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Buencuerpo, Jeronimo

Publications and source records attributed to Buencuerpo, Jeronimo.

Patterned dielectric back contact design for GaAs thermophotovoltaic devices

-Patterned-dielectric back contact structures in optoelectronic devices are designed to boost the reflectance of light from the device back surface while retaining a low-resistance pathway for electrical conductance. Their reduced light absorption at near- and sub-bandgap photon energies leads to improved luminescence in light-emitting diodes, greater photon recycling, voltage, and efficiency in photovoltaic cells, and greater recuperation of unabsorbed sub-bandgap light in thermophotovoltaic (TPV) systems. However, diffraction from the patterned features can deflect incident light in propagation directions that lead to light trapping and parasitic absorption in the cell. Here, in this article, we use rigorous coupled-wave analysis (RCWA) to study three-dimensional diffractive scattering of electromagnetic waves by periodic metal point-contact gratings on 1.42-eV GaAs TPV cells, to analyze their effect on unwanted sub-bandgap absorption in order to achieve higher TPV system efficiency. Solutions of Maxwell's equations calculated using RCWA are compared to measured sub-bandgap reflectance in experimental GaAs TPV devices with varying metal point-contact diameters and spacing. Modeling and experiments indicate decreased total reflectance due to these diffractive effects for a small point contact diameter of 1 μm, and this effect is much stronger at higher contact coverage fractions.

14 SOLAR ENERGY↗

Hybrid Tandem Photovoltaics

Tandem solar cell structures are the only strategy demonstrated to surpass the detailed balance efficiency limit of high-quality single-junction solar cells. To continue to improve the efficiencies of cost-effective terrestrial solar power, hybrid tandems of dissimilar subcells are being considered by many around the world, especially designs that incorporate silicon solar cells as a bottom subcell. In this project, we studied a wide variety of tandem design possibilities including those with three-terminal (3T) and four-terminal (4T) configurations. The use of 3T and 4T designs could be useful for efficient and economical hybrid tandem designs that utilize the best available subcell materials such as emerging perovskite materials. Three-terminal configurations, in particular, have not been sufficiently studied previously. We have laid the foundational groundwork in this project for understanding the operation of 3T tandems: developing a taxonomy for naming, a methodology for measuring and interconnecting, and models for simply characterizing 3T tandems. Electrical and optical subcell coupling between the subcells was also measured and modeled. An important part of this work was the fabrication of novel example tandem structures, including 4T GaAs/Si, 3T GaInP/Si, 3T GaAs/Si, and 3T GaInP/GaAs devices. Using these high-quality tandem cells, we have been able to clearly demonstrate the achievability of high-efficiencies, and subtle physical effects such as photon recycling and luminescent coupling. We have developed and demonstrated essential building-block tools such as transparent conductive adhesives (TCA) and 3T silicon bottom cells with interdigitated back contacts (IBC) that can also be used in many other tandem designs. We have tested the reliability of these tools and devices under standardized testing and outdoor measurements. We have found 4T GaAs/Si tandems to be relatively straightforward to fabricate and robust in real-world outdoor conditions. While we have demonstrated working hybrid 3T III-V/TCA/Si IBC tandems, we experienced low yields even with our best process flows yet. Further work is still needed to improve the processing yield of these devices. We therefore also created tandem cells using an all-III-V 3T tandem process which was very robust with high yields, allowing for the creation of voltage-matched strings in many different configurations using 8 nearly identical 3T tandems. Using these robust 3T tandem examples, we were able measure and precisely characterize 3T tandem behaviors to predict their operation under changing spectrum and temperature. The optoelectronic equivalent-circuit model was shown to be very general and applicable to hybrid tandems, and encompassed the operation 3T Si IBC cells. This general model has been distributed to the public in as open-source Python-based software called PVcircuit. We have calculated the implications of these new tandem device designs on the real-world energy production and shown how the relative performance of different tandem configurations is situational and can be engineered using the tools developed here.

14 SOLAR ENERGY↗

Subcell Coupling in Tandem Solar Cells: Measurements and Modeling

Closely stacking two or more photovoltaic (PV) subcells together to form tandem solar cells inevitably results in subcell coupling that is important to understand. Here we describe how this coupling can be modeled and characterized for two-, three-, and four-terminal tandems (hereafter 2T, 3T or 4T).

2T↗

Efficient light-trapping in ultrathin GaAs solar cells using quasi-random photonic crystals

Ultrathin solar cells reduce material usage and allow the use of lower-quality materials thanks to their one order of magnitude smaller thickness than their conventional counterparts. However, efficient photonic light-trapping is required to harvest the incident light efficiently for an otherwise insufficient absorber thickness. Quasi-random photonic crystals are predicted to have high efficient light-trapping while being more robust under angle and thickness variations than simple photonic crystals. In this study, we experimentally demonstrate a light-trapping solution based on quasi-random photonic crystals fabricated by polymer blend lithography. We control the average lattice parameter by modifying the spin-coating speed. We demonstrate an ultrathin GaAs cell of 260 nm with a rear quasi-random pattern with submicron features, and a J sc = 26.4 mA/cm 2 and an efficiency of 22.35% under the global solar spectrum.

