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Chait, A.

Publications and source records attributed to Chait, A..

14 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

Data and Modeling of Dendrites Subject to A Step Change in Pressure (TDSE)

There is considerable interest in dendritic solidification because of the influence dendrites have in the determination of microstructure, and thereby in the physical properties of cast metals and alloys. Current theories and models of dendritic growth generally couple diffusion effects in the melt with the physics of the interface. Data and subsequent analysis prior of the tip growth speed and radii of thermal succinonitrile dendrites in the near-convection free, on-orbit, free-fall environment demonstrate that these theories yield predictions that are reasonably in agreement with the results of experiment. However, data and analysis for assessing the interfacial physics component of theory are not sufficiently detailed or definitive. To study fundamental aspects of dendritic interface stability, we are measuring and modeling the kinetics and morphology of dendrites as they evolve from one well-defined steady state at a pre-set supercooling, through a transient stage, to a different well-defined steady state. More specifically, we subject succinonitrile dendrites, growing under steady-state conditions, to a rapid change in pressure. This leads to a rapid change in thermal driving force from the corresponding change in both the equilibrium melting temperature due to the Clapeyron effect, and a change in the far-field temperature due to adiabatic temperature changes in the bulk liquid and solid. Subsequently, we observe transformations from a well-characterized initial state into a new steady-state. Initial data reveal that the dendrite tip velocity changes almost as fast as the pressure charges, while the tip radius changes occur more slowly, taking from 10 60 seconds depending on the size of the step change and the final supercooling. Computer modeling of this process shows both agreements and disagreements with the experimental data. In making these observations and measurements, we are gaining new understandings of interfacial dynamics and state-selection physics.

Koss, Matthew B.↗
NASA NTRS2001

The Transient Dendritic Solidification Experiment (TDSE)

Dendritic solidification is a common mode of solidification. It is also an important model problem in nonequilibrium physics and pattern formation physics. Current theories couple the transfer of latent heat with selection mechanisms at the interface. Measurements of succinonitrile (SCN) dendrites in microgravity show reasonable agreement between heat transfer predictions and experiment. However, data and analysis for assessing interfacial physics theories are less definitive. We are studying, and will present data on, transient effects in dendritic growth of SCN. We employ the Clapeyron pressure/melting temperature effect to make a rapid change in a sample's hydrostatic pressure, and thereby rapidly change the specimen's melting temperature, forcing the dendrite to select a new steady-state. These initial measurements show some surprising and non-intuitive effects.

Koss, M. B.↗
NASA NTRS1999

The Transient Dendritic Solidification Experiment (TDSE)

The study of steady-state dendritic growth has both validated many element of transport phenomena in dendritic growth, and yielded many new insights. Further development in simulation and modeling are needed, as is further understanding of the role of selection or scaling in dendritic growth. The TDSE contributes to the further study of dendritic phenomena by carefully measuring and modeling transient effects on dendritic growth. The major challenge encountered in measuring and analyzing the transient behavior of isothermal dendrites is defining precisely the initial conditions from which or to which the dendrite evolves. Our proposed pressure-mediated TDSE microgravity experiment, obviates this difficulty, because the transient occurs between two well-characterized steady-states, rather than between an ill-defined initial state and the final steady state. The major results expected are unique data on transient behavior that will extend the scientific bounds from the now well-understood thermal effects, and provide insight into interfacial dynamics where open questions remain.

Koss, M. B.↗
NASA NTRS1997

Interface Shape and Growth Rate Analysis of Se/GaAs Bulk Crystals Grown in the NASA Crystal Growth Furnace (CGF)

Selenium-doped gallium arsenide, Se/GaAs, bulk crystals have been grown on earth using NASA's crystal growth furnace (CGF) in preparation for microgravity experimentation on the USML-2 spacelab mission. Peltier cooling pulses of 50 ms duration, 2040 A magnitude, and 0.0033 Hz frequency were used to successfully demark the melt-solid interface at known times during the crystal growth process. Post-growth characterization included interface shape measurement, growth rate calculation, and growth rate transient determinations. It was found that the interface shapes were always slightly concave into the solid. The curvature of the seeding interfaces was typically 1.5 mm for the 15 mm diameter samples. This was in agreement with the predicted interface shapes and positions relative to the furnace determined using a numerical model of the sample/ampoule/cartridge assembly (SACA).

Bly, J. M.↗
NASA NTRS1993

Screening of solar cells

Because solar cells in a production batch are not identical, screening is performed to obtain similar cells for aggregation into arrays. A common technique for screening is based on a single operating point of the I-V characteristic of the cell, usually the maximum power point. As a result, inferior cell matching may occur at the actual operating points. Screening solar cells based on the entire I-V characteristic will inherently result in more similar cells in the array. An array consisting of more similar cells is likely to have better overall characteristics and more predictable performance. Solar cell screening methods and cell ranking are discussed. The concept of a mean cell is defined as a cell 'best' representing all the cells in the production batch. The screening and ranking of all cells are performed with respect to the mean cell. The comparative results of different screening methods are illustrated on a batch of 50 silicon cells of the Space Station Freedom.

Appelbaum, J.↗
NASA NTRS1992

Parameterization of solar cells

The aggregation (sorting) of the individual solar cells into an array is commonly based on a single operating point on the current-voltage (I-V) characteristic curve. An alternative approach for cell performance prediction and cell screening is provided by modeling the cell using an equivalent electrical circuit, in which the parameters involved are related to the physical phenomena in the device. These analytical models may be represented by a double exponential I-V characteristic with seven parameters, by a double exponential model with five parameters, or by a single exponential equation with four or five parameters. In this article we address issues concerning methodologies for the determination of solar cell parameters based on measured data points of the I-V characteristic, and introduce a procedure for screening of solar cells for arrays. We show that common curve fitting techniques, e.g., least squares, may produce many combinations of parameter values while maintaining a good fit between the fitted and measured I-V characteristics of the cell. Therefore, techniques relying on curve fitting criteria alone cannot be directly used for cell parameterization. We propose a consistent procedure which takes into account the entire set of parameter values for a batch of cells. This procedure is based on a definition of a mean cell representing the batch, and takes into account the relative contribution of each parameter to the overall goodness of fit. The procedure is demonstrated on a batch of 50 silicon cells for Space Station Freedom.

