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Bude, J.

Publications and source records attributed to Bude, J..

Delivering laser performance conditions to enable fusion ignition, and beyond at the National Ignition Facility

On December 5th, 2022, controlled fusion ignition was demonstrated for the first time at the National Ignition Facility (NIF), a major achievement in the field of Inertial Confinement Fusion (ICF) requiring a multi-decadal effort involving broad national and international collaborations. To drive the fusion ignition reaction with the compressed fuel capsule, that yielded 3.15 MJ of nuclear energy [1], the NIF laser delivered a high-precision pulse shape with 2.05 MJ of ultra-violet (UV) laser energy and a peak power of 440 TW. This laser energy was an increase of ~8 % compared to that delivered on the previous “threshold of ignition” record yield experiment (1.37 MJ of yield for 1.89 MJ of laser energy) on August 8th, 2021. Here we explain how the results of our extensive research in laser technology and UV optics damage mitigation led to major improvements in the NIF laser, enabling this energy increase along with additional accuracy, precision, and power balance enhancements. Furthermore, we will discuss on-going efforts that have enabled operations at 2.2 MJ of UV energy as well as potential new initiatives to push the laser performance –accuracy and delivered energy– to even higher levels in the future as previously demonstrated on a small subset of NIF beams.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY

Multi-Dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming Techniques

A density-gradient (DG) model is used to calculate quantum-mechanical corrections to classical carrier transport in MOS (Metal Oxide Semiconductor) inversion/accumulation layers. The model is compared to measured data and to a fully self-consistent coupled Schrodinger and Poisson equation (SCSP) solver. Good agreement is demonstrated for MOS capacitors with gate oxide as thin as 21 A. It is then applied to study carrier distribution in ultra short MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) with surface roughness. This work represents the first implementation of the DG formulation on multidimensional unstructured meshes. It was enabled by a powerful scripting approach which provides an easy-to-use and flexible framework for solving the fourth-order PDEs (Partial Differential Equation) of the DG model.

Rafferty, Connor S.