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Chattopadhyay, G.

Publications and source records attributed to Chattopadhyay, G..

At least 19 records

Demonstration of a 1-D Submillimeter-Wave Phased Array with MEMS Phase Shifters

At submillimeter-wave frequencies, due to the nonavailability of low-loss phase shifters, electronic antenna beam scanning is difficult to realize. Traditionally, power-hungry and bulky motors are used to mechanically scan the antenna beam. At lower-frequencies, phased array antennas are most commonly used where low-loss phase shifters are used with the array elements to accomplish beam steering. However, development of similar phased array antennas at submillimeter-waves has been challenging. Recently, we have developed a low-loss microelectromechanical systems (MEMS) based phased shifter in the 500-750 GHz band. In this work, we present a submillimeter-wave phased array antenna system with a cavity-backed double slot antenna architecture using the MEMS-based phase shifters. To demonstrate the concept, we developed two arrays: first one is a 8×1 linear antenna array with a fixed waveguide feeding network that achieved ±20◦ beam scanning, 18 dB directivity, and less than 1 dB scan loss over the design frequency of 500–570 GHz. The second one is a 4 × 1 linear antenna array with integrated MEMS-based phase shifters on each array element, achieving 15 dB directivity and capable of dynamic beam scanning over a range of ±9 ◦ . All the plots presented are simulated results since the parts are currently being fabricated. We hope to have access to our assembly and measurement facilities over the next few months and present measured performances at the conference.

Chattopadhyay, G.↗

Compact Submillimeter-Wave Receivers Made with Semiconductor Nano-Fabrication Technologies

Advanced semiconductor nanofabrication techniques are utilized to design, fabricate and demonstrate a super-compact, low-mass (<10 grams) submillimeter-wave heterodyne front-end. RF elements such as waveguides and channels are fabricated in a silicon wafer substrate using deep-reactive ion etching (DRIE). Etched patterns with sidewalls angles controlled with 1 deg precision are reported, while maintaining a surface roughness of better than 20 nm rms for the etched structures. This approach is being developed to build compact 2-D imaging arrays in the THz frequency range.

Silicon micromachining↗

THz multiplier circuits

Planar Schottky diode technology has been utilized to fabricate high-power broad-band monolithic multiplier circuits that can produce appreciable power well into the THz range. The chip fabrication technology that has been developed allows for robust circuit designs that can be easily packaged in conventional waveguide blocks. An overview of the capability of GaAs based Schottky diode multipliers will be presented.

Maestrini, A.↗

1400-1900 GHz local oscillators for the Herschel Space Observatory

JPL continues to develop robust planar, all solid-state sources to cover the 1414 to 1908 GHz band. These sources will be used as local oscillators to drive hot electron bolometer (HEB) heterodyne mixers on the Herschel Space Observatory to observe high resolution spectra in the interstellar medium. We report our current progress and present recent results.

Schottky diode frequency multiplier THz local osci↗

THz frequency multiplier chains base on planar Schottky diodes

The Herschel Space Observatory (HSO), an ESA cornerstone mission with NASA contribution, will enable a comprehensive study of the galactic as well as the extra galactic universe. At the heart of this exploration are ultra sensitive coherent detectors that can allow for high-resolution spectroscopy. Successful operation of these receivers is predicated on providing a sufficiently powerful local oscillator (LO) source. Historically, a versatile space qualified LO source for frequencies beyond 500 GHz has been difficult if not impossible. This paper will focus on the effort under way to develop, build, characterize and qualify a LO chain to 1200 GHz (Band 5 on HSO) that is based on planar GaAs diodes mounted in waveguide circuits. State-of-the-art performance has been obtained from a three-stage ( x2 x 2 x 3 ) multiplier chain that can provide a peak output power of 120 uW (1178 GHz) at room temperature and a peak output power of 190 uW at 1183 GHz when cooled to 113 K. Implementation of this LO source for the Heterodyne Instrument for Far Infrared (HIFI) on HSO will be discussed in detail.

oscillator spectroscopy↗

Design Considerations for Heavily-Doped Cryogenic Schottky Diode Varactor Multipliers

Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.

Schlecht, E.↗