Switching Transition Analysis and Optimization for Bidirectional CLLC Resonant DC Transformer
Not provided.
Engineering↗
Engineering topics
Burgos, Rolando
Publications and source records attributed to Burgos, Rolando.
Medium voltage planar DC bus distributed capacitor array
An inverter with a modular bus assembly is described. In various embodiments, the modular bus assembly includes a laminated motherboard and a plurality of capacitor daughtercards. The laminated motherboard can be configured to interface a plurality of phase-leg modules and a plurality of capacitor daughtercards through a plurality of terminals and connectors located on a bottom side or a top side of the laminated motherboard. The laminated motherboard includes a layer stack with a plurality of conductor layers. Each of the plurality of conductor layers is implemented with a net spacing from a neighboring plated through hole (PTH) based at least in part on differences in potential to be applied to each of the plurality of conductor layers as compared to a potential to be applied to the PTH. Embedded shield polygons can be implemented on the laminated motherboard to mitigate surface discharge at surface terminal (PTH/SMT) triple junctions.
Ravi, Lakshmi↗
Power Electronics Based Self-Monitoring and Diagnosing for Photovoltaics Systems
Self-monitoring and diagnosing technology for photovoltaic (PV) systems is a method to reduce energy production losses. The proposed technology will enable existing panel-level power optimizers and inverters in a PV system to actively perturb the system, measure its response to these small-signal perturbations, and detect any changes in the small-signal impedances. Impedance measurement will be used to identify specific faults and power degradation trends in a PV panel. This information can be used to instantly alert Operations and Maintenance (O&M) personnel of the need for corrective action, thereby reducing energy production losses earlier relative to standard PV systems.
Panchal, Jeet↗
A Single Passive Gate-Driver for Series Connected Power Devices in DC Circuit Breaker Applications
This letter proposes a novel single passive gate driver solution based on passive devices to control series-connected power semiconductor devices for dc circuit breaker (DCCB) applications. The transient suppression devices (e.g., metal oxide varistors) are utilized to achieve natural voltage balancing among the series devices, while providing the discharge path of the gate capacitor of the upper devices. Here, the proposed method is very simple, cost effective and more compact compared with conventional voltage balancing method-based DCCBs. Besides, gate voltage oscillation during the voltage recovery process is mitigated by the addition of an extra gate capacitor. Simulation and experimental results are provided to verify the effectiveness of proposed method.
24 POWER TRANSMISSION AND DISTRIBUTION↗
Interleaved multi-channel, multi-level, multi-quadrant DC-DC converters
Direct-current-to-direct-current (DC-DC) power converters that include two or more multi-quadrant, multi-level, DC-DC, switching converter subcircuits, connected in parallel at respective input and output sides, so as to provide a multi-channel, multi-quadrant, multi-level configuration, are disclosed. The DC-DC power converters further include a control circuit configured to control the switching converter subcircuits so that corresponding switching semiconductors in each of the switching converter subcircuits are switched in an interleaved manner. In some embodiments, each of the switching converter subcircuits is a three-level, neutral-point-clamped, four-quadrant DC-DC converter circuit. In other embodiments, each of the switching converter subcircuits is a three-level, neutral-point-clamped, two-quadrant DC-DC converter circuit. In any of these embodiments, a filter capacitor may be connected between across a pair of output terminals at the output sides of the switching converter subcircuits.
Du, Yu↗
A Double-side Cooled SiC MOSFET Power Module with Sintered-silver Interposers: I. Design, Simulation, Fabrication, and Performance Characterization
Planar, double-side cooled power modules are emerging in electric-drive inverters because of their low profile, better heat extraction, and lower package parasitic inductances. However, there is still concern about their reliability due to the rigid interconnection between the device chips and two substrates of the power module. In this paper, a porous interposer made of low-temperature sintered silver is introduced to reduce the thermo-mechanical stresses in the module. A double-side cooled half-bridge module consisting of two 1200 V, 149 A SiC MOSFETs was designed, fabricated, and characterized. By using the sintered-Ag instead of solid copper interposers, our simulation results showed that at a total power loss of 200 W, the thermo-mechanical stress at the most vulnerable interfaces (interposer-attach layer) was reduced by 42 % and in the SiC MOSFET by 50 % with a trade-off of only 3.6 % increase in junction temperature. The sintered-Ag interposers were readily fabricated into desired dimensions without post-machining and did not require any surface finishing for die-bonding and substrate interconnection by silver sintering. Here, the porous interposers were also deformable under a low force or pressure, which helped to accommodate chip thickness and/or substrate-to-substrate gap variations in the planar module structure, thus simplifying module fabrication. Experimental results on the electrical performance of the fabricated SiC modules validated the success of using the porous silver interposers for fabricating planar, double-side cooled power modules.
