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Caillat, T.

Publications and source records attributed to Caillat, T..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Progress Status of Skutterudite-Based Segmented Thermoelectric Technology Development

Young's modulus, bulk density, fracture strength, and fracture toughness of alpha silicon carbide manufactured by extrusion and by isopressing were measured at room and elevated temperature in order to determine material feasibility as augers for the Tile Overlay Repair attachment. The measured properties of extruded and isopressed materials differ significantly, with the extruded material exhibiting marked strength anisotropy and lower density. The measurements were made between July and September 2006 at Glenn Research Center (GRC), in order to obtain design data for use in structural and thermal mathematical models.

Seqmented Thermoelectric Technoloqy (STE)↗
NASA NTRS2002

Thermoelectric properties of n-type polycrystalline BixSb2-xTe3 alloys

(BixSbl-x)2Te3(.5 = x = .7) polycrystalline samples were synthesized using a combination of melting and powder metallurgy techniques. The samples were hot pressed in graphite dies and cut perpendicular and parallel to the pressing direction. Samples were examined by microprobe analysis to determine their atomic composition. The thermoelectric properties were measured at room temperature in both directions. These properties include Seebeck coefficient, thermal conductivity, electrical resistivity, and Hall effect. The thermoelectric figure-of-merit, ZT, was calculated fiom these properties.

thermoelectric power generation segmented↗
NASA NTRS2002

Thermoelectric properties of Nb3SbxTe7-x compounds

Niobium antimony telluride, Nb3Sbx,Te7-x, was synthesized and tested for thermoelectric properties in the Thermoelectrics group at the Jet Propulsion Laboratory. The forty atoms per unit cell of Nb3Sb2Te5 and its varied mixture of atoms yield acomplicated structure, suggesting that Nb3Sb2Te5 and related compounds may exhibit low thermal conductivity and hence a higher ZT value. Nb3SbxTe7-x, compounds were synthesized and subsequently analyzed for their Seebeck voltage, heat conduction, and electrical resistivity. Results indicate that Nb3Sb2Te5 is a heavily doped semiconductor whose thermoelectric properties are compromised by compensating n-type and p-type carriers. Attempts to dope in favor of either carrier by varying the Sb:Te ratio yielded samples containing secondary metallic phases that dominated the transport properties of the resulting compounds.

thermoelectric power generation segmented↗