PVP (polyvinylpyrrolidone) or PVA (poly vinyl alcohol) with iodide or bromide counterion dissolved inside. The graphene-like material is CVD graphene or reduced graphene oxide (rGO). A D to G Raman band ratio of the membrane is more than 0.1.
Selective proton (H + ) permeation through the atomically thin lattice of graphene and other 2D materials offers new opportunities for energy conversion/storage and novel separations. Practical applications necessitate scalable synthesis via approaches such as chemical vapor deposition (CVD) that inevitably introduce sub-nanometer defects, grain boundaries and wrinkles, and understanding their influence on H + transport and selectivity for large-area membranes is imperative but remains elusive. Using electrically driven transport of H + and potassium ions (K + ) we probe the influence of intrinsic sub-nanometer defects in monolayer CVD graphene across length-scales for the first time. At the micron scale, the areal H + conductance of CVD graphene (~4.5-6 mS cm -2 ) is comparable to that of mechanically exfoliated graphene indicating similarly high crystalline quality within a domain, albeit with K + transport (~1.7 mS cm -2 ). However, centimeter-scale Nafion|graphene|Nafion devices with several graphene domains show areal H + conductance of ~339 mS cm -2 and K + conductance of ~23.8 mS cm -2 (graphene conductance for H + is ~1735 mS cm -2 and for K + it is ~47.6 mS cm -2 ). Using a mathematical-transport-model and Nafion filled polycarbonate track etched supports, we systematically deconstruct the observed orders of magnitude increase in H + conductance for centimeter-scale CVD graphene. The mitigation of defects (>1.6 nm), wrinkles and tears via interfacial polymerization results in a conductance of ~1848 mS cm -2 for H + and ~75.3 mS cm -2 for K + (H + /K + selectivity of ~24.5) via intrinsic sub-nanometer proton selective defects in CVD graphene. We demonstrate atomically thin membranes with significantly higher ionic selectivity than state-of-the-art proton exchange membranes while maintaining comparable H + conductance. Our work provides a new framework to assess H + conductance and selectivity of large-area 2D membranes and highlights the role of intrinsic sub-nanometer proton selective defects for practical applications.
The team of Oak Ridge National Laboratory, New Mexico State University, and General Graphene Corporation staff will develop and commercialize paradigm-shifting low-cost, high-performing, proton-conductive membranes made from abundant and durable 2D materials. Proposed membranes are expected to be an order of magnitude better in performance and cost compared with the current state-of-the-art formulation, Nafion, and thus are expected to eliminate huge roadblocks in proliferation of fuel cells and flow batteries. The major goal for this work is to develop a fundamentally new learning curve for novel proton exchange membranes needed for various applications. The new technology will overcome the shortcomings of the current state-of-the-art membranes that are based upon Nafion polymer by offering higher proton conductivities, the ability to operate at much lower external humidity levels and higher temperatures (>120°C), and negligible fuel and oxidant crossover through the membrane.
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