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Brucker, G. J.

Publications and source records attributed to Brucker, G. J..

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Radiation effects on MOS devices - dosimetry, annealing, irradiation sequence, and sources

This paper reports on some investigations of dosimetry, annealing, irradiation sequences, and radioactive sources, involved in the determination of radiation effects on MOS devices. Results show that agreement in the experimental and theoretical surface to average doses support the use of thermo-luminescent dosimeters (manganese activated calcium fluoride) in specifying the surface dose delivered to thin gate insulators of MOS devices. Annealing measurements indicate the existence of at least two energy levels,,s or a activation energies, for recovery of soft oxide MOS devices after irradiation by electrons, protons, and gammas. Damage sensitivities of MOS devices were found to be independent of combinations and sequences of radiation type or energies. Comparison of various gamma sources indicated a small dependence of damage sensitivity on the Cobalt facility, but a more significant dependence in the case of the Cesium source. These results were attributed to differences in the spectral content of the several sources.

Stassinopoulos, E. G.↗
NASA NTRS1982

The damage equivalence of electrons, protons, and gamma rays in MOS devices

The results of laboratory tests to determine the radiation damage effects induced on MOS devices from Co-60, electron, and proton radiation are reported. The tests are performed to establish the relationship between the Co-60 gamma rays and the level of damage to the MOS devices in regards to different damages which can be expected with the electron and particle bombardments experienced in space applications. CMOS devices were exposed to the Co-60 gamma rays, 1 MeV electrons, and 1 MeV protons while operating at 3, 10, and 15 V. The test data indicated that the Co-60 source was reliable for an initial evaluation of the electron damages up to 2 MeV charge. A correction factor was devised for transferring the Co-60 measurements to proton damages, independent of bias and transistor types, for any orbit or environment.

Brucker, G. J.↗
NASA NTRS1977

Prediction and measurement results of radiation damage to CMOS devices on board spacecraft

Final results from the CMOS Radiation Effects Measurement (CREM) experiment flown on Explorer 55 are presented and discussed, based on about 15 months of observations and measurements. Conclusions are given relating to long-range annealing, effects of operating temperature on semiconductor performance in space, biased and unbiased P-MOS device degradation, unbiased n-channel device performance, changes in device transconductance, and the difference in ionization efficiency between Co-60 gamma rays and 1-Mev Van de Graaff electrons. The performance of devices in a heavily shielded electronic subsystem box within the spacecraft is evaluated and compared. Environment models and computational methods and their impact on device-degradation estimates are being reviewed to determine whether they permit cost-effective design of spacecraft.

Stassinopoulos, E. G.↗
NASA NTRS1977

Prediction and measurement results of radiation damage to CMOS devices on board spacecraft

All the currently available results of the flight experiment for all the individually instrumented 130 transistors, relating to both biased and unbiased n- and p-channel RCA and -channel AMI devices were presented. The predictions of dose levels based on a detailed analysis of the space radiation environment as encountered by Explorer-55 and calculated by one dimensional slab geometry, and three dimensional spherical geometry were cited.

Stassinopoulos, E. G.↗
NASA NTRS1976

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The CMOS Radiation Effects Measurement (CREM) experiment is presently being flown on the Explorer-55, to evaluate device performance in the actual space radiation environment and to correlate the respective measurements to on-the-ground laboratory irradiation results. The experiment contains an assembly of CMOS and P-MOS devices shielded in front over 2 pi steradian by flat slabs of aluminum of 40, 80, 150, and 300 mils (1.02, 2.04, 3.81, and 7.62 mm) thicknesses, and by a practically infinite shield in the back. Initial results from the CREM experiment are reported. Predictions of radiation damage to CMOS devices are based on standard environment models and computational techniques. Measured space damage is smaller than predicted by about a factor of 2-3 for thin shields but agrees well with predictions for thicker shields. It is not clear at this time how the trapped particle environment models or the computational methods should be modified in order to achieve better agreement between experimental results and predicted damage curves.

Cliff, R. A.↗
NASA NTRS1976

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The CMOS Radiation Effects Measurement (CREM) experiment is presently being flown on the Explorer-55. The purpose of the experiment is to evaluate device performance in the actual space radiation environment and to correlate the respective measurements to on-the-ground laboratory irradiation results. The experiment contains an assembly of C-MOS and P-MOS devices shielded in front by flat slabs of aluminum and by a practically infinite shield in the back. Predictions of radiation damage to C-MOS devices are based on standard environment models and computational techniques. A comparison of the shifts in CMOS threshold potentials, that is, those measured in space to those obtained from the on-the-ground simulation experiment with Co-60, indicates that the measured space damage is smaller than predicted by about a factor of 2-3 for thin shields, but agrees well with predictions for thicker shields.

Cliff, R. A.↗
NASA NTRS1976

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The initial results obtained from the Complementary Metal Oxide Semiconductors Radiation Effects Measurement experiment are presented. Predictions of radiation damage to C-MOS devices are based on standard environment models and computational techniques. A comparison of the shifts in CMOS threshold potentials, that is, those measured in space to those obtained from the on the ground simulation experiment with Co 60, indicated that the measured space damage is greater than predicted by a factor of two for shields thicker than 100 mils (2.54 mm), but agrees well with predictions for the thinner shields.

Cliff, R. A.↗
NASA NTRS1976

Successful large-scale use of CMOS devices on spacecraft traveling through intense radiation belts

This paper describes the environmental models of the radiation belts and computational techniques which have been developed for predicting the radiation hazards for spacecraft. These data and techniques are then applied to the Atmosphere Explorer 51 spacecraft to explain its successful survival for more than 18 months in a severe environment. In particular, the results of the analysis are used to explain the performance of some 2400 CMOS devices, and consequently, they demonstrate the reliability of this device technology in spacecraft systems.

Brucker, G. J.↗
NASA NTRS1972

Radiation sensitivity of silicon imaging sensors on missions to the outer planets.

Review of the results of an investigation of the magnitude of the degradation effects of radiation on the operating characteristics of camera tubes using silicon diode arrays in the space environment, and discussion of the radiation damage mechanisms concerned. The effects produced by bombardment of bare-silicon-diode arrays or vidicon tubes with 85-kV X rays, Cobalt 60 gamma rays, 1 MeV and 11 MeV electrons, 3 MeV and 142 MeV protons, and reactor neutrons are presented. Interference effects produced by radiation bombardment during operation of television tubes are investigated, and limiting fluxes of electrons and protons are given.

Brucker, G. J.↗
NASA NTRS1971

Dependence of defect introduction on temperature and resistivity and some long-term annealing effects

The effort reported here represents data of lithium properties in bulk-silicon samples before and after irradiation for analytical information required to characterize the interactions of lithium with radiation-induced defects in silicon. A model of the damage and recovery mechanisms in irradiated-lithium-containing solar cells is developed based on making measurements of the Hall coefficient and resistivity of samples irradiated by 1-MeV electrons. Experiments on bulk samples included Hall coefficient and resistivity measurements taken as a function of: (1) bombardment temperature, (2) resistivity, (3) fluence, (4) oxygen concentration, and (5) annealing time at temperatures from 300 to 373 K.

Brucker, G. J.↗