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Caillat, Thierry

Publications and source records attributed to Caillat, Thierry.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

High Efficiency Thermoelectric Radioisotope Power Systems

The work performed and whose results presented in this report is a joint effort between the University of New Mexico s Institute for Space and Nuclear Power Studies (ISNPS) and the Jet Propulsion Laboratory (JPL), California Institute of Technology. In addition to the development, design, and fabrication of skutterudites and skutterudites-based segmented unicouples this effort included conducting performance tests of these unicouples for hundreds of hours to verify theoretical predictions of the conversion efficiency. The performance predictions of these unicouples are obtained using 1-D and 3-D models developed for that purpose and for estimating the actual performance and side heat losses in the tests conducted at ISNPS. In addition to the performance tests, the development of the 1-D and 3-D models and the development of Advanced Radioisotope Power systems for Beginning-Of-Life (BOM) power of 108 We are carried out at ISNPS. The materials synthesis and fabrication of the unicouples are carried out at JPL. The research conducted at ISNPS is documented in chapters 2-5 and that conducted at JP, in documented in chapter 5. An important consideration in the design and optimization of segmented thermoelectric unicouples (STUs) is determining the relative lengths, cross-section areas, and the interfacial temperatures of the segments of the different materials in the n- and p-legs. These variables are determined using a genetic algorithm (GA) in conjunction with one-dimensional analytical model of STUs that is developed in chapter 2. Results indicated that when optimized for maximum conversion efficiency, the interfacial temperatures between various segments in a STU are close to those at the intersections of the Figure-Of-Merit (FOM), ZT, curves of the thermoelectric materials of the adjacent segments. When optimizing the STUs for maximum electrical power density, however, the interfacial temperatures are different from those at the intersections of the ZT curves, but close to those at the intersections the characteristic power, CP, curves of the thermoelectric materials of the adjacent segments (CP = T(sup 2)Zk and has a unit of W/m). Results also showed that the number of the segments in the n- and p-legs of the STUs optimized for maximum power density are generally fewer than when the same unicouples are optimized for maximum efficiency. These results are obtained using the 1-D optimization model of STUs that is detailed in chapter 2. A three-dimensional model of STUs is developed and incorporated into the ANSYS commercial software (chapter 3). The governing equations are solved, subject to the prescribed

El-Genk, Mohamed↗
NASA NTRS2004

Disordered Zinc in Zn4Sb3 with Phonon-Glass and Electron-Crystal Thermoelectric Properties

By converting waste heat into electricity, thermoelectric generators could be an important part of the solution to today's energy challenges. The compound Zn4Sb3 is one of the most efficient thermoelectric materials known. Its high efficiency results from an extraordinarily low thermal conductivity in conjunction with the electronic structure of a heavily doped semiconductor. Previous structural studies have been unable to explain this unusual combination of properties. Here, we show through a comprehensive structural analysis using single-crystal X-ray and powder-synchrotron-radiation diffraction methods, that both the electronic and thermal properties of Zn4Sb3 can be understood in terms of unique structural features that have been previously overlooked. The identification of Sb3- ions and Sb-2(4-) dimers reveals that Zn4Sb3 is a valence semiconductor with the ideal stoichiometry Zn13Sb10. In addition, the structure contains significant disorder, with zinc atoms distributed over multiple positions. The discovery of glass-like interstitial sites uncovers a highly effective mechanism for reducing thermal conductivity. Thus Zn4Sb3 is in many ways an ideal 'phonon glass, electron crystal' thermoelectric material.

phases↗
NASA NTRS2004

Hand-Held Color Meters Based on Interference Filters

Small, inexpensive, hand-held optoelectronic color-measuring devices based on metal-film/dielectric-film interference filters are undergoing development. These color meters could be suitable for use in a variety of applications in which there are requirements to quantify or match colors for aesthetic purposes but there is no need for the high spectral resolution of scientific-grade spectrometers. Such applications typically occur in the paint, printing, and cosmetic industries, for example. The figure schematically depicts a color meter of this type being used to measure the color of a sample in terms of the spectrum of light reflected from the sample. Light from a white source (for example, a white light-emitting diode) passes through a collimating lens to the sample. Another lens collects some of the light reflected from the sample and focuses the light onto the input end of optical fiber. Light emerging from the output end of the optical fiber illuminates an array of photodetectors covered with metal/dielectric-film interference filters like those described in Metal/Dielectric-film Interference Color Filters (NPO-20217), NASA Tech Briefs, Vol. 23, No. 2 (February 1999), page 70. Typically, these are wide-band-pass filters, as shown at the bottom of the figure. The photodetector array need not be of any particular design: it could be something as simple as an assembly containing several photodiodes or something as elaborate as an active-pixel sensor or other imaging device. What is essential is that each of the photodetectors or each of several groups of photodetectors is covered with a metal/dielectric-film filter of a different color. In most applications, it would be desirable to have at least three different filters, each for a spectral band that contains one of the three primary additive red, green, and blue colors. In some applications, it may be necessary to have more than three different color filters in order to characterize subtle differences in color (or in the sensation of color) that cannot be characterized with sufficient precision by use of the primary colors alone.