42 ENGINEERING↗
Three-phase, three-level inverters and methods for performing soft switching with phase synchronization
A three-phase, N-level inverter and method are disclosed. A circuit topology of the inverter comprises first, second and third sets of switches and first, second and third inductors. Each switch comprises at least first, second and third terminals, the first terminals being control terminals. The first terminals of the first, second and third inductors are electrically coupled to the first, second and third sets of switches, respectively. A current controller performs a control algorithm that causes it to output first, second and third sets of gating signals to the control terminals of the switches of the first, second and third sets of switches, respectively, to cause them to be placed in an on state or an off state in a particular sequence to perform zero voltage switching while maintaining synchronization of the three phases of the three-phase, N-level inverter.
24 POWER TRANSMISSION AND DISTRIBUTION↗
Modular, multi-channel, interleaved power converters
A multi-phase power converter includes two or more multi-phase, bi-directional, multi-level, switching power converter subcircuits, connected in parallel at respective AC and DC sides, so as to provide a multi-channel, bi-directional, multi-level configuration. The AC sides of the switching converter subcircuits are directly coupled to one another and to a multi-phase AC input via series interface reactors, and the DC sides of the switching converter subcircuits are directly connected to one another and to a common split-capacitor bank at each level of the multi-level outputs of the switching converter subcircuits. A control circuit is configured to selectively control one or more switching semiconductor devices in each of the switching converter subcircuits. In some embodiments, the control circuit includes a closed-loop zero-sequence controller and a zero-sequence generator configured to eliminate circulating current among the switching converter subcircuits and to balance voltages across levels of the common split-capacitor bank.
24 POWER TRANSMISSION AND DISTRIBUTION↗
Electrification Annual Progress Report (FY2019)
During fiscal year 2019 (FY 2019), the U.S. Department of Energy (DOE) Vehicle Technologies Office (VTO) funded early stage research & development (R&D) projects that address Batteries and Electrification of the U.S. transportation sector. The VTO Electrification Sub-Program is composed of Electric Drive Technologies, and Grid Integration activities. The Electric Drive Technologies group conducts R&D projects that advance electric motors and power electronics technologies. The Grid and Charging Infrastructure group conducts R&D projects that advance grid modernization and electric vehicle charging technologies. This document presents a brief overview of the Electrification Sub-Program and progress reports for its R&D projects. Each of the progress reports provide a project overview and highlights of the technical results that were accomplished in FY 2019.
25 ENERGY STORAGE↗
Comparison and Discussion on Shortcircuit Protections for Silicon-Carbide MOSFET Modules: Desaturation Versus Rogowski Switch-Current Sensor
Survivability of silicon-carbide (SiC) mosfet modules during short circuit (SC) is essential for modern power electronics systems due to large economic implications. SiC mosfet modules exhibit narrow SC withstand times and generally much lower SC robustness than silicon (Si) insulated-gate bipolar transistors (IGBTs). This puts a critical concern on their utilization, further stressing the importance of reliable protection. This article presents a comprehensive analysis and discussion on the SiC mosfet module SC protection and performance comparison between conventional desaturation detection, previously used for Si IGBT protection, and Rogowski switch-current sensor (RSCS) detection. In addition, this article presents the experimental design for soft turn-off as a reaction to the SC detection to avoid excessive overshoots during the abrupt turn-off of the SC current. To perform different types of SC with various fault inductances on different temperatures, and for the sake of fair comparison under the same conditions, a gate-driver unit for 1.2 kV SiC mosfet half-bridge modules is developed containing both detection methods. The results demonstrate that both methods are successful in protecting the module in all SC types, with superiority of the RSCS detection and concerns for desaturation detection in high-inductance and high dc-bus voltage SC events.
42 ENGINEERING↗