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Chang, K. T.

Publications and source records attributed to Chang, K. T..

Development of an Additively Manufactured Capacitive Humidity Sensor for the International Space Station

The ability to measure humidity on the International Space Station and other long-duration spaceflight missions is a crucial part of the onboard systems. For example, the Environmental Control and Life Support System (ECLSS) needs to know the amount of humidity in the air to make decisions about whether it should spend power to run the dehumidifier systems to attempt to reclaim that water. Other issues can arise if the humidity reaches too high of levels and condensation builds up on electrical components. With that in mind, it is vital that the spacecraft keeps spare sensors on board or has the ability to manufacture new sensors on demand. An additively manufactured sensor would be additionally beneficial because it would save space onboard that would normally be taken up by spares, save money from costly resupply missions, and allow the sensor to be constantly updated with the most effective design. This Technical Memorandum outlines a development process carried out to design, manufacture, and test an additively manufactured humidity sensor.

Chang, K. T.

Molecular-beam epitaxy of CrSi2 on Si(111)

The growth of CrSi2 on Si(111) in a commercial MBE system with a base pressure in the low 10 to the -11th torr range is reported. CrSi2 layers grown on Si(111) exhibit a strong tendency to form islands. Two particular epitaxial relationships are identified. Thick (210 nm) layers have been grown by four different techniques, with best results obtained by codepositing Cr and Si at elevated temperature. The grain size is observed to increase with substrate temperature, reaching 1-2 microns in a layer deposited at 825 C.

Fathauer, R. W.

Nucleation and growth of CrSi2 on Si(111)

The nucleation and growth of CrSi2 on Si(111) by MBE and solid-phase epitaxy (SPE), was investigated using SEM and TEM observations of 2-mm-thick layers grown under a variety of conditions, including the use of a CoSi2 buffer. During growth, the wafers were monitored in situ using reflection high-energy electron diffraction. Island growth was observed, with islands found to nucleate with three epitaxial orientations. The morphology of CrSi2 islands was found to be affected by the degree and direction of substrate misorientation, the growth technique, and the use of CoSi2 buffer. However, the reconstruction of the Si surface does not appear to be an important factor in controlling SPE growth.

Fathauer, R. W.