Snyder, G. Jeffrey↗
NASA NTRS2004

Current Pulses Momentarily Enhance Thermoelectric Cooling

The rates of cooling afforded by thermoelectric (Peltier) devices can be increased for short times by applying pulses of electric current greater than the currents that yield maximum steady-state cooling. It has been proposed to utilize such momentary enhancements of cooling in applications in which diode lasers and other semiconductor devices are required to operate for times of the order of milliseconds at temperatures too low to be easily obtainable in the steady state. In a typical contemplated application, a semiconductor device would be in contact with the final (coldest) somewhat taller stage of a multistage thermoelectric cooler. Steady current would be applied to the stages to produce steady cooling. Pulsed current would then be applied, enhancing the cooling of the top stage momentarily. The principles of operation are straightforward: In a thermoelectric device, the cooling occurs only at a junction at one end of the thermoelectric legs, at a rate proportional to the applied current. However, Joule heating occurs throughout the device at a rate proportional to the current squared. Hence, in the steady state, the steady temperature difference that the device can sustain increases with current only to the point beyond which the Joule heating dominates. If a pulse of current greater than the optimum current (the current for maximum steady cooling) is applied, then the junction becomes momentarily cooled below its lowest steady temperature until thermal conduction brings the resulting pulse of Joule heat to the junction and thereby heats the junction above its lowest steady temperature. A theoretical and experimental study of such transient thermoelectric cooling followed by transient Joule heating in response to current pulses has been performed. The figure presents results from one of the experiments. The study established the essential parameters that characterize the pulse cooling effect, including the minimum temperature achieved, the maximum temperature overshoot, the time to reach minimum temperature, the time while cooled, and the time between pulses. It was found that at large pulse amplitude, the amount of pulse supercooling is about a fourth of the maximum steady-state temperature difference. For the particular thermoelectric device used in one set of the experiments, the practical optimum pulse amplitude was found to be about 3 times the optimum steady-state current. In a further experiment, a pulse cooler was integrated into a small commercial thermoelectric threestage cooler and found to provide several degrees of additional cooling for a time long enough to operate a semiconductor laser in a gas sensor.

Snyder, G. Jeffrey↗
NASA NTRS2004

Miniature Radioisotope Thermoelectric Power Cubes

Cube-shaped thermoelectric devices energized by a particles from radioactive decay of Cm-244 have been proposed as long-lived sources of power. These power cubes are intended especially for incorporation into electronic circuits that must operate in dark, extremely cold locations (e.g., polar locations or deep underwater on Earth, or in deep interplanetary space). Unlike conventional radioisotope thermoelectric generators used heretofore as central power sources in some spacecraft, the proposed power cubes would be small enough (volumes would range between 0.1 and 0.2 cm3) to play the roles of batteries that are parts of, and dedicated to, individual electronic-circuit packages. Unlike electrochemical batteries, these power cubes would perform well at low temperatures. They would also last much longer: given that the half-life of Cm-244 is 18 years, a power cube could remain adequate as a power source for years, depending on the power demand in its particular application.

Patel, Jagdish U.↗
NASA NTRS2004

Thermoelectric unicouple used for power generation

A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalizes certain aspects of the different segments. Different materials are also described.

Caillat, Thierry↗
NASA NTRS2003

Thermoelectric devices based on materials with filled skutterudite structures

A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.