14 SOLAR ENERGY↗

Characterization of multiterminal tandem photovoltaic devices and their subcell coupling

Three-terminal (3T) and four-terminal (4T) tandem photovoltaic (PV) devices using various materials have been increasingly reported in the literature, but measurement standards are lacking. Here, multiterminal devices measured as functions of two load variables are characterized unambiguously as functions of three device voltages or currents on hexagonal plots. We demonstrate these measurement techniques using two GaInP/GaAs tandem solar cells, with a middle contact between the two subcells, as example 3T devices with both series-connected and reverse-connected subcells. Coupling mechanisms between the subcells are quantified within the context of a simple equivalent optoelectronic circuit. Electrical and optical coupling mechanisms are most clearly revealed using coupled dark measurements. These measurements are sensitive enough to observe very small luminescent coupling from the bottom subcell to the top subcell in the prototype 3T device. Quick simplified measurement techniques are also discussed within the context of the complete characterization.

14 SOLAR ENERGY↗

32.9% Efficient Tandem Solar Cell with Strain-Balanced GaInAs/GaAsP Quantum Wells: Preprint

We demonstrate single and dual junction solar cells with up to 80 strain-balanced GaInAs/GaAsP quantum wells (QWs), in order to extend the range of photon absorption. The net average stress in the quantum well layers is =12 MPa, despite coherent stresses in the individual layers that are 35-70 times greater. The GaAs-QW cell has a certified efficiency of (27.2 ± 0.2)% at one-sun; the GaInP/GaAs-QW tandem has a certified record one-sun efficiency of (32.9 ± 0.5)%. We will discuss the architecture of the devices, the physics behind the high performance, and pathways to further improvement.

GaAsP↗

Fabrication of Quasi-Random Photonic Crystals for Ultrathin Solar Cells

Quasi-random structures for light management present an intermediate ordering between a completely random rough surface and a perfect ordered photonic crystal. They are attractive for broadband applications due to their power spectral density. This makes them excellent candidates for photovoltaic applications. Here we present preliminary fabrication results creating quasi-random structures using a self-assembly approach based on polymer blends and wet etching. We are able to create patterns with average lattice constant of five to two microns. This structure is proposed to be used as a rear patterning layer for ultrathin GaAs cells for better sustainability and radiation- hard devices.

41 EE - Solar Energy Technologies Office (EE-4S)↗

32.9% Efficient Tandem Solar Cell with Strain-Balanced GaInAs/GaAsP Quantum Wells

We demonstrate single and dual junction solar cells with up to 80 strain-balanced GaInAs/GaAsP quantum wells (QWs), in order to extend the range of photon absorption. The net average stress in the quantum well layers is =12 MPa, despite coherent stresses in the individual layers that are 35-70 times greater. The GaAs-QW cell has a certified efficiency of (27.2 ± 0.2)% at one-sun; the GaInP/GaAs-QW tandem has a certified record one-sun efficiency of (32.9 ± 0.5)%. We will discuss the architecture of the devices, the physics behind the high performance, and pathways to further improvement.

III-V↗

Fabrication, Measurement, and Modeling of GaInP/GaAs Three-Terminal Cells and Strings

Three-terminal (3T) GaInP/GaAs solar cells are fabricated from inverted-grown monolithic tandems and processed with external metal contacts suitable for easy interconnection. Prototype 3T tandems both with and without tunnel junctions are demonstrated. They are characterized as a function of two independent variables in a variety of configurations, with each configuration holding one of the contacts common to two source-meter units (SMUs). Each of these different measurement configurations completely characterizes the device by transforming the results into 6 unique device parameters and plotting the total power parametrically in two dimensions. The performance is fit using a 3T optoelectronic model that includes luminescent coupling as well as important resistances. Eight of these devices are interconnected in various voltage-constrained configurations to form voltage-matched (VM) strings. Measurement and analysis of these III-V devices and strings are generally applicable to all 3T photovoltaics.

photovoltaics↗

Trapezoidal grid fingers to reduce shadowing loss and improve short circuit current

Traditional metallic contacts on solar cells can cover a substantial portion of the device area, resulting in shadowing of light that diminishes the amount of current collected. In this paper, we developed trapezoidal electron-beam evaporated Ti/Al front grid fingers on GaAs single-junction solar cells to decrease the optical shadowing and increase the photogenerated current. Here, we observe a high fill factor of 87% at 1-Sun light intensity and we observe no degradation on the open-circuit voltage. The short-circuit current density is found to increase by 0.4 mA/cm 2 when compared to previously demonstrated electroplated Ni/Au front grid fingers, resulting in an efficiency improvement of ~0.8% absolute.

