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Cao, Yu

Publications and source records attributed to Cao, Yu.

52 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Visual-Attention-Based Background Modeling for Detecting Infrequently Moving Objects

Motion is one of the most important cues to separate foreground objects from the background in a video. Using a stationary camera, it is usually assumed that the background is static, while the foreground objects are moving most of the time. However, in practice, the foreground objects may show infrequent motions, such as abandoned objects and sleeping persons. Meanwhile, the background may contain frequent local motions, such as waving trees and/or grass. Such complexities may prevent the existing background subtraction algorithms from correctly identifying the foreground objects. We propose a new approach that can detect the foreground objects with frequent and/or infrequent motions. Specifically, we use a visual-attention mechanism to infer a complete background from a subset of frames and then propagate it to the other frames for accurate background subtraction. Furthermore, we develop a feature-matching-based local motion stabilization algorithm to identify frequent local motions in the background for reducing false positives in the detected foreground. The proposed approach is fully unsupervised, without using any supervised learning for object detection and tracking. Extensive experiments on a large number of videos have demonstrated that the proposed approach outperforms the state-of-the-art motion detection and background subtraction methods in comparison.

42 ENGINEERING↗
DOE OSTI2015

Solution Processed Titanyl Phthalocyanines as Donors in Solar Cells: Photoresponse to 1000 nm

Here, we report a route to thin-film polymorphs of soluble TiOPc derivatives that exhibit similar near-IR absorptivities as vapor deposited thin-films of the parent TiOPc chromophore (phase-I and phase-II polymorphs) and demonstrate that solution-processed planar and bulk heterojunction solar cells fabricated with one of these derivatives exhibited photoactivity throughout the same near-IR wavelength range without compromising VOC. Solution-processed thin-films of soluble octakis(alkylthio)-substituted TiOPc derivatives 1–3 exhibit absorption extending to 1000 nm. When incorporated into OPV devices, the contributions from the lowest CT excitonic state (Q B band) of 1 to device performance were evident in both PHJ and BHJ architectures, indicating sufficient driving force for PIET. This contribution was improved via intimate mixing of donor and acceptor molecules in a BHJ architecture, albeit with a decrease in efficiency. IPCE of the best performing BHJ device showed a contribution from 1 exceeding that of acceptor PCBM, and extending to 1000 nm.

36 MATERIALS SCIENCE↗
DOE OSTI2015

1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance R ON,SP (5.12 mΩ · cm 2 ), a low turn-on voltage (<0.7 V) and a high reverse breakdown voltage BV (>1.9 kV), were simultaneously achieved in devices with a 25 μm anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/R ON,SP of 727 MW·cm 2 . The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

42 ENGINEERING↗
DOE OSTI2014

Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam

Native defects in GaN layers grown on Si substrates by metal organic chemical vapor deposition have been studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation for GaN layers showed that optically active vacancy-type defects were formed in the layers. Charge transition of the defects due to electron capture was found to occur when the layers were irradiated by photons with energy above 2.71 eV. The concentration of such defects increased after 600–800 °C annealing, but the defects have not been annealed out even at 1000 °C. They were identified as Ga-vacancy-type defects, such as complexes between Ga vacancies and carbon impurities, and the relationship between their charge transition and optical properties were discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Charge trapping in aligned single-walled carbon nanotube arrays induced by ionizing radiation exposure

The effects of near-interfacial trapping induced by ionizing radiation exposure of aligned single-walled carbon nanotube (SWCNT) arrays are investigated via measurements of gate hysteresis in the transfer characteristics of aligned SWCNT field-effect transistors. Gate hysteresis is attributed to charge injection (i.e., trapping) from the SWCNTs into radiation-induced traps in regions near the SWCNT/dielectric interface. Self-consistent calculations of surface-potential, carrier density, and trapped charge are used to describe hysteresis as a function of ionizing radiation exposure. Hysteresis width (h) and its dependence on gate sweep range are investigated analytically. The effects of non-uniform trap energy distributions on the relationship between hysteresis, gate sweep range, and total ionizing dose are demonstrated with simulations and verified experimentally.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Structure and permeation mechanism of a mammalian urea transporter

As an adaptation to infrequent access to water, terrestrial mammals produce urine that is hyperosmotic to plasma. To prevent osmotic diuresis by the large quantity of urea generated by protein catabolism, the kidney epithelia contain facilitative urea transporters (UTs) that allow rapid equilibration between the urinary space and the hyperosmotic interstitium. Here we report the first X-ray crystal structure of a mammalian UT, UT-B, at a resolution of 2.36 {angstrom}. UT-B is a homotrimer and each protomer contains a urea conduction pore with a narrow selectivity filter. Structural analyses and molecular dynamics simulations showed that the selectivity filter has two urea binding sites separated by an approximately 5.0 kcal/mol energy barrier. Functional studies showed that the rate of urea conduction in UT-B is increased by hypoosmotic stress, and that the site of osmoregulation coincides with the location of the energy barrier.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2012

Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors

The effects of proton irradiation energy on dc and rf characteristics of InAlN/GaN high electron mobility transistors (HEMTs) were investigated. A fixed proton dose of 51015 cm2 with 5, 10, and 15 MeV irradiation energies was used in this study. For the dc characteristics, degradation was observed for sheet resistance, transfer resistance, contact resistivity, saturation drain current, maximum transconductance, reverse-bias gate leakage current, and sub-threshold drain leakage current for all the irradiated HEMTs; however, the degree of the degradation was decreased as the irradiation energy increased. Similar trends were obtained for the rf performance of the devices, with 10% degradation of the unity gain cut-off frequency (fT) and maximum oscillation frequency ( fmax) for the HEMTs irradiated with 15 MeV protons but 30% for 5 MeV proton irradiation. The carrier removal rate was in the range 0.66 1.24 cm1 over the range of proton energies investigated

36 MATERIALS SCIENCE↗
DOE OSTI2012

The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors

We have investigated the effect of proton irradiation on reliability of InAlN/GaN high electron mobility transistors (HEMTs). Devices were subjected to 5-15 MeV proton irradiations with a fixed dose of 5 1015 cm-2, or to a different doses of 2 1011, 5 1013 or 2 1015 cm-2 of protons at a fixed energy of 5 MeV. During off-state electrical stressing, the typical critical voltage for un-irradiated devices was 45 to 55 V. By sharp contrast, no critical voltage was detected for proton irradiated HEMTs up to 100 V, which was instrument-limited. After electrical stressing, no degradation was observed for the drain or gate current-voltage characteristics of the proton-irradiated HEMTs. However, the drain current decreased ~12%, and the reverse bias gate leakage current increased more than two orders of magnitude for un-irradiated HEMTs as a result of electrical stressing.

Liu, L.↗
DOE OSTI2012

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L.↗
DOE OSTI2011

Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization

The critical voltage for degradation of AlGaN/GaN high electronmobility transistors (HEMTs) employed with the Pt/Ti/Au gatemetallization instead of the commonly used Ni/Au wassignificantly increased during the off-state stress. The typicalcritical voltage for HEMTs with Ni/Au gate metallization wasaround -60V. By sharp contrast, no critical voltage was observedfor the HEMTs with Pt/Ti/Au gate metallization, even up to -100V,which was the instrumental limitation in this experiment. BothSchottky forward and reverse gate characteristics of the Ni/Audegraded once the gate voltage passed the critical voltage ofaround -60V. There was no degradation exhibited for the HEMTswith Pt-gated HEMTs.

99 GENERAL AND MISCELLANEOUS↗
NASA NTRS1997

The High-Resolution IRAS Galaxy Atlas

An atlas of the Galactic plane (-4.7 deg is less than b is less than 4.7 deg), along with the molecular clouds in Orion, rho Oph, and Taurus-Auriga, has been produced at 60 and 100 microns from IRAS data. The atlas consists of resolution-enhanced co-added images with 1 min - 2 min resolution and co-added images at the native IRAS resolution. The IRAS Galaxy Atlas, together with the Dominion Radio Astrophysical Observatory H(sub I) line/21 cm continuum and FCRAO CO (1-0) Galactic plane surveys, which both have similar (approx. 1 min) resolution to the IRAS atlas, provides a powerful tool for studying the interstellar medium, star formation, and large-scale structure in our Galaxy. This paper documents the production and characteristics of the atlas.

Cao, Yu↗
NASA NTRS1997

The Contribution of Ionizing Stars to the Far-Infrared and Radio Emission in the Galaxy

This is the first report of a new contract. However, this project represents ongoing work, so there are completed tasks as well as newly started tasks to report. The project involves the completion of the IRAS Galaxy Atlas (IGA), a large image database produced using data from the Infrared Astronomical Satellite (IRAS). In this phase, the project switches from the production and characterization of the IGA to its use in astronomical research studies of massive star formation. The research utilizes the IGA as well as two other large data sets being produced by research partners.

Cao, Yu↗
NASA NTRS1996

Parallelization and Algorithmic Enhancements of High Resolution IRAS Image Construction

The Infrared Astronomical Satellite caried out a nearly complete survey of the infrared sky, and the survey data are important for the study of many astrophysical phenomena. However, many data sets at other wavelengths have higher resolutions than that of the co-added IRAS maps, and high resolution IRAS images are strongly desired both for their own information content and their usefulness in correlation. The HIRES program was developed by the Infrared Processing and Analysis Center (IPAC) to produce high resolution (approx. 1') images from IRAS data using the Maximum Correlation Method (MCM). We describe the port of HIRES to the Intel Paragon, a massively parallel supercomputer, other software developments for mass production of HIRES images, and the IRAS Galaxy Atlas, a project to map the Galactic plane at 60 and 100(micro)m.

Satellite infrared IRAS IRAS maps IRAS images↗