Fleurial, Jean-Pierre↗
NASA NTRS2002

High performance P-type thermoelectric materials and methods of preparation

The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn.sub.4-x A.sub.x Sb.sub.3-y B.sub.y wherein 0.ltoreq.x.ltoreq.4, A is a transition metal, B is a pnicogen, and 0.ltoreq.y.ltoreq.3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn.sub.4 Sb.sub.3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

Caillat, Thierry↗
NASA NTRS2002

Microfabricated thermoelectric power-generation devices

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

Fleurial, Jean-Pierre↗
NASA NTRS2002

Thermoelectric materials with filled skutterudite structure for thermoelectric devices

A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.

Fleurial, Jean-Pierre↗
NASA NTRS2000

Thermoelectric materials with filled skutterudite structure for thermoelectric devices

A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.

Fleurial, Jean-Pierre↗
NASA NTRS2000

Micromachined Thermoelectric Sensors and Arrays and Process for Producing

Linear arrays with up to 63 micromachined thermopile infrared detectors on silicon substrates have been constructed and tested. Each detector consists of a suspended silicon nitride membrane with 11 thermocouples of sputtered Bi-Te and Bi-Sb-Te thermoelectric elements films. At room temperature and under vacuum these detectors exhibit response times of 99 ms, zero frequency D* values of 1.4 x 10(exp 9) cmHz(exp 1/2)/W and responsivity values of 1100 V/W when viewing a 1000 K blackbody source. The only measured source of noise above 20 mHz is Johnson noise from the detector resistance. These results represent the best performance reported to date for an array of thermopile detectors. The arrays are well suited for uncooled dispersive point spectrometers. In another embodiment, also with Bi-Te and Bi-Sb-Te thermoelectric materials on micromachined silicon nitride membranes, detector arrays have been produced with D* values as high as 2.2 x 10(exp 9) cm Hz(exp 1/2)/W for 83 ms response times.

Foote, Marc C.↗
NASA NTRS1997

New Thermoelectric Materials and Devices for Terrestrial Power Generators

The development of new, more efficient, materials and devices is the key to expand the range of appplications of thermoelectric generators. New potential terrestrial applications have been recently described in the literature. There exists a wide range of heat source temperatures for these applications. Recent results on novel materials have demonstrated that ZT values significantly larger that 1.0 could be obtained in the 475 to 975K temperature range. These materials are excellent candidates to be used in terrestrial thermoelectric power generators using waste heat or liquid fuels.

thermoelectric↗
NASA NTRS1996

High Figure of Merit in Ce-Filled Skutterudites

New thermoelectric materials with superior transport properties at high temperatures have been discovered. These materials are part of the large family of skutterudites, a class of compounds which have shown a good potential for thermoelectric applications [1-4].

properties high temperatures thermoelectric applic↗
NASA NTRS1996

Skutterudite Compounds For Power Semiconductor Devices

New semiconducting materials with p-type carrier mobility values much higher than state-of-art semiconductors discovered. Nine compounds, antimonides CoSb(sub3), RhSb(sub3), IrSb(sub3), arsenides CoAs(sub3), RhAs(sub3), IrAs(sub3), and phosphides CoP(sub3), RhP(sub3) and IrP(sub3), exhibit same skutterudite crystallographic structure and form solid solutions of general composition Co(1-x-y)RH(x)Ir(y)P(1-w-z)As(w)Sb(z). Materials exhibit high hole mobilities, high doping levels, and high electronic figures of merit. Some compositions show great potential for application to thermoelectric devices.

Fleurial, Jean-Pierre↗
NASA NTRS1995

Preparation and Some Properties of N-Type IrxCo1-xSB3 Solid Solutions

A number of studies have been recently devoted to the preparation and characterization of binary skutterudite materials to investigate their potential as advanced thermoelectric materials. These studies show that the potential of these binary skutterudite compounds is limited because of their relatively large thermal conductivity. In order to achieve high thermoelectric figure of merits for these materials, efforts should focus on thermal conductivity reduction. Recent results obtained on n-type CoSb3 and IrSb3 compounds have shown that n-type skutterudite materials might have a better potential for thermoelectric applications than p-type materials. The thermoelectric properties of p-type IrxCo1-xSb3 solid solutions have been recently investigated and it was shown that a substantial reduction in thermal conductivity was achieved. We prepared and measured some properties of n-type IrxCo1-xSb3 solid solutions. The samples are characterized by large Seebeck coefficient values and significantly lower thermal conductivity values than those measured on the binary compounds CoSb3 and IrSb3. A maximum ZT value of about 0.4 was obtained at a temperature of about 300(deg)C. Improvements in the figure of merit are possible in this system by optimization of the doping level.

Solid Solutions↗