Appelbaum, J.↗
NASA NTRS1991

Numerical simulations of space processing - The reality, the myth, and the future

The present capabilities offered by the combination of advanced special and general purpose numerical codes and supercomputers are discussed. Emphasis is placed on unique demands placed by the space environment on the computation of realistic space experiments and recommendations for improving the scientific return on the space investment. It is concluded that numerical simulations can provide timely and relevant answers which can guide and improve future space experiments.

Chait, A.↗
NASA NTRS1990

Time development of a perturbed-spherical nucleus in a pure supercooled liquid. I - Power-law growth of morphological instabilities. II - Nonlinear development

The linear growth stage of the morphological instabilities developing at the liquid-solid interface during crystal growth from an axisymmetric spherical nucleus is analyzed. The corresponding growth rate parameters are calculated numerically, and it is shown that morphological instabilities for free growth evolve according to a power law in agreement with WKB results and contrary to an exponential law found in a quasi-stationary approximation. The time evolution of an arbitrary perturbed liquid-solid interface from a linear into the nonlinear stage is studied. The initial perturbations include the eigenfunctions for the linear problem, localized perturbations of the grain-boundary type, and a stochastic noise. It is shown that the perturbations grow and spread in a wavelike manner. The formation of a predendritic growth stage is characterized by establishment of constant values of tip radius and velocity.

Pines, V.↗
NASA NTRS1990

Convection phenomena in low-gravity processing - The GTE GaAs space experiment

A numerical model for the proposed GTE GaAs space experiment is presented. The model includes the actual ampule design and the experimentally obtained furnace thermal profiles. Results are presented based on both the traditional steady-state models and on fully time dependent simulations. It is demonstrated that the commonly presumed axisymmetric flows in numerical studies are physically accurate only when the local gravitational acceleration vector is parallel to the ampules's axis. Other gravitational orientations result in nontrivial three-dimensional flows which must be resolved using full three-dimensional models. Implications of the resulting flow and thermal fields on the growing crystal at conditions available during space processing are also discussed.

Arnold, W. A.↗
NASA NTRS1990

A numerical and experimental analysis of reactor performance and deposition rates for CVD on monofilaments

The computational fluid dynamics (CFD) code FLUENT is adopted to simulate a cylindrical upflow reactor designed for chemical vapor deposition (CVD) on monofilaments. Equilibrium temperature profiles along the fiber and quartz reactor wall are experimentally measured and used as boundary conditions in numerical simulations. Two-dimensional axisymmetric flow and temperature fields are calculated for hydrogen and argon; the effect of free convection is assessed. The gas and surface chemistry is included for predicting silicon deposition from silane. The model predictions are compared with experimentally measured silicon CVD rates. Inferences are made for optimum conditions to obtain uniformity.

Gokoglu, S. A.↗
NASA NTRS1990

Steady-state thermal-solutal convection and diffusion in a simulated float zone

Models describing the steady-state thermal diffusion in a pure system, the thermal-solutal diffusion in a binary system, and heat and momentum transverse in a pure system are presented. The geometry of the model is described by a 2D Cartesian coordinate system that is applicable for crystal sheets. The melting, solidifying, and melt/gas interfacial shapes as well as the thermal, flow, and solutal profiles are analytically evaluated as functions of the heat and ambient temperature profiles and material properties. The solution procedure involves a coupled asymptotic/numerical approach which reduces the coupled set of partial differential equations to ordinary type. The results should be applicable in situations where melt flows are not intense enough to change the thermal field in pure systems, or where the physical properties of the melt are such that the convective field is decoupled from the thermal field, the latter being established primarily by diffusion.

Young, G. W.↗
NASA NTRS1989

Steady-state thermal-solutal diffusion in a float zone

A model for a float zone in a thin vertical sheet is used to study the formation of the zone configuration for both pure and binary systems of Si and GeGa. Equations describing the steady two-dimensional diffusion of solute in the melt and diffusion of heat in the feed material and the product crystal are presented. The material properties, asymptotic solutions for the temperature and concentration profiles, and melting, solidifying, and melt/gas interfacial shapes are determined in the small aspect ratio limit.

Young, G. W.↗
NASA NTRS1989

Convection and chemistry effects in CVD: A 3-D analysis for silicon deposition

The computational fluid dynamics code FLUENT has been adopted to simulate the entire rectangular-channel-like (3-D) geometry of an experimental CVD reactor designed for Si deposition. The code incorporated the effects of both homogeneous (gas phase) and heterogeneous (surface) chemistry with finite reaction rates of important species existing in silane dissociation. The experiments were designed to elucidate the effects of gravitationally-induced buoyancy-driven convection flows on the quality of the grown Si films. This goal is accomplished by contrasting the results obtained from a carrier gas mixture of H2/Ar with the ones obtained from the same molar mixture ratio of H2/He, without any accompanying change in the chemistry. Computationally, these cases are simulated in the terrestrial gravitational field and in the absence of gravity. The numerical results compare favorably with experiments. Powerful computational tools provide invaluable insights into the complex physicochemical phenomena taking place in CVD reactors. Such information is essential for the improved design and optimization of future CVD reactors.

Gokoglu, S. A.↗