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Campola, Michael

Publications and source records attributed to Campola, Michael.

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2020

SEE Test and Data Analysis for Complex FPGA Systems

Critical space applications require knowledge of single event upset (SEU) susceptibility (mission survivability). Generic SEU test and analysis techniques do not provide adequate data for survivability analysis. This presentation provides information on how to: (1) Investigate (test for) SEU susceptibilities of tactical (mission specific) designs that are implemented in a SRAM-based FPGA; and (2) Analyze SEU cross-sections for use in survivability prediction.

Berg, Melanie↗
NASA NTRS2020

Single-Event Testing of the Texas Instruments SNV54LVC00AW Quadruple 2-Input Positive-NAND Gates

The purpose of this testing was to characterize the Texas Instruments SNV54LVC00AW for single-event latchup (SEL) in support of a NASA GSFC flight program. The SNV54LVC00A quadruple 2-input positive-NAND gate. These devices were tested at the Berkeley Accelerator Space Effects (BASE) Facility at Lawrence Berkeley National Laboratory (LBNL) where they were irradiated with the 10 MeV/amu heavy ion cocktail.

Campola, Michael↗
NASA NTRS2019

OMH3075 Hall Effect Sensor Total Ionizing Dose Test Report

The purpose of this test was to characterize the OMH3075 Hall Effects sensor degradation for total dose response. The device samples were exposed to low dose irradiations using gamma radiation. Device parameters such as magnetic operating points, leakage currents, supply currents, and rise and fall times were investigated.

Forney, James↗
NASA NTRS2019

Microsemi RTG4 Rev C Field Programmable Gate Array Single Event Effects (SEE) Heavy-Ion Test Report

The goal of this study was to perform an independent investigation of single event destructive and transient susceptibility of the Microsemi RTG4 device. The devices under test were the Microsemi RTG4 field programmable gate array (FPGA) Rev C. The devices under test will be referenced as the DUT or RTG4 Rev C throughout this document. The DUT was configured to have various test structures that are geared to measure specific potential susceptibilities of the device. DesignDevice susceptibility was determined by monitoring the DUT for Single Event Transient (SET) and Single Event Upset (SEU) induced faults by exposing the DUT to a heavy ion beam. Potential Single Event Latch-up (SEL) was checked throughout heavy-ion testing by monitoring device current.

Field Programmable Gate Array (FPGA)↗
NASA NTRS2019

Evaluation of System Reliability and Heavy Ion Angular Effects

Microsemi (Microchip) RTG4 embedded triple modular redundant (TMR) phase-locked-loop (PLL) SEU data is presented. SEU data analysis includes: 1) Evaluation of heavy-ion beam angular effects (rectangular parallel pipe (RPP) or no RPP), 2) Importance of finding linear energy transfer (LET) onset (L0), 3) Comparison of prediction rate techniques.

Space radiation environments↗
NASA NTRS2018

FPGA Mitigation Strategies for Critical Applications

This presentation on Field Programmable Gate Array (FPGA) Devices will include challenges for critical applications and space radiation environments, Single Event Upsets (SEUs) and FPGA configuration, Single Event Upsets (SEUs) and FPGA data paths, and fail-safe strategies for critical applications.

Space radiation environments↗
NASA NTRS2018

Commercial Off-The-Shelf GPU Qualification for Space Applications

With increased sensor data rates, and limited downlink capability, NASA missions have increased demands for onboard processing for applications ranging from synthetic aperture radar (SAR) data reduction to hyperspectral image processing and recognition, and even artificial intelligence (AI). Graphics Processor Units (GPUs) offer an attractive processing architecture for many of the applications due to their massive parallelism. As no radiation hardened GPU devices currently exist, any near term GPU-based onboard processors must use commercially available devices. To address this need NASA GSFC is collaborating with Cubic Aerospace Incorporated to, (a) characterize the capability of GPUs to meet the demands of a candidate onboard processing application, thereby demonstrating their ability to improve mission performance, reduce spacecraft SWaP, and potentially enable new missions, and (b) evaluate the radiation tolerance of capable COTS GPU devices to determine their suitability for spaceflight applications and understand any mitigations that are needed. A candidate onboard processing image has been prototyped and evaluated on a commercial GPU board and has demonstrated significantly increased processing throughput. Radiation tests for commercial GPU devices are planned for early fiscal year 2019.

Onboard processing↗
NASA NTRS2018

Standardizing GPU Radiation Test Approaches

While some Graphical Processing Units (GPUs) are discrete components (i.e.GTX1050), others take the form of an IP block or embedded engine within a System on Chip (SoC) device such as the Qualcomm Snapdragon"TM" 820 which contains a Qualcomm Adreno"TM" 530 GPU. Within this device are various functional blocks which can be exercised with software payloads. NVidia's Jetson"TM" TX1 SoC is provided on a System on Module (SOM). Within it are Central Processing Unit (CPU) cores and an nVidia GPU which can be accessed similarly to a discrete GPU coprocessor. While the packaging is different, each one of these GPUs needs to be tested using the same standardized code.

Single Event Effects (SEE)↗
NASA NTRS2018

Xilinx Kintex-UltraScale Field Programmable Gate Array Single Event Effects (SEE) Heavy-Ion Test Report

This is an independent investigation that evaluates the single event destructive and transient susceptibility of the Xilinx Kintex-UltraScale device. Design/Device susceptibility is determined by monitoring the device under test (DUT) for Single Event Transient (SET) and Single Event Upset (SEU) induced faults by exposing the DUT to a heavy ion beam. Potential Single Event Latch-up (SEL) is monitored throughout heavy-ion testing by examining device current. This device does not have embedded mitigation. Hence, user implemented mitigation is investigated using Synopsys mitigation tools.

Single Event Transient (SET)↗
NASA NTRS2017

Analyzing System on A Chip Single Event Upset Responses using Single Event Upset Data, Classical Reliability Models, and Space Environment Data

We are investigating the application of classical reliability performance metrics combined with standard single event upset (SEU) analysis data. We expect to relate SEU behavior to system performance requirements. Our proposed methodology will provide better prediction of SEU responses in harsh radiation environments with confidence metrics. single event upset (SEU), single event effect (SEE), field programmable gate array devises (FPGAs)

single event effect (SEE)↗
NASA NTRS2017

Single Event Effect Testing of the Micron MT46V128M8

The Micron MT46V128M8 was tested for single event effects (SEE) at the Texas AM University Cyclotron Facility (TAMU) in June of 2017. Testing revealed a sensitivity to device hang-ups classified as single event functional interrupts (SEFI) and possible soft data errors classified as single event upsets (SEU).

Single Event Functional Interrupts (SEFI)↗
NASA NTRS2017

LM193 Dual Differential Comparator Total Ionizing Dose Test Report

The purpose of this test was to characterize the flight lot of Texas Instruments' LM193 (flight part number is 5962-9452601Q2A) for total dose response. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) was determined.

enhanced low dose rate sensitivity (ELDRS↗
NASA NTRS2017

AD620SQ/883B Total Ionizing Dose Radiation Lot Acceptance Report for RESTORE-LEO

A Radiation Lot Acceptance Test was performed on the AD620SQ/883B, Lot 1708D, in accordance with MIL-STD-883, Method 1019, Condition D. Using a Co-60 source 4 biased parts and 4 unbiased parts were irradiated at 10 mrad/s (0.036 krad/hr) in intervals of approximately 1 krad from 3-10 krads, and ones of 5 krads from 10-25 krads, where it was annealed while unbiased at 25 degrees Celsius, for 2 days, and then, subsequently, annealed while biased at 25 degrees celsius, for another 7 days.

Bipolar↗