Engineering topics

Cao, Hui

Publications and source records attributed to Cao, Hui.

5 records

DOE OSTI2024

On the Topotactic Phase Transition Achieving Superconducting Infinite‐Layer Nickelates

Abstract Topotactic reduction is critical to a wealth of phase transitions of current interest, including synthesis of the superconducting nickelate Nd 0.8 Sr 0.2 NiO 2 , reduced from the initial Nd 0.8 Sr 0.2 NiO 3 /SrTiO 3 heterostructure. Due to the highly sensitive and often damaging nature of the topotactic reduction, however, only a handful of research groups have been able to reproduce the superconductivity results. A series of in situ synchrotron‐based investigations reveal that this is due to the necessary formation of an initial, ultrathin layer at the Nd 0.8 Sr 0.2 NiO 3 surface that helps to mediate the introduction of hydrogen into the film such that apical oxygens are first removed from the Nd 0.8 Sr 0.2 NiO 3 / SrTiO 3 (001) interface and delivered into the reducing environment. This allows the square‐planar / perovskite interface to stabilize and propagate from the bottom to the top of the film without the formation of interphase defects. Importantly, neither geometric rotations in the square planar structure nor significant incorporation of hydrogen within the films is detected, obviating its need for superconductivity. These findings unveil the structural basis underlying the transformation pathway and provide important guidance on achieving the superconducting phase in reduced nickelate systems.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Redox gating-induced modulation of charge carrier density and lattice expansion in LaNiO 3 thin films

Redox gating involves the use of reversible redox functionalities combined with ionic electrolytes to substantially alter the charge carrier density in functional condensed materials. This modification leads to the emergence of physical properties not observed in the original material. Here, in our study, we focus on redox gating applied to a LaNiO 3 (001) film within a field-effect device and identify a critical gate voltage of 0.7 V. Hall measurements indicate that redox gating markedly increases the charge carrier density in LaNiO 3 , reaching over 10 14 cm −2 . This increase is primarily due to the injection of electrons into LaNiO 3 , which offsets the existing hole carriers. These adjustments in the carrier concentration result in reversible lattice expansion in LaNiO 3 when gate voltages are below 0.7 V. This expansion correlates well with theoretical models that consider adjustments to the Ni–O bond length, influenced by oxygen ligand holes. Conversely, at gate voltages above 0.7 V, there are significant changes in resistivity, lattice structure, and Ni valence, stemming from the formation of oxygen vacancies in the LaNiO 3 film.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Redox Gating for Colossal Carrier Modulation and Unique Phase Control

Redox gating, a novel approach distinct from conventional electrolyte gating, combines reversible redox functionalities with common ionic electrolyte moieties to engineer charge transport, enabling power-efficient electronic phase control. This study achieves a colossal sheet carrier density modulation beyond 10 16 cm -2 , sustainable over thousands of cycles, all within the sub-volt regime for functional oxide thin films. The key advantage of this method lies in the controlled injection of a large quantity of carriers from the electrolyte into the channel material without the deleterious effects associated with traditional electrolyte gating processes such as the production of ionic defects or intercalated species. The redox gating approach offers a simple and practical means of decoupling electrical and structural phase transitions, enabling the isostructural metal-insulator transition and improved device endurance. The versatility of redox gating extends across multiple materials, irrespective of their crystallinity, crystallographic orientation, or carrier type (n- or p-type). This inclusivity encompasses functional heterostructures and low-dimensional quantum materials composed of sustainable elements, highlighting the broad applicability and potential of the technique in electronic devices.

36 MATERIALS SCIENCE↗

DOE OSTI2023

The Dynamics of Oxygen Ion Exchange in Epitaxial Strontium Cobaltite Bilayers

Abstract The exchange of ions across interfaces is key to the field of iontronics, where the properties of the device can be altered by the local ion concentration. This study investigates a complex oxide system where structural and electronic phase transitions can be driven by changes in the concentration of oxygen ions. In situ coherent X‐ray studies are conducted on epitaxial bilayers of insulating SrCoO 2.5 and metallic SrCoO 3 − δ . The diffusion of oxygen ions across the bilayer is studied with X‐ray photon correlation spectroscopy to capture the dynamical behavior of the interface in reducing and oxidizing environments. The behavior is strongly asymmetric, with much slower dynamics appearing in reducing versus oxidizing environments. According to the correlation functions determined from different points in reciprocal space, this study finds that the dynamics near the center of the SrCoO 2.5 crystal are generally similar to those near the heterointerfaces. The results suggest that the interface is stable and reversible, making SrCoO x a model system for the study of iontronic behavior.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS1996

Modification of Einstein A Coefficient in Dissipative Gas Medium

Spontaneous radiation in dissipative gas medium such as plasmas is investigated by Langevin equations and the modified Weisskopf-Wigner approximation. Since the refractive index of gas medium is expected to be nearly unity, we shall first neglect the medium polarization effect. We show that absorption in plasmas may in certain case modify the Einstein A coefficient significantly and cause a pit in the A coefficient-density curves for relatively low temperature plasmas and also a pit in the A coefficient-temperature curves. In the next, the effect of medium polarization is taken into account in addition. To our surprise, its effect in certain case is quite significant. The dispersive curves show different behaviors in different region of parameters.

Cao, Chang-Qi↗