Engineering topics

Chalmers, B.

Publications and source records attributed to Chalmers, B..

3 records

NASA NTRS1987

Effects of transverse temperature field nonuniformity on stress in silicon sheet growth

Stress and strain rate distributions are calculated using finite element analysis for steady-state growth of thin silicon sheet temperature nonuniformities imposed in the transverse (sheet width) dimension. Significant reductions in residual stress are predicted to occur for the case where the sheet edge is cooled relative to its center provided plastic deformation with high creep rates is present.

Mataga, P. A.↗

NASA NTRS1984

Is There a Speed Limit?

Fundamental barriers limiting the rate of the growth of crystals suitable for processing into cost efficient effective solar cells are discussed. The physical conditions which permit the growth of sheet directly from the melt are explored to identify the factors which control the growth rate. These criteria are edge defined film fed growth, free meniscus growth and inclined interface growth with specific reference to the effects that increase of speed has on those aspects of the resulting material that bear on the quality of the solar cells made from it. Useful directions for future research are indicated.

Chalmers, B.↗

NASA NTRS1983

Asymmetric Die Grows Purer Silicon Ribbon

Concentration of carbide impurities in silicon ribbon is reduced by growing crystalline ribbon with die one wall higher than other. Height difference controls shape of meniscus at liquid/crystal interface and concentrates silicon carbide impurity near one of broad faces. Opposite face is left with above-average purity. Significantly improves efficiency of solar cells made from ribbon.

Kalejs, J. P.↗