14 SOLAR ENERGY↗

Homogenous Voltage-Matched Strings Using Three-Terminal Tandem Solar Cells: Fundamentals and End Losses

Strings constructed from three-terminal tandem (3TT) solar cells offer the performance benefits of voltage-matching (which reduces sensitivity to spectral variation), but without the subcell voltage isolation required by four-terminal cells. However, the circuitry for a 3TT string can become complex, making circuit analysis more challenging. Here, we illustrate the essential features of “homogenous” voltage-matched (VM) 3TT strings, for which all 3TT cells in the string are nominally identical (with the same design/doping sequence, such that they can be fabricated on the same manufacturing line). Several representative VM string configurations are explicitly considered, and used to describe the general construction of string I(V) curves. End losses intrinsic to these strings are discussed in detail, along with mitigation strategies to minimize their impact. Our analysis agrees with experimental results for eight-cell strings constructed from GaInP/GaAs 3TT devices.

14 SOLAR ENERGY↗

Optimization of four terminal rear heterojunction GaAs on Si interdigitated back contact tandem solar cells

High-efficiency, four-terminal tandem solar cells composed of thin GaAs films mechanically stacked onto interdigitated back contact silicon solar cells with a glass interlayer are demonstrated. The optimal thickness of the absorber layer of a rear heterojunction GaAs subcell for use in four terminal tandem solar cells was studied. GaAs top cells with absorber layer thicknesses of 1.5, 1.9, 2.3, 2.8, and 3.5 µm were fabricated on glass and mechanically stacked onto interdigitated back-contact Si bottom cells. All tandem cells were found to have efficiencies above 30% under the AM1.5 G spectrum demonstrating a relatively weak sensitivity to thickness in the four-terminal configuration. We found the 2.8 µm absorber layer cell to have the highest top cell and tandem cell efficiency at 26.38% and 32.57%, respectively. Optical modeling with transfer matrix method for the planar top cell and Lambertian light trapping in the textured Si subcell, along with drift-diffusion Hovel equations, were used to show photon recycling enhancement to the effective diffusion length and VOC of the top cell as a result of the low-index glass interlayer.

14 SOLAR ENERGY↗

Voltage-Matched Strings using 3-Terminal Tandems: Fundamentals and End Losses

Strings constructed from 3-terminal tandem (3TT) cells can provide some of the performance benefits of voltage-matching with less cell complexity than strings based on 4-terminal tandem cells. However, the circuitry for a 3TT string can become more complex, making circuit analysis more challenging. Here we illustrate the essential features of single-polarity voltage-matched (VM) 3TT strings using representative examples. End losses are intrinsic to this type of string, but can be reduced by minimizing m and n in the Vtop/Vbot VM ratio m/n, and further mitigated by increasing the string length. This analysis agrees with preliminary experimental results.

3TT↗

Stringing Monolithic Three Terminal III-V Tandems

Tandemdevicesarewellknowntosurpasssinglejunctions.However,thelimitationsofcurrent-matchingisaconcern for changing spectra in terrestrial applications. Three terminal tandem (3T) devices can be more robust to these variations resulting in higher energy yield than single junction devices and two terminal series-connected tandems. We fabricate one-sun 3T tandem devices made of inverted grown III-V tandem (GaInP/t/GaAs) as a prototype of 3T tandems for stringing and measurement demon- strations. We demonstrate 3T tandem measurements that can be used to understand the use of 3T tandems in various constrained configurations. We have demonstrated the improvement of unconstrained 3T tandem cells over 2T series-connected cells as the illumination changes. We present initial results for micro-module with up to 8 3T tandem devices to be strung together.

3T↗

High Efficiency Inverted GaAs and GaInP/GaAs Solar Cells With Strain-Balanced GaInAs/GaAsP Quantum Wells

High-efficiency solar cells are essential for high-density terrestrial applications, as well as space and potentially vehicle applications. The optimum bandgap for the terrestrial spectrum lies beyond the absorption range of a traditional dual junction GaInP/GaAs cell, with the bottom GaAs cell having higher bandgap energy than necessary. Lower energy bandgaps can be achieved with multiple quantum wells (QWs), but such a pathway requires advanced management of the epitaxial growth conditions in order to be useful. Strain-balanced GaAsP/GaInAs QWs are incorporated into a single junction GaAs solar cell and a dual junction GaInP/GaAs solar cell, leading to 27.2% efficiency in the single junction device and a one-sun record 32.9% efficiency in the tandem device. Good carrier collection and low non-radiative recombination are observed in the cells with up to 80 QWs. The GaAs cells employ a rear-heterojunction architecture to boost the open-circuit voltage to over 1.04 V in the quantum well device, despite the large number of QWs.

14 SOLAR ENERGY↗